250 3B7 Search Results

Contextual Info: Philips Components Material grade specification 3B7 3B7 SPECIFICATIONS SYMBOL µi B tanδ/µi DF αF ρ TC density CONDITIONS 25 °C; ≤10 kHz; 0.1 mT 25 °C; 10 kHz; 250 A/ m 100 °C; 10 kHz; 250 A/ m 25 °C; 100 kHz; 0.1 mT 25 °C; 500 kHz; 0.1 mT 25 °C; 1 MHz;

that 2159

Abstract: 2B252 3B502 that+2159 2B103
Contextual Info: POWER INDUCTORS - THRU HOLE B High Current Filter Inductors PART NUMBER 1B252 1B502 1B103 1B253 1B503 1B753 1B104 2B252 2B392 2B502 2B103 2B253 3B501 3B751 3B102 3B252 3B502 3B752 3B103 INDUCTANCE @ 1kHz ±10% 25 µH 50 µH 100 µH 250 µH 500 µH 750 µH

Contextual Info: PRELIM INARY n Advanced Micro Devices AmCOOIAFLKA 1 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current

2n6520

Abstract: 2N6517 2N6515 2N6517 MOTOROLA 2N6519 transistors aio 20
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N6517 PNP 2N 6519 2N652Ö PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage 2N6515 2N6517 2N6520 2N6519 v CEO 250 300 350 Vdc Collector-Base Voltage VCBO

Contextual Info: Inductors AXIAL LEAD TYPE, TP SERIES [RCJ APPROVED] TP0206 TYPE 005±0.05 [.020±.002] am , ° 27 [1.063] min. 27 [1.063] min. 6.35 ±0.25 [.250 ±.010] 02.42 ±0.25 [.095 ±.010] Dimensions in mm [inches] CHARACTERISTICS Operating temperature range -5 5 to +125°C[ — 67to +257°F]

Contextual Info: IRFS244A A dvanced Power MOSEET FEATURES BVDSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.28 Q. lD = 10.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

SC250D3

Abstract: 2sc2501
Contextual Info: MOTOROLA SC ÍD I OD ES /O PTO} 77 Öl D e | b3b72SS □ □ 7 cia37 7 J V ' à S - ' / S ' SC 250 S C 2 5 0 3 SC 251 T riacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls,

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . ARS/AR25 SERIES HIGH CURRENT PLASTIC SILICON RECTIFIER FEATURES: VOLT AGE RANGE 5 0 to 1 0 0 0 Volts Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100°C

IC 4016 PIN DIAGRAM

Abstract: MC4016 internal circuit diagram ic ct 4017 pin diagram of ic 4016 4017 equivalent MC4016 lm 4017 ft 4017 pin diagram 4019 ALCO BCD
Contextual Info: ^M C4316 ^MC4317 XMC43Ì8 MC4319 MOTOROLA PROGRAMMABLE MODULO-N COUNTERS L SU FFIX C E R A M IC PA C K A G E C A S E 62 0 I F SU FFIX C E R A M IC P A C K A G E C A S E 650 All Types: Total Power Dissipation = Input Loading Factor: 250 mW typ/pkg Clock, PE = 2

25CC

Abstract: 2N5086 2N5401 MMBT5086 MMBT5087 MMBT5088 MMBT5089 MMBT5401 MPSA18 MMBT6517
Contextual Info: DF|t.3b7ES4 0DÔED47 3 | ~ M O T O R O L A SC Í X S T R S / R FD- r 6367254 MOTOROLA SC XSTRS/R > M A X IM U M RATINGS 96D F * Rating Value v CEO 50 Vdc Collector-Base Voltage VcBO 50 Vdc Emitter-Base Voltage Veb O 3.0 Vdc ic 50 mAdc Symbol Max Unit Pd

triac driver opto moc3021

Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
Contextual Info: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .

that 2159

Contextual Info: POWER INDUCTORS - THRU HOLE POWER INDUCTORS - LEADED BLF PART NUMBER 1B252LF 1B502LF 1B103LF 1B253LF 1B503LF 1B753LF 1B104LF 2B252LF 2B392LF 2B502LF 2B103LF 2B253LF 3B501LF 3B751LF 3B102LF 3B252LF 3B502LF 3B752LF 3B103LF RoHS High Current Filter Inductors

rm 6203

Abstract: wabash relay ci rm 6203 ta 6203 6203 power switch IC 6201 coto 6202 ic 6206 coto 6204 6205
Contextual Info: KEARNEV-NATL/COTO U A BA S H blE » • 5tnb74ö 00004^0 3b7 «COTO COTO WABASH A Kearney National 6200 Company Series High Voltage Solid State Relays The COTO WABASH 6200 Series FEATURES High Voltage Solid State Relays offer the designer an alternative to electromechanical

