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    Panasonic Electronic Components 2SA10220CL

    TRANS PNP 20V 0.03A MINI3
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    2SA1022 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1022 Kexin Silicon PNP Epitaxial Planer Type Original PDF
    2SA1022 Panasonic TRANS GP BJT PNP 20V 0.03A 3MINI3-G1 Original PDF
    2SA1022 Panasonic PNP Transistor Original PDF
    2SA1022 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1022 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1022 TY Semiconductor Silicon PNP Epitaxial Planer Type - SOT-23 Original PDF
    2SA1022 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1022 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA1022 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1022 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1022 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1022 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1022 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1022 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1022 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1022 Panasonic Transistor Selection Guide Scan PDF
    2SA10220BL Panasonic Electronic Components Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 20V 0.03A MINI-3P Original PDF
    2SA10220CL Panasonic Electronic Components Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 20V 0.03A MINI-3P Original PDF
    2SA1022B Panasonic TRANS GP BJT PNP 20V 0.03A 3MINI3-G1 Original PDF
    2SA1022C Panasonic TRANS GP BJT PNP 20V 0.03A 3MINI3-G1 Original PDF

    2SA1022 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 0.55 Mini type package,allowing downsizing of the equipment and automatic 2 insertion through the tape packing and the magazine packing.


    Original     		PDF 2SA1022 OT-23

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 1.9±0.1 Ta=25˚C Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current


    Original     		PDF 2SA1022 2SC2295 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.


    Original     		PDF 2SC2295 2SA1022 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2SC2295 2SA1022 20ues, 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295 2SA1022 2SC2295

    2SA1022

    Abstract: XP06435 XP6435
    Text: Composite Transistors XP06435 XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP06435 XP6435) 2SA1022 2SA1022 XP06435 XP6435

    2SA1022

    Abstract: 2SC2295
    Text: Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High frequency voltage fT • Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SA1022 2SC2295 20ues, 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022 SC-59 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295 2SA1022 2SC2295

    2SA1022

    Abstract: marking eb Silicon PNP epitaxial
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SA1022 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High transition frequency fT. 0.4 3 Features 1 insertion through the tape packing and the magazine packing. 0.55 Mini type package,allowing downsizing of the equipment and automatic


    Original     		PDF 2SA1022 OT-23 2SA1022 marking eb Silicon PNP epitaxial

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC2295 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05


    Original     		PDF 2002/95/EC) 2SA1022 2SC2295 2SA1022 2SC2295

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.


    Original     		PDF 2SC2295 2SA1022 2SA1022 2SC2295

    2SA1022

    Abstract: 2SC2295 transistor to6
    Text: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage


    Original     		PDF 2SA1022 2SC2295 2SA1022 2SC2295 transistor to6

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2295 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) 2SC2295 2SA1022

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 1 0.95 +0.2 0.65±0.15 Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage


    Original     		PDF 2SA1022 2SC2295 05nductor 2SA1022 2SC2295

    2SA1022

    Abstract: XP6435
    Text: Composite Transistors XP6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification 1 6 2 5 3 4 0 to 0.1 2SA1022 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.


    Original     		PDF XP6435 2SA1022 100MHz 2SA1022 XP6435

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sa10

    Abstract: 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1012 2SA1013 2SA1015 2SA1035 2SA1016K
    Text: - 20 - m n Ta=25t , *En(àTc=25t;) m 2SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1016K 2SA1018 2SA1020 2SA1022 2SA1025 2SA1029 2SA1030 2SA1031 2SA1032 2SA1034 2SA1035 2SA1036K 2SA1037K 2SA1037KLN 2SA1038 2SA1039 2SA1040 2SA1041 2SA1042 2SA1043 2SA1044


    OCR Scan     		PDF Ta-25iC) SA1011 2SA1012 2SA1013 2SA1015 2SA1015L 2SA1016 2SA1041 2SA1042 2SA1043 2sa10 2SA1015L 2SC1815L 2sc2562 SA1011 2SA1013 2SA1015 2SA1035 2SA1016K

    2SA973

    Abstract: 2SC2263 2SC2295 2SA1022 t31i
    Text: PANASONIC INDL/ELEKiSEMI> 7SC D | 1^32054 □ OG'Usq 7 f~ T Ji -f 7 2SC2263 2SC2263 NPN jc fcf £ '> tj U > $•'> 7 \/~f l — NP N Epitaxial Planar Low Noise Amplifier ' J / Complementary Pair with 2SA973 2SA973£:a >71) ^ /F e a tu re s it eP IC E E N V ¿ ^


    OCR Scan     		PDF 2SC2263 2SC2263 2SA973t3 2SA973 2SA973 2SC2295 2SA1022 t31i