ZTX449 Search Results

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

ZTX449

Contextual Info: NPN Silicon Planar Medium Power Transistor ZTX449 DESCRIPTION The Z T X 4 4 9 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power dissipation, 1W at 2 5 ° C ambient temperature,

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 IS S U E 2 - M A R C H 1994_ FEATU RES * 30 V o lt V,CEO 1 A m p c o n tin u o u s cu rre n t P,o,= 1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R SYM BOL V ALU E

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 – MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage

NPN Transistor TO92 40V 200mA

Abstract: FXT449 ZTX449 DSA0037526
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT449 ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: ZTX449M1 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

transistor JSW

Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
Contextual Info: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 -M A R C H 1994_ FEATURES * 30 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage v CBO

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Ztx653

Contextual Info: Not Recommended for New Design Please Use ZTX449 / ZTX453 / ZTX653 2N6716 2N6717 2N6718 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

ZTX449

Contextual Info: Not Recommended for New Design Please Use ZTX449 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT449 ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.

70570

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SERT 93 FEATURES * * 30 Volt VCE0 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Em itter Voltage VALUE UNIT

Contextual Info: DISCONTINUED PLEASE USE ZTX449 NPN SILICON PLANAR FXT449 MEDIUM POWER TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX449 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

NPN Transistor TO92 40V 200mA

Abstract: ZTX449 DSA0037665
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX449 ISSUE 2 – MARCH 1994 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 VCE=10V tf,tr,td ns 0.8 IC/IB=10 tf Switching time VCE sat - (Volts) 150 0.6 0.4

Contextual Info: ZTX449 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)30è V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

ZTX451M1

Abstract: ZTX649M1 ZTX651M1 ZTX653M1 ZTX655M1 ZTX657M1 ZTX749M1 ZTX751M1 ZTX753M1 ZTX755M1
Contextual Info: bOE D 4 • WD57Û 0007b63 ßb5 ■ Z E T B CENTRE BASE E-LINE 'M 1' ZETEX SEMI CONDUCTORS E-LINE " M 1 " SPECIFICATIONS BIPOLAR Super E-line M l Transistors Max. Cont. Max. Type V at Min. f T at •c •c hFE ' cm V CB0 VcEO V Max. VC£(satl at mA A V •b

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.