2501N Search Results

Contextual Info: QPL Attenuators - Fixed Coaxial M IL IT A R Y M ID W E S T D IM E N S IO N A A T T E N U A T IO N FREQUENCY C O M M E R C IA L PART NO. PART NO. IN C H E S m m V A L U E (d B RANGE ALTERNATE (m a x ) -0 1 -0 2 -0 3 M 3933/24-01N M3933/24-02N M 3933/24-03N

Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501NZ

Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501N

Abstract: MOSFET TSSOP-8 dual n-channel 2501N N-Channel 2.5V Dual N-Channel 2.5V
Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

g2501

Abstract: ntba transistor marking N1 B82791-G2251-N20 G2301 B82791-H2301-N1 B82791-H2401-N1 electronic transformer halogen B82791-H2251-N20 marking n20
Contextual Info: Chokes for Power Lines B82791-H Current-Compensated Ring Core Double Chokes B82791-G Rated voltage 250 Vac Rated current 0,25 to 0,7 A Rated inductance 4,7 to 47 mH Construction • Current-compensated ring core double choke with ferrite core ■ Polycarbonate case

Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2501NZ

Abstract: FDW2501NZ
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2510N

Abstract: 2501N 2502N 2504N 2506N KPBC25005N-2510N kpbc25005n kpbc25
Contextual Info: KPBC25005N-2510N SINGLE-PHASE BRIDGE RECTIFIER FEATURES
Low cost
This series is UL recognized under component index, file number E127707
High forward surge current capability
Integrally molded heatsink provide very low thermal resistance.
High isolation voltage from case to lugs.

Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

KBPC2510N

Abstract: Bridge rectifier BR 156 KBPC2505N 2501N 2502N 2504N 2506N kbpc2504N KBPC2505
Contextual Info: MASTER INSTRUMENT CORPORATION SINGLE-PHASE BRIDGE RECTIFIER KBPC2505N THRU KBPC2510N 50 to 1000 Volts 25 Amperes VOLTAGE RANGE CURRENT FEATURES l Low cost l This series is UL recognized under component index, file number E127707 l High forward surge current capability

2501NZ

Abstract: FDW2501NZ
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501NZ

Abstract: 2501NZ
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Fairchild MOSFET TSSOP-8 dual n-channel

Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

kbpc

Abstract: KBPC2510n
Contextual Info: MASTER INSTRUMENT CORPORATION SINGLE-PHASE BRIDGE RECTIFIER KBPC2505NW THRU KBPC2510NW 50 to 1000 Volts 25 Amperes VOLTAGE RANGE CURRENT FEATURES l Low cost l This series is UL recognized under component index, file number E127707 l High forward surge current capability

20-8O

Abstract: 2501N FDW2501N
Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

g2501

Abstract: siemens ferrite transformer B82791-H2601-N1 ferrite core transformer siemens matsushita ntba siemens B82791-G2501-N1 B82791-H2251-N20 B82791-H2701-N1 g2701 ntba
Contextual Info: EMC Components Chokes for Power Lines Current-Compensated Ring Core Double Chokes B82791-H/-G Data Book Supplement Power Line Chokes Current-Compensated Ring Core Double Chokes B82791-H/-G Rated voltage 250 V~ Rated current 0,25 to 0,7 A Rated inductance 4,7 bis 47 mH

2501N

Abstract: FDW2501N
Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

FDW2501NZ

Abstract: MOSFET TSSOP-8 2501NZ
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2501NZ

Abstract: 2502P CBHK741B019 F63TNR FDW2501NZ FDW2502P
Contextual Info: 2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

2513N

Abstract: ATT-0294-03-SMA-02
Contextual Info: QPL Attenuators - Fixed Coaxial MIL-A-3933/24 MILITARY PART NO. - 01 - 02 - 03 MIDWEST PART NO. M3933/24-01N M3933/24-02N M3933/24-03N DIMENSION A INCHES mm (max) 1.03 (26.2) 1.03 (26.2) 1.03 (26.2) ATTENUATION VALUE (dB (nom) 10 15 20 FREQUENCY RANGE (GHz)

2501N

Abstract: FDW2501N
Contextual Info: 2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

b 1403n

Contextual Info: QPL Fixed Coaxial Attenuators MIL-A-3933/14 M ILITA R Y PART NO. MIDW EST P A R T NO. DIMENSION A INCHES m m (m ax) ATTENU ATIO N V A LU E (dB ) (n o m ) FREQUENCY RANGE (GHz) C O M M ER CIAL A LTE R N A TE -01 -02 -03 -04 -05 M 3933/14-01N M3933/14-02N

ATT-0291

Abstract: ATT-0294-17-SMA-02 ATT-0294-01
Contextual Info: QPL Attenuators - Fixed Coaxial MIL-A-3933/24 SMA JACK —, .3 0 0 NOM OIA 7 .6 ' -.1 0 2 .2 8 0 NOM DIA ( 7 .1 ) .0 6 2 NOM ( 1. 6 ) DIA 4 PLCS ( 2 .6) .2 0 0 NOM (5 .1 ) .4 6 0 NOM ( 1 1 .7 ) 1 .0 3 0 NOM (2 6 .2 ) MILITARY PART NO. -01 -0 2 -0 3 MIDWEST