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    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960


    Original     		PDF MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202NR3

    232273461009L

    Abstract: transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9202N Rev. 0, 12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S9202NR3 Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9202N MRF8S9202NR3 232273461009L transistor mosfet J306 ATC100B2R0BT500X j327 transistor Transistor J182 232273461009 ATC100B470 ATC100B1R2BT500XT j349 AN1955

    OM-780-2

    Abstract: transistors BC 457 om780-2 mrf8s9202g
    Text: Document Number: MRF8S9202N Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S9202NR3 MRF8S9202GNR3 Designed for CDMA base station applications with frequencies from 920 to 960


    Original     		PDF MRF8S9202N MRF8S9202NR3 MRF8S9202GNR3 MRF8S9202N OM-780-2 transistors BC 457 om780-2 mrf8s9202g