250 VOLT 100 AMP NPN TRANSISTOR Search Results

MD14

Abstract: TRSP4015 TRSP2755S TRSP3015 TRSP3015S TRSP3505 TRSP3515S TRSP4015S TRSP4255S TRS4506
Contextual Info: HIGH VOLTAGE flO DE • 4 471D7Ö 00000G7 T SILICON PNP - POWER TRANSISTORS MAX. COLL. DISS. in Free Air #25“ C MAX. THERMAL RES. Junctiqp to Case - h FE BIAS T E M R Watts Is Ic BV cb q BV “ ° BVcE° B V « , @280 U 0118»» (AMP) (AMP) (VOLT) (VO LT) (VOLT)

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

1000 volt pnp transistor

Abstract: IC 7424 800 volt PNP transistor
Contextual Info: PRELIMINARY SFT5321/23-28D SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 2 AMP NPN - 2 AMP PNP 75 VOLT NPN - 75 VOLT PNP NPN AND PNP BIPOLAR COMPLEMENTARY TRANSISTOR Designer’s Data Sheet

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

TRS601

Contextual Info: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors

T1IS

Abstract: 60 amp 600 Volt Diode 2S05 Diode TRS3015 MD14 TRS-3204S TRS-3604S TRS-4014S TRS-4404S TRS-5204S
Contextual Info: 3869720 GENERAL'DIODE CORP GENERAL DIODE CORP 07C 00251 D -7”- 3 3 t£ / Dif| 3 0 ^ 7 8 0 DD0D551 5 07 SILICON NPN* Power Transistors TYPE NO. TRS-3204S tc MAX. COLL. OISS. HI Fit« Ah #25*C P« rc/D M U ) MAX. THERMAL RES. Janetion lo C t u I7.S ABSOLUT :MAX. RATINGS #2S* C.

2N6547

Abstract: 2N654 12 volt 200 Amp PWM 2N6546
Contextual Info: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line

2N6547

Abstract: 2N6546 12 volt 200 Amp PWM
Contextual Info: Æ&m o s p e c SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS NPN The 2N6546 and 2N6547 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fail 2N6546 2N6547 time is criticai.they are particularly, suited for 115 and 220 volt line

BDW42G

Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

icl8083

Abstract: ICL8063 equivalent 2n3055 Equivalent ICL8063CPE ICL8063 2N3055 equivalent transistor NUMBER 2N3055 power amplifier circuit power amplifier transformer 2n3055 pin configuration transistor 2n3055 2N3055 diagram with power supply
Contextual Info: ONüniran ICL8063 Power Transistor Driver-Amplifier Designed to operate with all varieties of operational amplifiers and other functions, two external power transistors o f any construction technique, and 8 to TO passive components, the ICL8063 is ideal for use in such

BDW42G

Abstract: BDW46G BDW47G BDW42 BDW46 BDW47 250 volt 100 amp npn transistor
Contextual Info: BDW42 - NPN, BDW46, BDW47 - PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium-power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

BDW47

Abstract: BDW42 BDW42G BDW46 BDW46G BDW47G pnp high emitter base voltage 15 volt
Contextual Info: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

TO-220AB transistor package

Abstract: bdw42G
Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

Contextual Info: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.

Contextual Info: BDW42 − NPN, BDW46, BDW47 − PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications.

2N6545

Abstract: 2N6544 S200 300 volt 16 ampere transistor
Contextual Info: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line

transistor NPN 30 watt

Abstract: transistor Ic 1A NPN FHFCX491 npn transistor 60 volt 5v power transistor 60V transistor npn 1a TRANSISTOR NPN 60V Collector 5v npn TRANSISTOR
Contextual Info: NPN ᒦ৖ൈहࡍྯ૵਌ NPN Medium Power Transistor NPN Medium Power Transistor DESCRIPTION & FEATURES 60 Volt VCEO 1A Amp continuous current FHFCX491 NPN ᒦ৖ൈहࡍྯ૵਌ 概述及特點 SOT-89 Ptot =1 Watt PIN ASSIGNMENT 引腳說明 PIN NAME

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

2N3055 equivalent transistor NUMBER

Abstract: Y2w TRANSISTOR 2n3055 motor control circuits schematic diagram audio power amplifier using 2n3055 2N3055 equivalent 2N3055 diagram with power supply 2N3055 transistor equivalent transistor Y2W ICL8063 circuit diagram equivalent transistor 2n3055
Contextual Info: 01E 10753 3875081 G E SOLID STATE D ICL8063 Power Transistor Driver/Amplifier GENERAL DESCRIPTION FEATURES The ICL8063 is a unique monolithic power transistor driv­ er and amplifier that allows construction of minimum chip power amplifier systems. It includes built in safe operating

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

2N6718

Abstract: 2N6716 2N6717 ic-250mA DSA003749
Contextual Info: 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6716 Collector-Base Voltage VCBO

Ztx653

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

GSTU6030

Abstract: 910 IC GSTU6035 GSTU6040 TWX910-950-1942
Contextual Info: SflUARE D CO/ G E N E R A L SSSSSDfl •=15 0DD2110 3 95D 0 2 1 9 0 3 9 1 8 5 9 0 GEN ERAL SEMICONDUCTOR •yC General Sf- Semiconductor « Industries, Inc r-3 3 -/3 • GSTU6030 GSTU6035 GSTU6040 B O U H R E n COMPHNY P/vt" TRANSISTORS HIGH POWER NPN D The GSTU series is a NPN silicon transistor designed for high speed switching systems. This

Contextual Info: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line−operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS