250NS Search Results

UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

Contextual Info: UM23V8001 1,048,576 X 8 BIT WIDE VOLTAGE RANGE CMOS MASK ROM Features • 1,048,576 x 8 bit organization ■ Wide power supply range: + 2.7V to +5.5V ■ Access times: 150ns m ax. /VCC = 5V 250ns (m ax.)/VCC = 3V ■ Current: Operating: 50mA (m ax.)/VCC = 5V

70N15

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

36N60

Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)

ic 4081 pin diagram

Abstract: 4081 analog switch ic 4082 teledyne philbrick converter Pin Diagram of ic 4081 teledyne converters Philbrick 4081 and ic 4082 16 pins TTL 4081
Contextual Info: £ TELEDYNE SäE COMPONENTS D m ùW bQ H QQQti 24Q 1 • 4080 Series T -5 1 -0 9 -1 2 12 Bit/250nsec Voltage Output D/A Converters The 4080 Series of 12 bit voltage-output D/A converters pro­ vide the ultimate in high speed, high performance digital to analog conversion. Fully three times faster than their nearest

74S04

Contextual Info: DELAY LINES. PULSE TRANSFORMERS & PULSE MODULES TO K O 74 Delay Line. Pulse Transformer and Pulse Module Applications T -1 Delay Lines i ^ — % j - < k 7 -r > RZT Type Features • TTL 74S04 Included. • Total Delay: 2 0 -250ns. • DIP 5 outputs. n

PF-210

Abstract: SPM27128C30 SPM27128H25
Contextual Info: PF210-02 SPM 27128H 25/3o NMOS 128K-BIT UV EPROM/OT PROM •A c c e s s Time 250ns/300n s • 1 6 ,3 8 4 Words X 8 Bits Asynchronous •S in g le 5V Supply •DESCRIPTION The SPM27128H25/30 is a 16,384 words x 8 bits ultraviolet erasable and electrically programmable ROM. This

vmos

Abstract: S4716 S4264 vmos to S68332 S4216B S6831B
Contextual Info: AMI ADVANCED PRODUCT DESCRIPTION S4716 16,384 BIT 2048 X 8 UV ERASABLE VMOS EPROM Features General Description □ Single + 5 Volt P ow er Supply □ F ast A ccess Time: 250ns Maximum □ Pin Compatible w ith AM I’s 16K, 32K and 64K ROMs □ Low Pow er D issipation

AM9101

Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
Contextual Info: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S

27512-3

Abstract: EPROM AM27256 AM27512 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064
Contextual Info: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available

IXFB100N50

Contextual Info: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

70n60

Abstract: IXFL70N60Q2
Contextual Info: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264

HT23C010

Contextual Info: HT23C010 CMOS 128K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)

HT23C128

Contextual Info: HT23C128 CMOS 16K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)

Contextual Info: XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns ■ Low CMOS Power Consumption — 30mA active max. — 100jjA standby (max.) A7 Ae Ab A* a3

Contextual Info: lowprofile t 2l COMPATIBLE MULTI 4 LOGIC DELAY LINE # T ^ L input and outputs # Delays stable and precise # 14-pin DIP package (.3 0 0 high) # Available in delays from 5 to 250ns — each isolated and with 10 T^L fan-out capacity # Four (4) separate isolated delay lines

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only High Speed CMOS ANALOG MULTIPLEXER FEATURES O o • HIGH SPEED 100ns Access Time 800ns Settling to 0.01% 250ns Settling to 0.1% • SELECTABLE TTL OR CMOS COMPATIBILITY • USER-PROGRAMMABLE 16-Channel Single-Ended or

Contextual Info: ICRTRLYST I S E M I C O N D U C T O R CAT28C65A/CAT28C65AI 64K-Bit CMOS E2PROM FEATURES • Fast Read A ccess T im es: 150/200/250ns ■ A u to m atic Pag e W rite O peratio n -1 to 32 B ytes in 10m s - P a g e Load T im e r ■ Low P o w er C M O S Dissipation:

G37 IC

Abstract: LT1216 G24.1215 power amplifier 88-108 LT1215
Contextual Info: LT1215/LT1216 23MHz, 50V/µs, Single Supply Dual and Quad Precision Op Amps U DESCRIPTIO • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Slew Rate 50V/µs Typ Gain-Bandwidth Product 23MHz Typ Fast Settling to 0.01% 2V Step to 200µV 250ns Typ 10V Step to 1mV

CD4011 PIN DIAGRAM

Abstract: cd4011 functional diagram explanation IH5052 IC cd4011 IH5053 ITATEL
Contextual Info: IH 5 0 5 2 /IH 5 0 5 3 CMOS Analog Gate» D IM Ü H ^D IL FEATURES • Switches Greater Than 20Vpp Signals With ±15V Supplies • Quiescent Current Less Than 10^A • Overvoltage Protection to ± 25V • Break-Before-Make Switching t 0ff 100nsec, to n 250nsec Typical

XL2804A-250

Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Contextual Info: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation

CDP1823

Contextual Info: h a r r is Œ CDP1823 d^P1 S E M I C O N D U C T O R 128-Word X 8-Bit LSI Static RAM M arch 1 9 9 2 Features Description • Fast Access Time - Vqq = 5 V .450ns - VDO= 1 0 V .250ns

AD562

Abstract: AD563 AD6012 DAC80 AD565 AD565A AD565AK AD566A buried zener
Contextual Info: General Purpose 12-IBit D/A Converters AD 565A Page S in g le C h ip C o n s tru c tio n V e ry H ig h S p e e d : S e ttle s to 1/2LSB in 250ns m a x F u ll S ca le S w itc h in g Tim e: 30ns H ig h S ta b ility B u rie d Zen er Referen ce O n C h ip M o n o to n ic ity G u a ra n te e d O v e r T em p e ra tu re

pin diagram of IC 1408

Abstract: ADI508 AD1408-7D 2SC 1508 AD1408
Contextual Info: 8 Bit Monolithic Multiplying 0/ A Converter FEATURES ImprovedRepl~C8m~ntfor Industry Standard 1408/1508 ImprovedSettling Time: 250ns typ ImprovedLinearity: :to.1% Accuracy GuaranteedOver TemperatureRange -9 Grade HighOutput Voltage Compliance: +O.5V to -5.0V