2N3053 Search Results

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.

Contextual Info: 5LE J> m m057& 000btitiS 332 • ZETB^'2 '*7' 0 { NPN LOW LEVEL ZETEX SEMICONDUCTORS Type V CB V ceo V M ax lc V mA M a x V CE sat at V k mA Min f-jat hFE at !b Min M ax 'c m A MHz mA mA Continued P.ot at =ta Package Comple­ ment mW 2N3053 60 40 700 1.4

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N3053

Contextual Info: T -3 3 -0 5 P ow er Transistors 2N3053, 2N3053A HARRI S S E M I C O N D SE CT OR File Number 27E D M3D2S71 0 0 1 ^ 5 960 5 «H AS General-Purpose, Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal A pplications Features:

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8980 2N3053 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR FEATURES = 40V • lc = 0.7A •Ptot TO39 PACKAGE

2N3053

Abstract: transistor 2n3053 2N3053 NPN transistor 2N3053A 2N3019 2N3053 transistor
Contextual Info: Boca Semiconductor Corp. BSC http://www.bocasemi.com M AXIM U M RATINGS Symbol Rating 2N3053 2 N 3 05 3A Unit C o lle ctor-E m itte r Voltage 1 v CEO 40 60 Vdc C o lle ctor-B ase V o lta g e VCBO 60 80 Vdc E m itter-Base V o lta g e vebo 5.0 Vdc C o lle cto r C u rre n t — C o n tin u o u s

2N3053 NPN transistor

Abstract: 2N3053 transistor 2n3053 2N3053 transistor SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 AMPLIFIERS AND SWITCH DESCRIPTION The 2N3053 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for medium-current switching and amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter

2n3053 complementary

Abstract: 2N3053 2N4037 PN3053 PN4037
Contextual Info: 2N/PN3053 2N/PN4037 COMPLEMENTARY SILICON TRANSISTORS T0-92A TO-39 2N/PN3053 NPN & 2N/PN4037(PNP) are complementary silicon planar epitaxial transistors for use in AF medium power drivers and outputs, as well as for switching applications. C E B 2N3053 2NÌ037

SILICON TRANSISTOR 2N3053

Abstract: transistor 2n3053 transistor 335
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3053 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=40V IC=0.7A Ptot=1.0W Rth jc is 35OC/W, Rth(ja) is 175OC/W

RCA-2N3053

Abstract: 2N3053 rca 2N3053 1501 0647 2N3053A 17102 2n3053 RCA
Contextual Info: E SOLID STATE 3875081 Öl G E S O LID STATE » F | 3ä 7S 0ö]T0017101 0 | 01E 17101 D 'p -Z 'J -Z H ig h -S p e e d P o w e r T ra n s is to rs 2N3053, 2N3053A File Number 960 General-Purpose, Medium-Power

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

transistor 2n3053

Abstract: 2N3053 equivalent 0015a 2N3053 NPN transistor SILICON TRANSISTOR 2N3053 2N3053 2N3053 transistor C22B h21e transistor datasheet 2N3053
Contextual Info: 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCEO = 40V

ic 23721

Abstract: 23732 23721
Contextual Info: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S

Contextual Info: 30E D • 7 c15ci237 0G311SS M rrz SGS-THOMSON RfflO g[H](5 i[L[E(gïï^ [MOOi ^ 7 # 2N3053 S G S-THOMSON AMPLIFIERS AND SWITCH DESCRIPTIO N The 2N3053 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-39 metal case, intended for me­ dium-current switching and amplifier applications.

2n3019 equivalent

Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE

2S0571

Abstract: SK3265 2SC3419Y 2SC495 40409 silicon KT919G BFS22A BFS22 2n3053 motorola BLX65E
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 40389 2N3053 2N3053S 2N3053S 40392 40407 40407L 40407S 40544 40544L 40544S 40539 40539L 40539S 2N3053A 2N2949 40360 40360L :g~g~s 45 50 40361l 40361S 40408 40408l 40408S 40409 2S0571K 2S0571l

2N3053L

Contextual Info: 2N3053L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

BCY56

Abstract: BCY59A 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6178

Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

BSY52

Abstract: BCY56 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M a x V CE sat| at V mA V 'c mA Min fT at hFE at Continued Pto, at = 2ag * C Iß Min M ax 'c m A MHz mA mW mA Package Comple­ ment 2N3053 60 40 700 1.4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1.5

2N6180

Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

BCY78

Abstract: BC107 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC177 BCY59
Contextual Info: N P N LOW LEV EL < Type o< CD Max 2N3053 60 V ceO U 'C: V mA V mA mA 40 700 1.4 150 15 !c Ib Min f T at h FE at Min. Max. 50 250 Pto, at Tamb Package Comple­ ment = 25°C lc !c mW mA MHz mA 150 100 50 1000 TO-39 2N4037 50 600 TO-39 2N1131 2N1132 150 15 20