242B Search Results

Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, 242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN 14.42

Hitachi DSA001653

Contextual Info: HRW2502A L Silicon Schottky Barrier Diode for Rectifying ADE-208-242B (Z) Rev. 2 Jan. 1996 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB. Ordering Information

class c tuned amplifier

Abstract: tp 220 n ScansU9X23 1000 W CLASS D AUDIO AMPLIFIER
Contextual Info: Western Electric 242B Vacuum Tube Classification—Filamentary air-cooled triode M ay be used as an audio-frequency amplifier or as a radio-frequency amplifier, m odulator or oscillator. Dimensions — Dimension and outline diagrams are shown in Figures 1 and 2. T he overall

Contextual Info: HRW2502A L Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-242B (Z) Rev. 2 Jan. 1996 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Same power as T 0-220A B . • Small outline compared with TO-220AB.

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5D56 Microcontroller D ATA SHE E T D S -LM3S 5D 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 242B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

D242B

Abstract: 3120c BD240C BD242 BD242A BD242B T0-22OB 8700bo
Contextual Info: b U Z4Z • D U ^ M " DU PÏÏP SILICON EPITAXIAL BASE POWER TRANSISTORS I ; m ic r o e l e c t r o n i c s CASE T0-22OB THE BD 24 2 , BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

BD 242 transistors

Contextual Info: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

BD242B

Abstract: 241B BD242 BD242A BOX69477 BD 242 transistors
Contextual Info: BD 242 • BD 242 A ■ BD 242 B PNP SILICON EPITAXIAL BASE POWER TRANSISTORS -Cf- *$ # 5 “ < V?.,. 4 & - 1 zj: ' 4 ! ì sf* 3 g, ’ " CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT

Hitachi DSA00497

Contextual Info: ADE-208-242B Z HRW2502A L Silicon Schottky Barrier Diode for Rectifying Rev. 2 Jan. 1996 Features Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying . • Same power as TO-220AB. • Small outline compared with TO-220AB.

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5D56 Microcontroller D ATA SHE E T D S -LM3S 5D 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 242B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: ADE-208-242B Z HRW25O2A0 Silicon Schottky Barrier Diode for Rectifying I HITACHI Features Rev. 2 Jan. 1996 Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • Same power as TO-220AB. • Small outline compared with TO-220AB.

47C242B

Abstract: 47c242 47c440a code sg TMP47C440A 47c241
Contextual Info: TOSHIBA TMP47C940AE, TMP47C940AG CMOS 4-Bit Microcontroller TMP47C940AE, TMP47C940AG The 47C940A, which is equipped with an EPROM as program memory, is a piggyback type evaluator chip used for develop­ ment and operational confirmation of the 47C440A/242B/241

BD242C

Abstract: 241C 24-2C 241B BD241 BD241A BD241B BD241C BD242 BD242A
Contextual Info: BD241, BD241A, BD241B, BD241C BD242, BD242A, 242B, BD242C BD241,241A, 241B, 241C BD242,242A, 242B, 242C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN C O N FIG U R AT IO N 1. B A S E

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5D56 Microcontroller D ATA SHE E T D S -LM3S 5D 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 242B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

3RT20

Abstract: 3RT20 15-1BB41 3RT20 16-1BB42 3RV20 3RT20 16-2BB42 3RH29 siemens contactors price 3RT20 siemens 16-1BM41 3RT20 23 siemens
Contextual Info: D K A h i h e o r u a r y l, z u i u Controls - Contactors and C ontactor Assem blies In tro d u c tio n Ove rview S ize Type SOO 3R T 20 1 SO 3 R T 20 2 3RT20 c o n ta c to rs Type 3 R T 2 0 15 A C , D C o p e ra tio n p. 3 /8 ,3 /1 1 3 R T 2 0 16 3 R T 2 0 17

uPD765

Abstract: DP8473 N82077 NEC765A PC01 PC87413 PC87414 PC87416 PC87417 tag 9320
Contextual Info: November 2001 Rev 1.1 PC87413, PC87414, PC87416, PC87417 LPC ServerI/O for Servers and Workstations General Description The National Semiconductor PC8741x family of LPC ServerI/O devices “PC8741x” comprises highly integrated Advanced I/O products. The PC8741x is targeted for a wide

EEPROM 256 bytes 24c

Abstract: 24LCS52 JC42 MCP98242 MO-229
Contextual Info: MCP98242 Memory Module Temperature Sensor w/ EEPROM for SPD Features Description • • • • • • Microchip Technology Inc.’s MCP98242 digital temperature sensor converts temperature from -40°C and +125°C to a digital word. This sensor meets JEDEC Specification JC42.4 Mobile Platform Memory

Contextual Info: / BD 241 • BD 2 41A ■ BD 2 41B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO CASE T0-220B THE BD 241, BD 241A AND BD<241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

"AWM Style 20726"

Abstract: 802BY00011 602BY00001 502BY00011 682by00011 "AWM Style 20726 202BY00010 242BY00002 madison 642BY00001
Contextual Info: MULTI-CONDUCTOR 30 AWG 0.025” CENTER FLAT CABLE Major Diameter 0.024 +/- 0.003" Blue Edge Mark 0.025 +/- 0.002" 362BY00001 0-1284063-1 36 0.900 402BY00010 0-1284064-1 40 1.000 442BY00001 0-1284065-1 44 1.100 502BY00011 5-1219763-0 50 1.250 602BY00001 0-1284066-1

71M6543GT/71M6543GHT

Contextual Info: EVALUATION KIT AVAILABLE 71M6543FT/71M6543HT/ 71M6543GT/71M6543GHT General Description The 71M6543FT/71M6543HT/71M6543GT/71M6543GHT 71M654xT are 4th-generation three-phase metering systems-on-chips (SoCs) with a 5MHz, 8051-compatible MPU core, low-power RTC with digital temperature

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N6175

Abstract: 2N6178 2N6177 2N6179 2N6181 2n6176 2n6180 2N6107 40874 BD240B
Contextual Info: 2N6107 PLASTIC FAM ILY [p n-p] silicon [cont'd] fy = 10 MHz min; P j = 40 W max D E S C R IP T IO N V •50 -60 - -70 -80 A Tamp - ° C 25 20-120 -3 A -1 30-150 -2 -4 -1 “ ISO - 'c UJ o> O utput, 25-W Full-Com p. Univ. A m p lifier General Purpose V Ul

MC68HC811E2FN2

Abstract: MC68HC811E2FN MC68HC811E2VFN2 MC68HC711E9CFS2 mc68hc811e2cp2 MC68HC811E2P MC68HC811E2CFN2 MC68HC711E9CFN3 MC68HC811E2MFN2 mc68hc811
Contextual Info: APPENDIX A ELECTRICAL CHARACTERISTICS Table A-1 Maximum Ratings Rating Symbol Value Unit V Supply Voltage VDD —0.3 to + 7.0 Input Voltage Vin -0.3 to + 7.0 V Operating Temperature Range MC68HC 7 11Ex MC68HC(7) 11 ExC MC68HC(7) 11 ExV MC68HC(7)11ExM MC68HC811E2

CT1F

Abstract: smd transistor c009 8051-UART smd diode s6 43a smd transistor c006 PLM51 SAB-C500 CC1H4 SAB-C509 tx c509
Contextual Info: C509-L ht User's Manual 11.97 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C509-L Data Sheet Revision History : 11.97 Previous Releases : 06.96 Original Version Page (new version) Page (prev. Subjects (changes since last revision)