2429 EQUIVALENT Search Results

GS10265RA

Abstract: 0xA804 G2000 CIRCUIT DESIGN FOR A CAPACITIVE MEMS GYROSCOPE D1111
Contextual Info: ±14,000°/sec Digital Gyroscope Sensor ADIS16266 Data Sheet FEATURES GENERAL DESCRIPTION Yaw rate gyroscope with range scaling ±3500°/sec, ±7000°/sec, and ±14,000°/sec settings 2429 SPS sample rate Wide sensor bandwidth: 360 Hz No external configuration required to start data collection

Contextual Info: ±14,000°/sec Digital Gyroscope Sensor ADIS16266 Data Sheet FEATURES GENERAL DESCRIPTION Yaw rate gyroscope with range scaling ±3500°/sec, ±7000°/sec, and ±14,000°/sec settings 2429 SPS sample rate Wide sensor bandwidth: 360 Hz No external configuration required to start data collection

Contextual Info: LSR Low ESR Surface Mount Tantalum Capacitors nemco Low ESR FEATURES Lead-free, RoHS compliant Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies High ripple and surge current capability Meets or exceeds EIA 535 BAAC and IECQ standards (QC300801/US0001, IS - 28)

LSR220

Abstract: 16D 213 B H 35Z diode LSR680 datasheet 346 766 J-STD-020B LSR1000 4B 817
Contextual Info: LSR Low ESR Surface Mount Tantalum Capacitors nemco Low ESR FEATURES z Lead-free, RoHS compliant z Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies z High ripple and surge current capability z Meets or exceeds EIA 535 BAAC and IECQ standards (QC300801/US0001, IS - 28)

marking 6H

Abstract: LSR22/35HK300
Contextual Info: LSR Low ESR Surface Mount Tantalum Capacitors nemco Low ESR FEATURES z Lead-free, RoHS compliant z Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies z High ripple and surge current capability z Meets or exceeds EIA 535 BAAC and IECQ standards (QC300801/US0001, IS - 28)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2521 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2521 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power 2.9±0.1 management A 0.65 applications of portable equipments.

33608

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33608 ACCEPTS DEVICE LEAD WIDTHS 1.9, 2.0, 2.8, To Max 3.8 MM SINGLE-IN-LINE SIP PINS ON .100 in. CENTERS EXAMPLE DEVICES (J) MAX DEVICE WIDTH (I)

A3760

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2550 DUAL P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2550 is dual P-channel MOSFETs designed for power 2.9±0.1 management applications of portable equipments, such as load A 0.65

PA256

Abstract: A4883
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2560 Dual N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2560 is Dual N-channel MOSFETs designed for Back light inverters and power management applications of portable equipments.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2520 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2520 is N-channel MOS Field Effect Transistor 2.9±0.1 designed for DC/DC converter and power management A 0.65 applications of portable equipments.

LS460

Contextual Info: LS460 National Semiconductor DM54LS460/DM74LS460 10-Bit Comparator General Description Features/Benefits The 'LS460 is a 10-bit comparator with true and comple­ ment comparison status outputs. The device compares two 10-bit data strings A g -A o and Bg - B 0 to establish if this

Contextual Info: LS460 JlA National Semiconductor DM54LS460/DM74LS460 10-Bit Comparator General Description Features/Benefits The 'LS460 is a 10-bit comparator with true and comple­ ment comparison status outputs. The device compares two 10-bit data strings Ag-Ao and Bg-B o to establish if this

1768I

Abstract: EVAL-ADF7020-1-DBX 13109 ADF7020-1 ZA 1411 4803I AN-859 5558 416-1 335 9011I
Contextual Info: AN-859 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com RF Port Impedance Data, Matching, and External Component Selection for the ADF7020-1 by Conor O'Mahony

DM54LS460J

Abstract: DM74LS460J DM74LS460N J24F LS460 N24C A988 a5 gnd
Contextual Info: LS460 E H National Ææ Semiconductor DM54LS460/DM74LS460 10-Bit Comparator General Description Features/Benefits The 'LS460 is a 10-bit comparator with true and comple­ ment comparison status outputs. The device compares two 10-bit data strings A g -A o and Bg - Bo to establish if this

upa2593

Contextual Info: Preliminary Data Sheet PA2593 R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

xtal 11.0592

Abstract: ADF7021-N xtal 11.0592 datasheet EVAL-ADF702XDBZx ADF7021 EVAL-ADF7021-NDBZx 138 4307 407 ZA 1411 EVAL-ADF7021DB 06301
Contextual Info: AN-859 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com RF Port Impedance Data, Matching, and External Component Selection for the ADF7020-1, ADF7021, and ADF7021-N

Contextual Info: Preliminary Data Sheet PA2593 R07DS0012EJ0200 Rev.2.00 Sep 10, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments.

Contextual Info: C00413 COMPONENT SPECIFICATION ROUND PIN I.C. SOCKETS OCTOBER 2012 CONTENTS: SECTION TITLE PAGE 1 Description of Connector and Intended Application 2 2 Marking of Connector and/or Package 2 3 Rating 3 Appendix 1 Gauges 4 Appendix 2 Contact insertion depth

MRF652S

Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA M R F652 M R F652S The RF Line NPN S ilico n RF P o w er T ran sisto rs . . . designed for 12.5 Vdc U H F large-signal, amplifier applications in industrial and commercial F M equipment operating to 512 MHz. 5.0 W, 512 MHz

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA2590

Abstract: PA2590T1H-T2-AT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2590 N- AND P-CHANNEL MOSFET FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2590 is N- and P-channel MOSFETs designed for 2.9±0.1 DC/DC converters and power management applications of A 0.65 portable equipments.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid