24JUN96 Search Results
24JUN96 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization |
OCR Scan |
50mmx50mmx 200mA 24-Jun-96 | |
ES3001Contextual Info: Tem ic BAQ333.BAQ335 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the BAQ33.BAQ35 / BAQ133.BAQ135 • Very low reverse current |
OCR Scan |
BAQ333. BAQ335 BAQ33. BAQ35 BAQ133. BAQ135 BAQ333 BAQ334 BAQ335 24-Jun-96 ES3001 | |
Contextual Info: Tem ic BYG21 S e m i c o n d u c t o r s Fast Silicon Mesa SMD Rectifier Features • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time • Good switching behaviour • Wave and reflow solderable |
OCR Scan |
BYG21 BYG21K BYG21M 24-Jun-96 | |
Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current |
OCR Scan |
LL4154 1N4154 50mmx50mmx 24-Jun-96 24-Iun-96 | |
1N4148 Micro MELF
Abstract: 1n4148 melf package
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OCR Scan |
MCL4148 MCL4448 1N4148 1N4448 24-Jun-96 1N4148 Micro MELF 1n4148 melf package | |
Ip200mA
Abstract: 600L100
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OCR Scan |
--300K/W 50mmx50mmxl 24-Jun-96 Ip200mA 600L100 | |
Contextual Info: Tem ic SÌ9717CY S e m i c o n d u c t o r s Battery Disconnect Switch Features • 6- to 18-V O p e ra tio n • S e p a ra te L o g ic V o ltag e In p u t • U n d e rv o ita g e L o c k o u t LTVL @ V l = 3 V • S h u td o w n C o n tro l C a p a b ility |
OCR Scan |
9717CY i9717C 16-pin SiQ717CY SO-16 S-48825-- 24-Jun-96 | |
Contextual Info: Tem ic TZMC. S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization |
OCR Scan |
300K/W D-74025 24-Jun-96 | |
Contextual Info: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C |
OCR Scan |
BA982 BA983 50mmx50mmx 24-Jun-96 BA983 | |
Telefunken u 439Contextual Info: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2% |
OCR Scan |
300K/W 50mmx50mmxl D-74025 24-Jun-96 Telefunken u 439 | |
DO 213Contextual Info: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter |
OCR Scan |
BA682 BA683 50mmx50mmx 24-Jun-96 100mA 100MHz, 200MHz, DO 213 | |
SF4001
Abstract: SF4002 SF4003 SF4004 SF4005 SF4006 SF4007
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SF4001. SF4007 SF4001 SF4002 SF4003 SF4004 SF4005 SF4006 SF4001 SF4002 SF4003 SF4004 SF4005 SF4006 SF4007 | |
1N4154
Abstract: LS4154
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LS4154 1N4154 D-74025 24-Jun-96 1N4154 LS4154 | |
TELEFUNKEN diode
Abstract: 1N4154 LL4154
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LL4154 1N4154 D-74025 24-Jun-96 TELEFUNKEN diode 1N4154 LL4154 | |
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1N4154
Abstract: MCL4154
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MCL4154 1N4154 D-74025 24-Jun-96 1N4154 MCL4154 | |
BZX55C
Abstract: Telefunken tk 19 BZX55B
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Original |
BZX55C. D-74025 24-Jun-96 BZX55C Telefunken tk 19 BZX55B | |
BYT53
Abstract: BYT53A BYT53B BYT53C BYT53D BYT53F BYT53G
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BYT53. 24-Jun-96 BYT53A BYT53B BYT53C BYT53D BYT53F BYT53G BYT53 BYT53A BYT53B BYT53C BYT53D BYT53F BYT53G | |
BA1282
Abstract: BA1283 BA682 BA683 BA982 BA983
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BA1282 BA1283 BA682 BA683 BA982 BA983 D-74025 24-Jun-96 BA1283 BA983 | |
Si9718CYContextual Info: Si9718CY Battery Disconnect Switch Features D D D D D 6- to 18-V Operation Separate Logic Voltage Input Undervoltage Lockout UVL @ VL = 3 V Shutdown Control Capability Safe Power Down Description The Si9718CY is a reverse blocking switch for battery disconnect applications. It is an integrated solution for |
Original |
Si9718CY 16-pin SO-16 S-48826--Rev. 24-Jun-96 | |
bas34
Abstract: bas33
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OCR Scan |
BAS33 BAS34 24-Jun-96 BAS335 bas34 | |
Contextual Info: T em ic LS4150 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4150 • Quadro Melf package Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings |
OCR Scan |
LS4150 1N4150 24-Jun-96 | |
Temic Semiconductors 5408
Abstract: telefunken ha 880 sf5408
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OCR Scan |
SF5400. SF5408 SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 Temic Semiconductors 5408 telefunken ha 880 sf5408 | |
Contextual Info: Tem ic BAV100.BAV103 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Applications General purposes Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Repetitive peak reverse voltage Type Symbol Value BAV100 V rrm 60 V BAV101 V rrm |
OCR Scan |
BAV100. BAV103 BAV100 BAV101 BAV102 BAV103 | |
LL4150Contextual Info: Tem ic LL4150 S e m i c o n d u c t o r s Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose Ouse in computer and industrial applications Absolute Maximum Ratings |
OCR Scan |
LL4150 24-Jun-96 LL4150 |