Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    24N60 Search Results

    SF Impression Pixel

    24N60 Price and Stock

    STMicroelectronics STL24N60M2

    MOSFET N-CH 600V 18A PWRFLAT HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STL24N60M2 Reel 33,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.36025
    		Buy Now
    STL24N60M2 Cut Tape 3,434 1
    • 1 $2.91
    • 10 $2.445
    • 100 $1.9783
    • 1000 $1.50574
    • 10000 $1.50574
    		Buy Now
    Mouser Electronics STL24N60M2 2,694
    • 1 $2.91
    • 10 $2.44
    • 100 $1.98
    • 1000 $1.51
    • 10000 $1.41
    		Buy Now
    Newark STL24N60M2 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    STMicroelectronics STL24N60M2 2,694 1
    • 1 $2.85
    • 10 $2.39
    • 100 $1.94
    • 1000 $1.73
    • 10000 $1.73
    		Buy Now
    TME STL24N60M2 1
    • 1 $3.13
    • 10 $2.82
    • 100 $2.5
    • 1000 $2.02
    • 10000 $1.77
    		Get Quote
    Ameya Holding Limited STL24N60M2 24,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Silica STL24N60M2 17 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    EBV Elektronik STL24N60M2 17 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    STMicroelectronics STI24N60M2

    MOSFET N-CH 600V 18A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STI24N60M2 Tube 2,180 1
    • 1 $2.31
    • 10 $2.31
    • 100 $1.5283
    • 1000 $1.09726
    • 10000 $0.97
    		Buy Now
    STMicroelectronics STI24N60M2 345 1
    • 1 $2.26
    • 10 $1.82
    • 100 $1.5
    • 1000 $1.27
    • 10000 $1.27
    		Buy Now
    TME STI24N60M2 1
    • 1 $2.44
    • 10 $1.94
    • 100 $1.81
    • 1000 $1.81
    • 10000 $1.81
    		Get Quote
    Avnet Silica STI24N60M2 17 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    EBV Elektronik STI24N60M2 17 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    STMicroelectronics STF24N60M6

    MOSFET N-CH 600V TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF24N60M6 Tube 964 1
    • 1 $2.66
    • 10 $2.66
    • 100 $1.2735
    • 1000 $1.2735
    • 10000 $1.2735
    		Buy Now
    Mouser Electronics STF24N60M6 806
    • 1 $1.66
    • 10 $1.66
    • 100 $1.31
    • 1000 $1.27
    • 10000 $1.27
    		Buy Now
    STMicroelectronics STF24N60M6 806 1
    • 1 $1.63
    • 10 $1.63
    • 100 $1.28
    • 1000 $1.25
    • 10000 $1.25
    		Buy Now

    STMicroelectronics STF24N60DM2

    MOSFET N-CH 600V 18A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF24N60DM2 Tube 841 1
    • 1 $2.81
    • 10 $2.81
    • 100 $1.3674
    • 1000 $1.3674
    • 10000 $1.3674
    		Buy Now
    Newark STF24N60DM2 Bulk 873 1
    • 1 $2.29
    • 10 $1.96
    • 100 $1.63
    • 1000 $1.6
    • 10000 $1.6
    		Buy Now
    Ameya Holding Limited STF24N60DM2 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Avnet Silica STF24N60DM2 950 17 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Chip1Stop STF24N60DM2 Tube 1,000
    • 1 $1.82
    • 10 $1.47
    • 100 $1.11
    • 1000 $1.11
    • 10000 $1.11
    		Buy Now
    EBV Elektronik STF24N60DM2 17 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    STMicroelectronics STW24N60M6

