24P6 Search Results

Contextual Info: Features • 2.7 to 3.6V Supply - Full Read and Write Operation • Low Power Dissipation - 8 mA Active Current - 50 nA CMOS Standby Current • Read Access Time - 250 ns • Byte Write - 3 ms • Direct Microprocessor Control - DATA Polling - READ/BUSY Open Drain Output on TSOP

at27hc642

Contextual Info: Ä* tO 1992 Features • Bipolar Speed Read Access Time - 35ns • Low Power CMOS Operation 25 mA max. Standby 45 mA max. Active at 10 MHz • Direct Bipolar PROM Replacement • High Output Drtve Capability • Reprogrammable •10Ovis/byte typical Tested 100%for Programmability

28C16 atmel

Abstract: at28c16 eeprom AT28C16E at28c16 atmel 530 eeprom AT28C16
Contextual Info: Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control

Contextual Info: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 |xA Standby Current AT28HC191L 80 mA Active Current E2PROM Technology -100% Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times

AT29C040A

Abstract: AT29C040A-10 jedec mo-142 dd
Contextual Info: Features iflmËL Fast Read Access Time -100 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 2048 Sectors (256 bytes/sector) Internal Address and Data Latches for 256-Bytes Internal Program Control and Timer

at28

Abstract: AT28HC16LN-55PI AT28HC16-45 AT28HC16-55 AT28HC16-70 AT28HC16L-55 24P6
Contextual Info: AT28HC16/L Features • • • • • • • • • • Fast Read Access Time • 45ns Fast Byte Write - 1ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

28C16

Abstract: AT28C16 AT28C16-15 AT28C16-20 AT28C16-25
Contextual Info: ATMEL CORP 43E I> . r • B i 1074177 i r i 1 i 0GIBS22 Q ■ATM AT28C16 Features • • • • • • • • • • Fast Read Access Tim e-150ns Fast Byte Write - 200|iS o r 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer

AT28C04

Abstract: 28C04 AT28C04-15 AT28C04E
Contextual Info: 43E D ATMEL CORP 107M177 □□□1512 fl 131 ATM AT28C04 T -V é -1 3 -2 1 Features • Fast Read Access Time -150ns • • Fast Byte Write • 200ns or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Betore Write

AT28C16F

Abstract: AT28C16 28C16 AT28C16-20
Contextual Info: AT28C16 Features « Fast Read Access Time -150 ns • Fast Byte Write - 200 us or 1 ms • Self-Timed Byte Write Cycle internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING • Low Power

Contextual Info:  7& 3DUDOOHO 3520. .[  )HDWXUHV ‡ )DVW5HDG$FFHVV7LPHQV ‡ )DVW%\WH:ULWHPV ‡ 6HOI7LPHG%\WH:ULWH&\FOH ‡ ‡ ‡ ‡ ‡ ‡ ‡ ±,QWHUQDO$GGUHVVDQG'DWD/DWFKHV ±,QWHUQDO&RQWURO7LPHU ±$XWRPDWLF&OHDU%HIRUH:ULWH 'LUHFW0LFURSURFHVVRU&RQWURO

42P-6063-0731-0

Abstract: dacron
Contextual Info: DIN SPECIFICATIONS Series DIN 41612 Style 6033 6043 B&C Q&R GENERAL No. of Contacts 32,48,64,96 20,32,48,96 Temperature Range -60°C to +140°C -65°C to +140°C ELECTRICAL DATA Current Rating 1 Amp @ 70°C 1 Amp @ 70°C Contact Resistance 20 Milliohms Max

Contextual Info: DIN Inverse Style M Multipurpose 6105 Series Multipurpose Pin Connector Recognized as the leader in compliant pin C-Pressk technology, Winchester has developed this special version of the Inverse Multipurpose DIN pin connector. Uniquely designed for mixed power and

Contextual Info: AT28C16 Features • Fast Read Access Time - 1 50ns • Fast Byte Write - 200ns or 1 ms • Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control DATA POLLING • Low Power

at27hc642

Contextual Info: AT27HC641R/2R Features • • • • • • • • • • • Bipolar Speed Read Access Time - 35ns Low Power CMOS Operation 25 mA max. Standby 45 mA max. Active at 10 MHz Direct Bipolar PROM Replacement High Output Drive Capability Reprogrammable - I00us/byte typical

Contextual Info: AT28C16 Features • • • • • • • • • • Fast Read Access Time -150 ns Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Autom atic Clear Before Write Direct Microprocessor Control

AT28C04E

Abstract: AT28C04-20 AT28C04-25
Contextual Info: AT28C04 Features • • • • • • • • • • Fast Read Access T im e-15 0n s Fast Byte Write - 200 is or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

AT28C04-20

Abstract: 28c04
Contextual Info: AT28C04 Features • • • • • • • • • • Fast Read Access Time -150 ns Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control

TSOP 66 Package thermal resistance

Abstract: 7244k 20P3 28P6 TSOP 66 thermal resistance
Contextual Info: Packages Thermal Characteristics of Atmel Packages The thermal performance of the semiconductor package is a very important consideration for the board designer. The reliability and functional life of the device is directly related to its junction operating temperature. As the temperature of the device increases, the stability

MO-142

Abstract: PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC JEDEC MO-229 atmel MO-115 64 CERAMIC LEADLESS CHIP CARRIER LCC 8S2 EIAJ SOIC CERAMIC LEADLESS CHIP CARRIER LCC 24 dd 127 dd 127 d 3302 tsop soic 20 lead wide
Contextual Info: Packages Table of Contents Each Atmel data sheet includes an Ordering Information Section which specifies the package 1 types available. This section provides size specifications and outlines for all package types. Package Description See Page 32B 32 Lead, 0.600" Wide,

AT28HC191

Abstract: AT28HC191-45PI AT-28HC191 AT28HC191L 28HC191 24P6 AT28HC19135DC
Contextual Info: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 |xA Standby Current {AT28HC191L 80 mA Active Current E2PROM Technology -100% Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times

AT28C16 DM

Abstract: 28C16 AT28C16 AT28C16-15 AT28C16-20 AT28C16-25 AT28C16E AT28C16E20
Contextual Info: AT28C16 Features Fast Read Access Time -150 ns Fast Byte Write - 200 is or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING Low Power 30 mA Active Current

AT28HC16-45DC

Abstract: AAVS 28HC16
Contextual Info: ATHEL CORP EOE D 1074177 _ QOGOSn S • AT28HC16/L T -4 t> -v 3 -Z -7 Features • Fast Read Access Time -45ns • Fast Byte Write - 1ms • Self-Timed Byte Write Cycle Internal Address and'Data Latches Internal Control Timer Automatic Clear Before Write • Direct Microprocessor Control

28hc16

Abstract: AT28HC16LN-55PI 28HC16-45 atmel 614 CERAMIC LEADLESS CHIP CARRIER LV 2403 AT28HC16-45 AT28HC16L-55 AT28HC16-55PC tdf4
Contextual Info: Features • • • • • • • • • • Fast Read Access Time - 45ns Fast Byte Write - 1ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATS POLLING

AT27HC641

Abstract: 12141S1 642R AT27HC641R-35DC F117 CODE AT27HC642R-35DC AT27HC641R-45DC 5962-87515 atmel 64 atmel64
Contextual Info: Ä f 1 0 1992 Features 4lmiL • Bipolar Speed Read Access Time - 35ns • Low Power CMOS Operation 25 mA max. Standby 45 mA max. Active at 10 MHz • Direct Bipolar PROM Replacement • High Output Drive Capability • Reprogrammable • 100u*/byte typical