239 SOIC Search Results

GaAs SPDT

Abstract: SW-239-PIN SW-239 spdt switch SW-239TR SW-239RTR SW239PIN SW239
Contextual Info: GaAs SPDT Switch DC-2.5 GHz SW-239 V 2.01 Ordering Information Model No. Package SW-239 PIN SW-239TR SW-239RTR SOIC 8 Lead Forward Tape & Reel Reverse Tape & Reel GaAs SPDT Switch SW-239 V 2.01

Contextual Info: Package Number 239 - 24-Lead SOIC |- $ - | .0 1 Q - 2 5 ( m ) I B ( M ) l IN D EX " AREA D E T A IL 1 BASE PLA N E D S E A T IN G PLAN E 12 ” A” —A1 1 uuuuuu MMMMM .0. T - | - -

AD239-12

Contextual Info: GaAs 1C 3 Bit Digital Attenuator 4 dB LSB Positive Control 0.75-2 GHz ESAlpha A D 239-12 Features SOIC-8 • Attenuation in 4 dB Steps to 28 dB with High Accuracy PIN 8 ■ Single Positive Control Voltage for Each Bit M 0.050 1.27 mm BSC 0.244 (6.20 mm)

HD6413003F16

Abstract: hd6413002f16 HD6473042F16 TL084-LM324 piezo autotransformer HD6413004F16 HD6413005F16 laptop inverter SCHEMATIC TRANSISTOR 6N138 SPICE HD6413003F-16
Contextual Info: INDEX Order Code Description Manufacturer 549-435 549-447 642-666 ZM33064C 789-239 ZSD1000D8 789-276 663-232 663-244 707-790 TD300IN 787-346 TSH10IN TSH11IN TS271CN TS274ID TS902IN TS912IN TS3V393IN TS3702ID 789-872 — 789-859 — OPT101P BUF634P 789-744

transistor 9751

Abstract: LT1424 LT1425 LT1737
Contextual Info: RELIABILITY DATA LT1424 / LT1425 / LT1737 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE SOIC/SOT/MSOP 231 9640 231 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE TYPE SAMPLE SIZE PLASTIC DIP SOIC/SOT/MSOP 249 239 488 • TEMP CYCLE FROM -65°C to +150°C

SCR POWER CONTROL

Abstract: DS1239 DS1236 DS1239-5
Contextual Info: DS1239 DALLAS ds1Chip 239 MicroManager s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • Provides necessary control for start up and shutdown of power supply from keyboard vbat [ v cco [ vcc[ • Holds microprocessor in check during power transients 16

AS239-12

Contextual Info: ES Alpha GaAs 1C SPDT Reflective Switch DC-2.5 GHz A S 239-12 Features SOIC-8 • Low Insertion Loss 0.4 dB @ 1 GHz PIN 8 ■ High Isolation (35 dB @ 1 GHz) 0.050 (1.27 mm) BSC M ■ General Purpose Switching 0.244 (6.20 mm) 0.228 (5.80 mm) PIN 1 IN D IC A TO R -

SW-239TR

Abstract: M513 SW-239
Contextual Info: GaAs SPDT Switch DC - 2.5 GHz SW-239 V6 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed

SW-239TR

Abstract: SW239/7
Contextual Info: GaAs SPDT Switch DC - 2.5 GHz SW-239 V4 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 50 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed

Contextual Info: GaAs SPDT Switch, DC - 2.5 GHz SW-239 V3 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 50 mW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed

SW-239TR

Abstract: SW SPDT M513 SW-239
Contextual Info: SW-239 GaAs SPDT Switch DC - 2.5 GHz Rev. V6 Features • • • • • • • • Functional Schematic Very Low Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed

sw239

Contextual Info: Afazcm w a n A M P com pany GaAs SPDT Switch DC-2.5 GHz SW-239 SO-8 Features • Very Low Power Consumption: 50 nW • Low Insertion Loss: 0.5 dB • High Isolation: 25 dB up to 2 GHz • Very High Intercept Point: 46 dBm IP 3 • Nanosecond Switching Speed

