250HA Search Results

203PJLA250

Abstract: 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 250MA160
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

203PJLA250

Abstract: 250MA100 C 253PJA140 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 300LD
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

203PJLA250

Abstract: 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 250ma160
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

TT 46 N 800

Abstract: 203PJLA250 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 250ma160 PJ 0519
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

250DC15

Abstract: 203PJLA250 250FC15 250GC15 250JC15 250MA100 250MA80 TT 2200 300EXH21
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

300FXD13

Abstract: 203PJLA250 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 250MA160
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

iphone 4

Abstract: iphone i5 6N07 me 4435 4440 specifications ACMX Princeton Advanced Components
Contextual Info: 7^ PRINCETON ADVANCED <-fy-'/r3 12E D | 73fl0b44 0000015 S | DELAY MODULES, TTL, SURFACE MOUNTED 14 PIN Ntc I 3 OUT • PAC XXXX IN 2 4 • TTL and DTL compatible €» • No external components required 250HAX4 - 3 75 MAX h •"T" • Extremely Compact .230

250MA60

Abstract: 300FXD13 F1115 203PJLA250 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

251F4S

Abstract: 250ma160 203PJLA250 250DC15 250FC15 250GC15 250JC15 250MA100 250MA80 300FXD13
Contextual Info: 203PJLA250 250BC15 250DC15 250FC15 250GC15 250JC15 250LC15 250HA60 250MA80 250MA100 250MA120 250MA140 250MA160 250MA180 250MLAB160 250MLAB180 250MLAB200 250MLAB250 250NC15 251F2S 251F3S 251F4S 251P5S 251P6S 251F8S 251F10S 251F12S 251R2S 251R3S 251R4S 253PJA60

iphone 4

Abstract: iphone i5 me 4435 4431 8 PIN iphone 6N07 iphone 5 250HAX
Contextual Info: 7^ PRINCETON ADVANCED < - f y - ' / r3 12E D | 73fl0b44 0000015 S | DELAY MODULES, TTL, SURFACE MOUNTED 14 PIN Ntc I 3 OUT • PAC XXXX IN 2 4 • TTL and DTL compatible €» • No external components required 250HAX4 - 3 75 MAX h •"T" • Extremely Compact

Contextual Info: Temic Silicon»:_ S.9939DY D ual E nhancem ent-M ode M O SFETs N- and P-Channel Product Summary V d s (V) rDS(on) ( ß ) I d (A) 0.05 @ VGS = 10 V ±3.5 0.07 @ VGs = 6 V ±3 0.08 @ VGs = 4.5 V ±2.5 0.10 @ VGs = - ±3.5 30 iov 0.12 @ VGS = —6V

Contextual Info: Advanced IRFW/I530A Power MOSFET FEATURES BV DSS = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R Ds o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175 °c Operating Temperature

Contextual Info: IRF510A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V ■ Lower RDS(ON) : 0.289£l(Typ.)

Contextual Info: Advanced IRFR/U1 3 0 A Power MOSFET FEATURES B V DSS - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ^ D S o n = lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10 nA (Max.) @ V DS= 1 0 0 V

Contextual Info: Advanced SSP5N90A Power MOSFET FEATURES B V DSS - Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = 2 . 9 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V B Low Rds(0n) ■ 2.300 £1 (Typ.)

Contextual Info: Advanced SSH6N90A Power MOSFET FEATURES • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 2 . 3 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) CD Rugged Gate Oxide Technology

Contextual Info: IRFW/I610A Advanced Power MOSFET FEATURES BV DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n — ■ Lower Input Capacitance In = 3.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10HA(M ax.) @ V DS = 200V

Contextual Info: Advanced SSW/I4N90AS Power MOSFET FEATURES BV dss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n - ■ Lower Input Capacitance In = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

Contextual Info: IRFW/I640A Advanced Power MOSFET FEATURES BV DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on - 0.1 8 £2 In = 1 8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V

Contextual Info: IRLR/U024A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology = 0.075 Í2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 15 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V

Contextual Info: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■

Contextual Info: Advanced SSF9N80A Power MOSFET FEATURES - 800 V ^ D S o n = 1.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.000 £1 (Typ.) CD

Contextual Info: SSH8N90A Power MOSFET FEATURES - 900 V ^ D S o n = 1.6 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o II ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

Contextual Info: IRFM110A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 100 V ^ D S o n = 0 .4 Î2 1 -5 A lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 H A (M a x .) @ V DS= 1 0 0 V