243PF Search Results

oscilloscope pc

Abstract: BAS28 BAW62
Contextual Info: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.

diode rj 93

Contextual Info: bbSB^Bl DQ2b352 40b « A P X N AMER PHILIPS/PISCRETE blE D BAW62 y V HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a DO-35 envelope. The BAW62 is primarily intended for fast logic applications. QUICK REFERENCE DATA Continuous reverse voltage

RC4292

Abstract: raytheon ref
Contextual Info: Section 9 RC4292 RC4292 Negative Switch Mode Power SupplyController Features • Converts a negative voltage into positive and/or negative voltages ■ Wide application voltage range: -20V minimum, -120V maximum ■ High efficiency: 70% typical ■ Adjustable output voltage

a7p marking

Abstract: marking A7p sot23 a7p
Contextual Info: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

a1p diode

Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot
Contextual Info: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

Contextual Info: BAS16 _ y \ _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a m icrom iniature plastic envelope. It is intended fo r high-speed switching in hybrid th ick and th in -film circuits.

Contextual Info: BAV70 . A SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists o f two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended fo r high-speed switching in thick and thin-film circuits. QUICK REFERENCE DATA per diode

BAV10

Abstract: BAW62 bu 11 apx
Contextual Info: • bbSB'ìBl GOSbe1^ IDI * A P X N AMER PHILIPS/DISCRETE BAV10 b^E D > ULTRA-HIGH-SPEED DIODES Silicon planar epitaxial, u ltra -high-speed, high-conductance diode in a DO-35 envelope. The BAV10 is prim arily intended for core gating in very fast m em ories.

enamelled copper wire swg table

Abstract: BS4808 BS4109 awm 2990 vw-1 30v shield cable specification BS4520 RG316DT swg copper wire 25 32 awm 20696 M55162 awm 2896 flat RIBBON CABLE
Contextual Info: 1899 Technical portal and online community for Design Engineers - www.element-14.com Cable & Wire Audio Cable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Automotive Wire . . . . . . . . . . . . . . . . . . . . . . . . . . . Category 5, 6 & 7 Cable. . . . . . . . . . . . . . . . . . . . .