Contextual Info: MOTORO LA SC O I O D E S / O P T O } 6367255 MOTOROLA ' SC 34 DE | L.3b72S5 G03Ö214 □ | DIODES/OPTO 34 c 38214 D 7 * -2 - ? - / 7 . MICRO-T (continued) MMT2484 — NPN LOW CURRENT AMPLIFIER TRANSISTOR • designed for low-noise amplifier. Pin 1. Base

cd4611

Abstract: CMOS BCD-TO-7-SEGMENT LATCH DECODER DRIVERS CD4611B 5082-7404 C04555
Contextual Info: G E SOLID STATE Dl i>Ë| 3B7S0ai Q0133k3 T 3Ö75081 G E SOLID STATE 01E 13363 _ D T-S/-/7 CD4511B Types CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Types 20-Volt Rating B a t e The CD4511B types are BCD-to-7-segment latch decoder drivers constructed with

LTD524P

Abstract: LTD-524P 524P LTD-524G LTD-524 MI-33
Contextual Info: •;.n JLITE-ON 31E INC X ,_ LST1[@] fl D El 5S3L.3b7 0G02407 h EJLTN LTD-524 SERIES 0.43" DUAL D IG IT NUMERIC D ISPLA YS FEA TU RES • .43 INCH 11.0mm D IG IT H EIG H T. • CONTINUOUS UN IFO RM SEGM EN TS. • CHOICE OF F IV E B R IG H T C O LO R S -R ED /B R IG H T

10549/BFAJC

Contextual Info: MOTOROLA M M SC íílEPIORY/ASI bSE D • b 3b72S l G O flW ñ T33 10549 O T O R O L A 1024-Bit Programmable Read Only Memory (PROM) ELECTRICALLY TESTED PER: MPG10549 This device is a 256-word x 4-bit field programmable read only memory (PROM). Prior to programming, all stored bit are at logic 1 (high) levels. The logic

Contextual Info: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost

2N6428

Contextual Info: MOTORCLA SC XSTRS/R 12E D I F fe,3b7254 QOaSf lE] , M A X I M U M R A T IN G S Sym bol V a lu e C otle c tor-E m itte r V o ltag e R a ting VCEO 50 U n it Vdc Collector-B ase V o lta g e VCBO 60 V dc E m itter-B ase V o ltag e Ve b o 6 .0 V dc C ollec to r C u rre n t — C ontin uous

MTH15N20

Abstract: MTM15N20 sc 3198 transistor AN569 c 3198 transistor
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • fc.3b7ESH GDIflSfifl b7S ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES

marking 68g

Abstract: 25CC BCW65A BCW67 BCW67A BCW67B BCW67C BCW68 BCW68F BCW68G
Contextual Info: r 6 3 6 7 2 5 4 MOTOROLA SC DE I t,3b75S 4 D D f l n S l Tb M O T O R O L A SC Î X S T R S / R F> 96D 8 1 9 5 1 , _ CXSTRS/.R F Rating Sym bol Value VcEO VCBO V eb o 'c 32 60 5.0 800 mAdc Sym bol Max U nit Pd 225 mW 1.8 mW/°C R»j a 556 °C/mW pd 300 mW

T1P49

Abstract: T1P50 T1P-50 motorola dice
Contextual Info: MOTOROLA SC ÎDIODE S/ OPTOÏ 6367255 MOTOROLA T m SC D eT | t>3b7S5S □□37'ibfl 1 D IO D ES/O PTO 3^ c 37968 D 7~ 33"Oi SILICON POWER TRANSISTOR DICE (continued) TIPC47 DIE NO. — NPN LINE SOURCE — PL500.E572 This die provides performance equal to or better than that of

BUS36

Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L
Contextual Info: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,

2N6094

Contextual Info: MOTOROLA ! SC {DIODES/OPTO} 6367255 MOTOROLA SC 3M D ET|t.3b7255 DIODES/OPTO 34C 0030073 38073 SILICON RF TRANSISTOR DICE (continued) 7 T *- ? ? - W 2C6094 DIE NO. — PNP LINE SOURCE — RF605.323 This die provides performance equal to or better than that of