2500V 20A DIODE Search Results

FZ1600R12KF4

Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
Contextual Info: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC

ISOPLUS247

Abstract: IXFR40N90P 100A MOSFET ixys
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR40N90P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1100 V VGSS Continuous ± 30 V VGSM Transient

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C

16-06A

Abstract: DSEA16-06AC 1606a
Contextual Info: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol

MOSFET circuit welding INVERTER

Abstract: MOSFET welding INVERTER MOSFET welding INVERTER 200A 600V igbt dc to dc buck converter 600V 30A igbt dc to dc buck converter 200v dc motor igbt dc to ac inverter by scr induction heating 600V igbt dc to dc boost converter SCR Inverter
Contextual Info: TM Global Power-Semiconductor Solution Provider A Quick Reference Guide IGBTs ● MOSFET MODULES ● IPMs ● DIP-IPMs ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES ● FAST RECOVERY AND THREE-PHASE DIODE MODULES

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)

A 3120V

Abstract: 205-3CC-DM-1 m7 diode 205-2CC-DM-3 205-3CC-DM-3 dm 0256 3120v led diode song chuan e419
Contextual Info: 205 SONG CHUAN Features □ DPDT ; TPDT General Purpose Power Relay. □ DC / AC Coil. □ Single or Twin contacts with / without gold plated. □ With position indicator, manual override and override level. □ Optional LED and protection diode. □ Comply with RoHS-Directive 2002/95/EC.

Contextual Info: DIODE MODULE ダイオードモジュール DF20NA80/160 ~ − 0.50±0.15 20.00±0.50 22.90±0.50 3.10 ＋0.20 −0.10 A（2：1） （0.10） （0.65） （0.25） （2.40） Tc point A （1.80） （0.20） （1.50） （2.10） （0.65） （0.25） bottom side

205-3CC-DM-1

Abstract: 240VDC song chuan diode 66a song chuan 205 E88991 247A2
Contextual Info: SONG CHUAN 205 Features ϭ DPDT ; TPDT General Purpose Power Relay. ϭ DC / AC Coil. ϭ Single or Twin contacts with / without gold plated. ϭ With position indicator, manual override and override level. ϭ Optional LED and protection diode. ϭ Comply with RoHS-Directive 2002/95/EC.

GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Contextual Info: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES

MZC300

Contextual Info: MZC300 MZA300 MZK300 MZ300 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper

Contextual Info: MZC400 MZA400 MZK400 MZ400 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper

MZ-150

Abstract: MZ150
Contextual Info: MZC150 MZA150 MZK150 MZ150 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper

TP100

Contextual Info: MZC200 MZA200 MZK200 MZ200 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper

MZ300

Contextual Info: MZC300 MZA300 MZK300 MZ300 Fast Recovery Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n Inverter n Inductive heating n Chopper

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings

20N120C3

Contextual Info: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM

Contextual Info: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGR50N60C2

Contextual Info: HiPerFASTTM High Speed IGBT C2-Class w/ Diode IXGR50N60C2 IXGR50N60C2D1 VCES IC110 VCE sat tfi(typ) Symbol Test Conditions VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V = = £ = 600V 36A 2.7V 48ns Maximum Ratings VGES

DIODE 20A 600V

Abstract: IT5 rectifier
Contextual Info: £ÿj SGS-THOMSON n0œilLI0ÎIM [iïlBCi STTB2006P I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 20A I f (a v ) V 600V rrm (typ) 55ns (max) 1.3V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­ TIONS: Snubbing or clamping, demagnetization

3 phase IGBT inverter

Abstract: igbt 150v 30a SMD DIODE BOOK 30N120D1 igbt 1600V 45A 40a 400v to-247 1600v 30A to247
Contextual Info: DATA BOOK BOOK 2000 1998 DATA New Products Check out the following new products for leading edge performance in Power Semiconductors: PRODUCT TYPES DESCRIPTION PART NUMBER Highest Current FETS and IGBTs in TO-247 Outline HiPerFET and IGBT switches in our PLUS247 ,

stk760

Abstract: RCC22 710a RB39 a10531 A1053 ITF02483 ITF02484 ITF02485 Rectification Active converter SANYO
Contextual Info: Ordering number : EN*A1053A Thick-Film Hybrid IC STK760-710A-E Single-phase Rectification PFC Hybrid IC Overview The STK760-710A-E is a power hybrid IC that incorporates active devices including a bridge diode, IGBT, FRD and a driver circuit necessary for configuring a power factor correction PFC circuit in the same package.

68w Transistor smd

Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Contextual Info: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W