2328 DIODE Search Results

d749n

Abstract: LTR-S D1069N D1809N D269N D849N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

3771

Abstract: thyristor 406 A 3198 T1059N T1589N T2159N T308N T458N T709N
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C] [A]

D1809N

Abstract: d749n D1069N D269N D849N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

T1059N

Abstract: T1589N T2159N T308N T458N T709N KD202V
Contextual Info: W1C - Schaltung ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V ~ Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C] [A]

gun sound effects generator

Abstract: CPU 1825 sunplus program rom
Contextual Info: SPF20A 63K MUSIC SYNTHESIZER GENERAL DESCRIPTION The SPF20A is a fully CMOS integrated circuit. It uses advanced design and process technology to combine an 8-bit RISC processor, a 4-channel music synthesizer, 256K-byte program ROM, 160-byte working SRAM,

snubber resistance of IGBT

Abstract: RCD snubber for igbt igbt protection circuit diagram inverters circuit diagram igbt 275120 IGBT snubber for inductive load dc motor speed control circuit diagram with IGBT snubber
Contextual Info: 11- IGBT SNUBBER CIRCUIT SSM2- Features: 1. 2. 3. 4. 5. Low snubber losses Directly reduces turn-off Voltage over-shoot No oscillations in DC bus Mount directly to heat sink Flexible pins fit for almost all IGBT modules Description: Designed for motor control, inverters, and power

Contextual Info: PACSZ1284 CALIFORNIA MICRO DEVICES P/ActiveTM IEEE 1284 ECP/EPP Termination Network Features Application • 28-pin QSOP package • Low cost Parallel Port Terminations and Filters for PCs and peripherals • 17 filtering lines in a single package • In-system ESD protection to 30kV contact discharge

PACSZ1284

Abstract: PACSZ128401Q PACSZ128402Q 2328 diode
Contextual Info: CALIFORNIA MICRO DEVICES PACSZ1284 P/ActiveTM IEEE 1284 ECP/EPP Termination Network Features Application • 28-pin QSOP package • Low cost Parallel Port Terminations and Filters for PCs and peripherals • 17 filtering lines in a single package • In-system ESD protection to 30kV contact discharge

apt100dl60b

Abstract: APT100DL60S C 2328
Contextual Info: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

1N407E

Contextual Info: Zero-TC Reference Diodes Micmsemj I Part N um ber OTC M icrosem i ; P ackage i O u tlin e Division \ Type ; Mil Spec Pow er Data S h e e t ID W Vz (V) Izt <mA) «V z (%/C) Z zt (n ) IR i V R ! Toi. (uA ) ! 0 0 ;(+/-%) 1N4069 Scottsdale DD STD 2323 2 51 7 5

2328 diode

Contextual Info: LASER COMPONENTS GmbH Hausanschrift / Home address Postanschrift / P.O. Box Werner-von-Siemens-Str. 15 Postfach 1129 D-82140 Olching D-82133 Olching Tel. 0 81 42 28 64 0 • Fax (0 81 42) 28 64 11 http://www.lasercomponents.de • E-Mail: info@lasercomponents.de

727 thyristor

Abstract: M32 diode an 7591 thyristor 4592 D849N 8906 D1069N D1809N D269N D3301N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

DIODE 615 200A

Abstract: C 2328 APT100DL60S apt100dl60b APT100DL60 induction heat resonant
Contextual Info: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

Contextual Info: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

4041

Abstract: 4026 datasheet 9759 diode D1049N D428N D4401N D798N 4026 416-1 335 7847
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom

an 7591

Abstract: M32 diode D1069N D1809N D269N D3301N D749N D849N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 560 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

Contextual Info: APT100DL60B G APT100DL60S(G) 600V 100A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr)

D1049N

Abstract: D428N D4401N D798N
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom

Contextual Info: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Contextual Info: SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient

Contextual Info: MPSA28 MPSA29* M AXIMUM RATINGS Symbol Rating C o llector-E m itter Voltage MPSA28 MPSA29 80 Collector-Base Voltage VCBO 80 Em itter-Base Voltage v EBO 12 Vdc C ollector C urrent — C ontinuous >C 500 m Adc Total Device D issipation <5 T a = 25°C Derate above 25°C

2328 diode

Contextual Info: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

F 2328

Contextual Info: SMG2328 100V, 250mΩ, 1.5A N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

TF 450

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218