    MOSFET N-CH 600V TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STW24N60M6 Tube 596 1
    • 1 $3.27
    • 10 $2.743
    • 100 $2.2194
    • 1000 $1.97282
    • 10000 $1.526
    		Buy Now
    Mouser Electronics STW24N60M6 693
    • 1 $2.45
    • 10 $2.22
    • 100 $1.94
    • 1000 $1.64
    • 10000 $1.59
    		Buy Now
    STMicroelectronics STW24N60M6 693 1
    • 1 $2.4
    • 10 $2.18
    • 100 $1.9
    • 1000 $1.87
    • 10000 $1.87
    		Buy Now
    TME STW24N60M6 1
    • 1 $3.13
    • 10 $2.82
    • 100 $2.24
    • 1000 $2.04
    • 10000 $2.04
    		Get Quote
    Avnet Silica STW24N60M6 17 Weeks 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 24N60 price and stock on Findchips.com

    24N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    24N60 IXYS Hiperfast IGBT Short Circuit Soa Capability Original PDF
    24N60C3 Infineon Technologies Original PDF
    24N60D1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    24N60D1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    24N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N60

    Abstract: 24N60A 1365c
    Text: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


    Original     		PDF 24N60 24N60A 24N60 24N60A 1365c

    IXGH24N60B

    Abstract: RG10
    Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 24N60B O-247 728B1 IXGH24N60B RG10

    24N60

    Abstract: IXGH24N50B IXGH24N60B
    Text: HiPerFASTTM IGBT IXGH24N50B 24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B

    IXGH24N60CD1

    Abstract: ISOPLUS247
    Text: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 24N60CD1 ISOPLUS247TM IXGH24N60CD1 ISOPLUS247

    c2548

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1

    C4080

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET


    Original     		PDF 24N60C5M O-220 20070704a C4080

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 24N60C IC110 E153432

    W2515

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1

    G20N60

    Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
    Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48


    Original     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1S IXGH24N60AU1 G20N60 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247

    24N60CD1

    Abstract: IXGH24N60CD1
    Text: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original     		PDF 24N60CD1 IC110 O-268 O-247 IXGH24N60CD1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 24N60C5M O-220

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 24N60C ISOPLUS247TM IC110 728B1

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE sat tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 24N60B 24N60BD1 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 24N60C5M O-220 20090209d

    931 diode smd

    Abstract: g20n60
    Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient


    OCR Scan     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60

    6008B

    Abstract: No abstract text available
    Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C


    OCR Scan     		PDF 24N60AU1 6008B

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    24N50

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH


    OCR Scan     		PDF 24N50BU1 24N60BU1 24N50 24N60 -247A 24N50 IXGH24N50BU1 IXGH24N60BU1

    Untitled

    Abstract: No abstract text available
    Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C


    OCR Scan     		PDF 24N60A 24N60A 24N60AU1 4bflb22b

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 24N60CD1

    smd diode JC 0p

    Abstract: DIODE SMD GEM IXGH24N60AU1S
    Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600


    OCR Scan     		PDF 24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S

    XSH24N60

    Abstract: 24n60
    Text: P IX Y S HiPerFAST IGBT IXSH 24N60 IXSH 24N60A v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V " ces Tj = 25° C to 150° C 600 V VCGR Tj = 2 5°C tO 150°C; RGE= 1 Mi2 600 V vGES


    OCR Scan     		PDF 24N60 24N60A O-247 /XSH24N60 24N60A IXSH24N60U1 IXSH24N60AU1 XSH24N60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFAST IGBT IXSH 24N60 IXSH 24N60A VC E S ^C25 V CE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability G_ Sym bol Test Conditions Maximum Ratings V ces Tj = 25°C to 15 0CC 6 00 V v CGR T j = 25°C to 150°C; R GE = 1 M Q 600 V v GES


    OCR Scan     		PDF 24N60 24N60A O-247 24N60U1 24N60AU1

    D1488

    Abstract: No abstract text available
    Text: IZ IJ X Y S HiPerFAST IGBT Lights peed™ Series IXGH 24N60C IXGT 24N60C V CES ^C25 V CE sat typ * fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 24N60C Cto150Â 13/10Nm/lb O-247 O-268 D1488