24N60C Search Results

IXGH24N60CD1

Abstract: ISOPLUS247
Contextual Info: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

C4080

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET

Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

24N60CD1

Abstract: IXGH24N60CD1
Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions

Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

D1488

Contextual Info: IZ IJ X Y S HiPerFAST IGBT Lights peed™ Series IXGH 24N60C IXGT 24N60C V CES ^C25 V CE sat typ * fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Sym bol Test C onditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT with Diode IXGR 24N60CD1 VCES = 600 V IC25 = 42 A VCE sat = 2.5 V ISOPLUS247TM (Electrically Isolated Back Surface) Preliminary data ISOPLUS 247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information ID25 = 24 A = 600 V VDSS RDS on max = 0.165 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)

DSA003710

Abstract: MA660
Contextual Info: IXKH 24N60C5 IXKP 24N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 24 A VDSS = 600 V RDS on max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP)

24N60

Contextual Info: HiPerFASTTM IGBT IXGR 24N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 42 A = 2.5 V = 60 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

ge motor 752

Contextual Info: v CES IXGH 24N60C IXGT 24N60C HiPerFAST IGBT Lightspeed™ Series ^C25 VCE sat typ t.t fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES V CGR T j = 25° C to 150° C 600 V T j = 25° C to 150° C; RGE = 1 m î î

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET

24N60C

Contextual Info: HiPerFASTTM IGBT LightspeedTM Series IXGH 24N60C IXGT 24N60C VCES IC25 VCE sat typ tfi typ = 600 V = 48 A = 2.1 V = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES

24N60C5

Abstract: ixkh24n60c5 IXKP24N60C5 K 739 mosfet
Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D q D(TAB) S S TO-220 AB (IXKP) G D S

24N60CD1

Abstract: diode p1000
Contextual Info: DIXYS HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 VCES ^C25 V CE sat = 600 V = 48 A = 2.5 V P relim inary data sheet Symbol Test Conditions V „„ Tj = 25° C to 150° C 600 V 600 V Continuous ±20 V Transient ±30 V Tc = 25° C

Contextual Info: IXKH 24N60C5 IXKP 24N60C5 CoolMOS 1 Power MOSFET ID25 = 24 A VDSS = 600 V RDS on) max = 0.165 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D Preliminary data TO-247 AD (IXKH) G G D fl D(TAB) S S TO-220 AB (IXKP) G D

24N60C

Abstract: 98936
Contextual Info: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 24N60C IXGP 24N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C

Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET

Contextual Info: HiPerFASTTM IGBT with Diode Lightspeed Series IXGH 24N60CD1 VCES = 600 V IXGT 24N60CD1 IC25 = 48 A VCE sat = 2.5 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous