23OHM Search Results

EPC25

Abstract: lcd monitor schematic
Contextual Info: TURNS RATIO: MECHANICAL DIMENSIONS: mm PRI1:PRI2:SEC=1:1:130 ELECTRICAL CHARACTERISTICS: at 25 ° C 1)INDUCTANCE: @1KHz,1V L(5-8): 4uH± 15% L(6-9): 4uH± 15% A 26.5 MAX 10 5 2)DC RESISTANCE: DCR(5-8): 14mohm MAX DCR(6-9): 14mohm MAX DCR(2-10): 23ohm MAX

igbt 400V 20A

Abstract: IRG4PH30KD IRGPH30MD2
Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

CPV363M4U

Contextual Info: Previous Datasheet Index Next Data Sheet PD -5039 CPV363M4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

Contextual Info: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95786 IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency

IRF1010

Contextual Info: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

035H

Abstract: IRFPE30
Contextual Info: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: Noise Suppression Products/EMI Suppression Filters > Ferrite Cores for EMI Suppression > Multi-hole Cores Data Sheet 1 Ferrite Cores for EMI Suppression Multi-hole Cores FSMA Series • Appearance ■ Dim. illustration E B H A FSMA Type for Balun Transfomer

IRG4PC30S

Contextual Info: PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

CPV363

Abstract: PEC 5039 CPV363M4U
Contextual Info: PD -5039 CPV363M4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

3 phase dc control ir2130

Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
Contextual Info: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス

IRG4IBC30S

Contextual Info: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95170 IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC30S-S

Contextual Info: PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tight parameter distribution and high efficiency

IRG4IBC30S

Contextual Info: PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

BAV99Z

Abstract: SW DIP-3 schematic diagram scart to vga 74F04 AN-06 AN27 AN-45 CCIR656 CH7012 an4525
Contextual Info: AN-45 Application Notes CHRONTEL PCB Layout and Design Considerations for CH7012 TV Output Device Introduction This application note focuses on the basic PCB layout and design guidelines for the CH7012 TV Output Device. Guidelines in component placement, power supply decoupling, grounding, and reference crystal placement and

TRANSISTOR marking ar code 3432

Contextual Info: PD - 95637 IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95170A IRG4BC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 94922 IRG4PC30SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: Bulletin I27315 02/07 CPV363M4UPbF UltraFast IGBT IGBT SIP MODULE 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

CPV363M4K

Contextual Info: PD-5.043A CPV363M4K Short Circuit Rated UltraFast IGBT IGBT SIP MODULE Features 1 • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Fully isolated printed circuit board mount package

i810

Abstract: vga to rca schematic M2701 P4.7KGCT-ND schematic diagram vga to rca schematic diagram vga to scart 74F04 AN-06 AN27 CCIR656
Contextual Info: AN-34 Application Notes CHRONTEL PCB Layout and Design Considerations for CH7009 DVI/TV Output Device Introduction This application note focuses on the basic PCB layout and design guidelines for the CH7009 DVI/TV Output Device. Guidelines in component placement, power supply decoupling, grounding, and reference crystal placement

Contextual Info: PD -5039 CPV363M4U PRELIMINARY IGBT SIP MODULE UltraFast IGBT 1 Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz