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    23N10 Search Results

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    23N10 Price and Stock

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    Infineon Technologies AG BSC123N10LSGATMA1

    MOSFET N-CH 100V 10.6/71A 8TDSON
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    DigiKey () BSC123N10LSGATMA1 Digi-Reel 10,019
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    BSC123N10LSGATMA1 Cut Tape 10,019 1
    • 1 $2.20
    • 10 $1.41
    • 100 $0.96
    • 1000 $0.70
    • 10000 $0.65
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    BSC123N10LSGATMA1 Reel 5,000 5,000
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    Avnet Americas BSC123N10LSGATMA1 Reel 111 Weeks 5,000
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    • 10000 $0.53
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    Rochester Electronics BSC123N10LSGATMA1 15,311 1
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    Vyrian BSC123N10LSGATMA1 11,626
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    Win Source Electronics BSC123N10LSGATMA1 50,000
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    • 100 $1.72
    • 1000 $1.43
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    Infineon Technologies AG IPT023N10NM5LF2ATMA1

    IPT023N10NM5LF2ATMA1
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    DigiKey () IPT023N10NM5LF2ATMA1 Digi-Reel 1,842 1
    • 1 $4.95
    • 10 $3.28
    • 100 $2.34
    • 1000 $2.21
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    IPT023N10NM5LF2ATMA1 Cut Tape 1,842 1
    • 1 $4.95
    • 10 $3.28
    • 100 $2.34
    • 1000 $2.21
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    Avnet Americas IPT023N10NM5LF2ATMA1 Reel 2,000 18 Weeks 2,000
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    Mouser Electronics IPT023N10NM5LF2ATMA1 1,930
    • 1 $5.48
    • 10 $4.26
    • 100 $3.32
    • 1000 $2.96
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    Newark IPT023N10NM5LF2ATMA1 Cut Tape 1,990 1
    • 1 $5.10
    • 10 $3.43
    • 100 $2.49
    • 1000 $2.36
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    Goford Semiconductor GT023N10TL

    MOSFET N-CH 100V 330A TOLL-8
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    DigiKey () GT023N10TL Cut Tape 1,770 1
    • 1 $4.62
    • 10 $3.05
    • 100 $2.17
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    GT023N10TL Digi-Reel 1,770 1
    • 1 $4.62
    • 10 $3.05
    • 100 $2.17
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    Infineon Technologies AG IPB123N10N3GATMA1

    MOSFET N-CH 100V 58A D2PAK
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    DigiKey () IPB123N10N3GATMA1 Digi-Reel 1,624 1
    • 1 $1.92
    • 10 $1.32
    • 100 $0.93
    • 1000 $0.77
    • 10000 $0.77
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    IPB123N10N3GATMA1 Cut Tape 1,624 1
    • 1 $1.92
    • 10 $1.32
    • 100 $0.93
    • 1000 $0.77
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    IPB123N10N3GATMA1 Reel 1,000 1,000
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    • 1000 $0.69
    • 10000 $0.61
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    Avnet Americas IPB123N10N3GATMA1 Reel 16 Weeks 1,000
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    • 1000 $0.54
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    Mouser Electronics IPB123N10N3GATMA1 2,579
    • 1 $1.88
    • 10 $1.29
    • 100 $0.91
    • 1000 $0.69
    • 10000 $0.61
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    Rochester Electronics IPB123N10N3GATMA1 750 1
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    • 100 $0.82
    • 1000 $0.68
    • 10000 $0.61
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    TME IPB123N10N3GATMA1 1
    • 1 $1.86
    • 10 $1.45
    • 100 $1.20
    • 1000 $1.03
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    Rutronik IPB123N10N3GATMA1 Reel 5,000 1,000
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    • 10000 $0.60
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    Chip One Stop IPB123N10N3GATMA1 Cut Tape 1,960 0 Weeks, 1 Days 1
    • 1 $1.68
    • 10 $1.21
    • 100 $0.91
    • 1000 $0.77
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    EBV Elektronik IPB123N10N3GATMA1 1,000 17 Weeks 1,000
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    New Advantage Corporation IPB123N10N3GATMA1 1,000 1
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    • 1000 $1.11
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    Goford Semiconductor GT023N10M

    N100V,140A,RD<2.7M@10V,VTH2.7V~4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT023N10M Reel 800 800
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    Find more 23N10 price and stock on Findchips.com

    23N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    24N100

    Abstract: 23N10 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    24N100

    Abstract: "SOT-227 B" dimensions 125OC
    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC "SOT-227 B" dimensions 125OC PDF

    24N100

    Abstract: 23N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 227TM PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS Symbol Test Conditions Maximum Ratings TJ = 25∞C to 150∞C TJ = 25∞C to 150∞C, RGS = 1MΩ VGS VGSM Continuous Transient ID25 TC = 25°C 24N100 23N100 24N100 23N100 1000 1000 V V ±20 ±30 V V A A A A A IDM T C = 25°C;


    Original     		24N100 23N100 24N100 23N100 OT-227 E153432 125oC PDF

    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die 0.39 Ω 0.43 Ω Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 24N100: PDF

    24N100

    Abstract: 23N10 IXFN24N100
    Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		24N100 23N100 24N100 23N100 227TM IXFN24N100 23N10 PDF