2305 TRANSISTOR Search Results

Contextual Info: PRODUCT SUMMARY SKY77778-51 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz , Band 30 (2305–2315 MHz); LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz); AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)

2N3904

Abstract: 2N3906 MAX6654 MAX6680 MAX6680MEE MAX6681 MAX6681MEE
Contextual Info: 19-2305; Rev 0; 4/02 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 include pin-programmable default temperature thresholds for the OVERT output, which provides fail-safe clock throttling or system shutdown. In addition, the devices are pin programmable to

sky77814

Contextual Info: PRODUCT SUMMARY SKY77814-11 Power Amplifier Module for LTE FDD Band 7 2500–2570 MHz and Band 30 (2305–2315 MHz) and LTE TDD Bands 38/41 (2496–2690 MHz), Band 40 (2300–2400 MHz) and AXGP Band (2545–2575 MHz) Applications Description • Long-Term Evolution (LTE)

BU2305

Abstract: BU2305F bu2302
Contextual Info: Standard iCs CR timer BU2302/BU2302F/BU2305/BU2305F The B U 2302/F and B U 2305/F are general-purpose ICs used in timers. The tim er off tim e is based on the oscillation frequency that is determ ined by the external CR connected to the internal oscillator circuit.

MAX6681

Abstract: MAX6681MEE 2N3904 2N3906 MAX6654 MAX6680 MAX6680MEE
Contextual Info: 19-2305; Rev 1; 1/05 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The

Contextual Info: 19-2305; Rev 1; 1/05 ±1°C Fail-Safe Remote/Local Temperature Sensors with SMBus Interface The MAX6680/MAX6681 are precise, two-channel digital thermometers. Each accurately measures the temperature of its own die and one remote PN junction and reports the temperature on a 2-wire serial interface. The

5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Contextual Info: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*

2395 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2395 transistor

Contextual Info: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

2305 transistor

Contextual Info: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

stk4192

Abstract: STK4192 2 STK4192II stk4192-ii 50W power amplifier STK4101II STK4101V EN2305C power transformer ratings resistor fix value
Contextual Info: Ordering number: EN2305C Thick Film Hybrid IC STK4192II AF Power Amplifier Split Power Supply (50W + 50W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

STK4192II

Abstract: STK4101 stk4192 STK4192 2 transistor ac 149 10w power STK4192-II EN2305C
Contextual Info: Ordering number: EN2305C Thick Film Hybrid IC STK4192II AF Power Amplifier Split Power Supply (50W + 50W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4192II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

1N5497

Abstract: SDT3775 SDT3714 SDT3715 SDT3716 SDT3717 SDT3718 SDT3719 SDT3720 SDT3721
Contextual Info: 29 SILICON POWER TRANSISTORS CUF! R EfsIT GAIN SATURATIOP si V O LTA G ES @ TYPE NUMBER CASE TYPE VCBO V 5 AMP SILICON PNP VCEO V EBO I V I V O b se rve - 80 80 40 40 40 40 hFE MIN. I MAX. M egative P o la r ity 6.0 20 6.0 20 6.0 12 SDT3714 SDT3715 SDT3716

TIC 2460

Abstract: bts 2140 S11 zener diode ALM-31222 tic 2160 tic 2360 Avago MGA-30216 app note 2305 transistor BTS 3900 a BTS 3900
Contextual Info: ALM-31222 1Watt, 1.7GHz to 2.7GHz Driver Amplifier Design for Base Transceiver Station Application Application Note 5388 Introduction Avago Technologies ALM-31222 is a high linearity 1W Power Amplifier PA with good OIP3 and PAE at 1dB GainCompression point, are designed to operate from 1.7GHz

56590653B

Abstract: AN 240 Motorola 2305 transistor MRF316 Motorola MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF316 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 W atts

NTE2314

Abstract: NTE375 NPN pnp MATCHED PAIRS RF 482 NTE396 NTE397 T060 T072 T092 2-30MHZ
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain b v CEO BVEBo h pE Pd 't 31a •c 0.05 BV cbo

Contextual Info: File Number 1353 BU X11A 3 5 - / 9 - HARRIS S Efl I COND SECTOR £fc,E J> 4302271 High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor 004D725 747 « H A S TERMINAL DESIGNATIONS Features: V c e o - 190 V m ie -2 0 A • ■ Pr - 200 W JEDEC TO-204AA

transistor tl 188

Abstract: 92CS-27516
Contextual Info: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor

MRF8S23120HR3

Abstract: AN1955 C3225JB2A334KT j162 MRF8S23120H C5750X7R1H106KT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S23120H Rev. 0, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S23120HR3 MRF8S23120HSR3 Designed for LTE base station applications with frequencies from 2300 to

PIMD3

Abstract: npT1007 TRANSISTOR J15
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

TRANSISTOR J15

Abstract: PIMD3
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

transistor c 2316

Abstract: IC KA 2312 transistor t8w tm 2312 2SA1022 2SA1030 2SC2292 T10M40F1 T8M40F1 te 2304
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English