23FL33T4 Search Results

Contextual Info: TIP47, TIP48, TIP49, TIP50 TIP47, 48,49, 50 NPN PLASTIC POWER TRANSISTORS Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 14.42 9,63 3,56 16.51 10.67 4.83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31.24

CBR1545CT

Contextual Info: CBR1545CT Dual 4L Dual Centre Tap Schottky Barrier Rectifier Suited for SMPS and High Frequency E)C to DC Converters ABSOLUTE MAXIMUM RATINGS Parameters Symbol Average Rectified Forward Current duty cycle = 0.5; T c = 135 °C Per Diode Per Device . If(AV)

MJE170

Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Contextual Info: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R

v23033

Abstract: a06 transistor TRANSISTOR A06 marking A06 MARKING J1A CMBTA05 CMBTA06
Contextual Info: CMBTA05 CMBTA06 CDIL SILICON EPITAXIAL TRANSISTORS N -P -N transistor P A C K A G E O U T L IN E D ETAILS A L L D IM EN SIO N S IN m m M arking CMBTA05 = 1H CMBTA06 = 1G _3.0 2.8 0.14 0.09 0.48 0.38 3 2.6 Pin configuration 2 .4 BASE EMITTER 3 = COLLECTOR _K02

CSB834

Abstract: CSD880 A1442
Contextual Info: CSB834 CSB834 PNP PLASTIC POWER TRANSISTOR Complementary CSD880 Low frequency Power Amplifier Applications DIM A C D E F G H J K L M N ' MIN 14.42 9.63 3.56 MAX 16.51 10.67 4.83 0.90 1,15 1.40 3,75 3.66 2,29 2.79 2,54 3.43 0,56 12.70 14,73 6,35 2,03 2.92 31.24

2SA10150

Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8

BCG36

Abstract: bc557 SALJ TO-92-4pin BC327-10 to-92-4
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

CSA1012

Abstract: CSC2562 ic 356 transistor CSA1012
Contextual Info: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: L TIP41, TIP41A, TIP41B, TIP41C TIP42, TIP42A, TIP42B, TIP42C TIP 41, 41 A, 41 B, 41C TIP 4 2 ,42A, 42B, 42C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN

BD168

Contextual Info: CDIL BD166, BD168, BD170 BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BD165, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP.

Contextual Info: BSR20 BSR20A SILICON P-N -P HIGH-VOLTAGE TRANSISTORS P-N -P high-voltage small-signal transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BSR20 = T35 BSR20A = T36 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

Contextual Info: TO-220 MIN MAX A B 14.42 9,63 C D E F G H J 3,56 16,51 10.67 4,83 0,90 1,40 3,88 2,79 K L M N 12,70 DIM =r uf D^ U g - 1,15 3,75 2,29 2,54 - 2,03 7 3,43 0,56 14,73 6,35 2,92 31,24 DEG TO-220 Power Package Transistors NPN Maximum Ratings Type No. (V) Min

BD168

Abstract: transistor bd170 BD165 BD166 BD170
Contextual Info: BD166, BD168, BD170 CDÎL BDI66,168,170 PNP PLASTIC POWER TRANSISTORS Complementary BDI 65, 167,169 Aucjio Amplifier and Driver Circuit Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A B 7.4 7.8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E

RD10EB2

Abstract: RD10EB RD10EB1 RD10EB3 RD5V6EB
Contextual Info: DO-35 Zener Diodes 500 mW E le c tric a l C h a ra c te ris tic s (A t Ta=25°C, U n le ss O th e rw ise S p e cifie d ) Type No. min RD3V3EB V ZT rZT Temp. Coeff. at lZT 3t lZT of nom (V) max max (Ohm) (mA) 1 Zener Voltage typ (%/°C) •n a t V v r Ta

35hm

Abstract: CMBT2222 CMBT2222A
Contextual Info: CDU CMBT2222 CMBT2222A SILICON PLANAR EPITAXIAL TRANSISTORS N—P -N silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Marking CMBT2222 = IB CMBT2222A = IP 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

B0176

Abstract: 80178 l206 transistor npn transistors,pnp transistors BD175 BD176 BD177 BD178 BD179 BD180
Contextual Info: CDU BD175, BD177, BD179 BD176, BD178, BD180 BD I75,177,179 BD176,178,180 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM “V i> J- i_ ÜJ E U­

Contextual Info: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: CMBT2222 CMBT2222A CDÎL SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking CMBT2222 = IB CMBT2222A = IP PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

CIL612

Abstract: CIL622 CIL532 CIL-531 CIL601 CIL602 CIL611 CIL613 2N4141 CIL631
Contextual Info: TO-106 EPOXY PACKAGE TRANSISTORS NPN Type V CBO No. V CEO V EBO !c b o VCB « hFE (V) (V) (V) (MA) (V) Min Min Min Max Min Max CIL631 140 120 5.0 0.10 100 20 CIL621 100 100 5.0 0.50 80 40 CIL622 100 100 5.0 0.50 80 CIL611 80 80 5.0 0.50 CIL612 80 80 5.0

IC marking jw

Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Contextual Info: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

BD115

Abstract: TO-92-4pin
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 OOQOOflb =13^ ■ CDIL TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. hFE VCEO V EBO •cBO VCB (V) Min (V) Min (V) Min (MA) Max (V) 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 VCBO lc (mA)