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ROHM Semiconductor BD9G102G-EVK-0011Power Management IC Development Tools Accepts a power supply input range of 6V to 42V, generates output 0.75V to VCC0.8, input range of 8V to 42V, fixed output of 5V can be produced. |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BD9G102G-EVK-0011 | Bulk | 2 |
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50MMX50MMX Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SOD JEDECContextual Info: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter |
OCR Scan |
BAS85 50mmx50mmx1 01-Apr-99 BAS85_ -April-99 SOD JEDEC | |
Contextual Info: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C |
OCR Scan |
BAS86 50mmx50mmx1 01-Apr-99 | |
Contextual Info: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization |
OCR Scan |
50mmx50mmx 200mA 24-Jun-96 | |
Contextual Info: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications |
OCR Scan |
TZM5221 TZM5267B 1N5221 N5267B 50mmx50mmx1 01-Apr-99 | |
Contextual Info: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage |
OCR Scan |
LL4151_ 1N4151 50mmx50mmx1 01-Apr-99 | |
Contextual Info: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current |
OCR Scan |
LL4154 1N4154 50mmx50mmx 24-Jun-96 24-Iun-96 | |
BA979Contextual Info: BA979.BA979S VISHAV Vishay Telefunken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current |
OCR Scan |
BA979 BA979S 50mmx50mmx1 01-Apr-99 | |
1009CContextual Info: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature |
OCR Scan |
BA679 BA679S 50mmx50mmx1 1009c 01-Apr-99 1009C | |
Ip200mA
Abstract: 600L100
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OCR Scan |
--300K/W 50mmx50mmxl 24-Jun-96 Ip200mA 600L100 | |
Contextual Info: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2% |
OCR Scan |
50mmx50mmx1 01-Apr-99 | |
A2 12 zener diode
Abstract: diode ZENER A2 6 A2 9 zener diode
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BZX55B2V4-BZX55B75 500mW, DO-35 OD-27) C/10s A2 12 zener diode diode ZENER A2 6 A2 9 zener diode | |
Contextual Info: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings |
OCR Scan |
TZS4678. TZS4717 300K/W 50mmx50mmx1 100mA Number85613 -Apr-99 01-Apr-99 | |
Contextual Info: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage |
OCR Scan |
LS4151_ 1N4151 01-Apr-99 | |
FZITContextual Info: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization |
OCR Scan |
TZQ5221 TZQ5267B --300K/W 50mmx50mmx1 01-Apr-99 FZIT | |
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Contextual Info: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings |
OCR Scan |
LL4150_ 01-Apr LL4150 01-Apr-99 | |
Telefunken u 439Contextual Info: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2% |
OCR Scan |
300K/W 50mmx50mmxl D-74025 24-Jun-96 Telefunken u 439 | |
DO 213Contextual Info: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter |
OCR Scan |
BA682 BA683 50mmx50mmx 24-Jun-96 100mA 100MHz, 200MHz, DO 213 | |
BU2152FS
Abstract: BD7851FP BU2050F BU2092F BU2092FV BU2099FV HSOP25 SSOP-A32 SSOP-B20
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BU2050F BU2092F BU2092FV BU2099FV BD7851FP BU2152FS 09051EAT03 BU2152FS HSOP25 SSOP-A32 SSOP-B20 | |
58LT00F
Abstract: TA58LT00F
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Original |
TA58LT00F TA58LT00F 58LT00F 2002/95/EC) 58LT00F | |
TA58L05F
Abstract: TA58L06F TA58L08F TA58L09F TA58L10F TA58L12F TA58L15F
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TA58L05 TA58L05F TA58L06F TA58L08F TA58L09F TA58L10F TA58L12F TA58L15F TA58L* TA58L09F TA58L15F | |
125OC
Abstract: CHTA42LPT
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Original |
CHTA42LPT SC-59/SOT-346 SC-59/SOT-346) 300mW SC-59/SO 125OC -55OC CHTA42LPT | |
LL101A
Abstract: LL101B LL101C
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Original |
LL101A LL101C LL101A LL101B D-74025 13-Mar-00 LL101B LL101C | |
LL4150Contextual Info: LL4150 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Low forward voltage drop D High forward current capability Applications 94 9371 High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings Tj = 25_C |
Original |
LL4150 D-74025 01-Apr-99 LL4150 | |
1N4154
Abstract: LS4154
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Original |
LS4154 1N4154 D-74025 24-Jun-96 1N4154 LS4154 |