M513

Abstract: SW-239 SW-239TR
Contextual Info: SW-239 GaAs SPDT Switch DC - 2.5 GHz Rev. V4 Features •      Functional Schematic Very Low DC Power Consumption: 100 µW Low Insertion Loss: 0.5 dB High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP3 Nanosecond Switching Speed

Contextual Info: A fe GaAs SPDT Switch DC-2.5 GHz SW-239 SO-8 Features • Very Low Power Consumption: 50 pW • Low Insertion Loss: 0.5 dB • High Isolation: 25 dB up to 2 GHz • Very High Intercept Point: 46 dBm IP3 • Nanosecond Switching Speed 3 m 0 0 i i- Q l0 ( ° 2 5 ) ® i B <

RF-IF High Frequency

Abstract: high frequency mixer rf mixer 200-250 mhz RF Mixer for 200-250 MHz JESD22-A114 J-STD-020B MH203 MH203-PCB
Contextual Info: MH203 The Communications Edge TM High Linearity Cellular-Band MMIC Mixer Product Features • • • • • • • +32 dBm IIP3 RF 800 – 960 MHz IF 200 – 350 MHz High-side LO configuration +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required

JESD22-A114

Abstract: J-STD-020B MH203 MH203-PCB
Contextual Info: MH203 High Linearity Cellular-Band MMIC Mixer Product Features • • • • • • • • +32 dBm IIP3 RF 800 – 960 MHz IF 200 – 350 MHz ISO & EPC compliant High-side LO configuration +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required

LTC6101

Abstract: R503
Contextual Info: RELIABILITY DATA LTC6101 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE NEWEST DATE CODE SOIC/SOT/MSOP 77 0502 77 • PRESSURE COOKER TEST AT 15 PSIG, +121°C PACKAGE TYPE SAMPLE SIZE SOIC/SOT/MSOP 188 188 • TEMP CYCLE FROM -65°C to +150°C

25804

Contextual Info: RELIABILITY MONITOR DS1000Z-25 OCT '00 MONITOR DEVICE REVISION DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 150x1.4 OSEP 0033 PROCESS Single Poly, Single Metal DE009456ACE 8 SOIC 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7 β: 1

DALLAS DS80C320

Abstract: 25863
Contextual Info: RELIABILITY MONITOR DS1232L JAN '00 Monitor DEVICE REVISION DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1232 C2-L 150 9948 PROCESS Single Poly, Single Metal DK933191AAJ 8 SOIC ATP Anam, PI 0.8 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7

25821

Abstract: dallas date code ds12887 25854
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 MAR '00 25224 9950 OSEP DE940040AAC SOIC 50 50 DS1869 A3 JUN '00 25547 0017 CPS ChipPac, China DH833210AAB SOIC

16880

Abstract: P16905
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Jan-96 9544 A1 ANAM, K. DN518301AAN 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : 85°C/85% RH, 168 hours HTC Vapor Phase, 3 Passes

JSTD-020

Abstract: DM035 26438
Contextual Info: RELIABILITY MONITOR DS1232L JAN '01 MONITOR REVISION DATE CD LOT NUMBER PINS PACKAGE 0051 DK038265AAC 8 C2-L SOIC PROCESS Single Poly, Single Metal 0.8 µm Standard Process DEVICE DS1232 WIDTH ASSEMBLY SITE 150x1.4 ATP Anam, PI JOB NO DESCRIPT Cf: 60% Ea: 0.7

Contextual Info: SPDT Reflective Switch ITT239AB FEATURES • • • • • • • SOIC-8 package High Isolation 34 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “239” reflective switches

ITT239AB

Abstract: DC-10 High Isolation Reflective SPDT Switch
Contextual Info: SPDT Reflective Switch ITT239AB FEATURES • • • • • • • SOIC-8 package High Isolation 34 dB @ 1 GHz Usable to 4 GHz Low DC Power Consumption Positive Control when “floated” with capacitors Pin-for-pin compatible with standard “239” reflective switches