Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    71B4142 Search Results

    71B4142 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns


    OCR Scan     		PDF 71b4142 0Q151b4 KMM5362000B/BG 110ns 5362000B-7 130ns KMM5362000B-8 150ns KMM5362000B-6 cycles/16ms

    SOT-23 MARKING T31

    Abstract: SOT23s KSR1111 KSR2111
    Text: SAMSUNG SE MI CON DUC TO R INC KSR2111 IME 0 £ 71b4142 0007131 b J PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION T~2>n- 1 3 Blas Resistor Bullt In • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In trias Resistor (R=22Kß)


    OCR Scan     		PDF 71b4145 KSR2111 22Kll) KSR1111 T-31- OT-23 Collector23 100/iA, --10V, SOT-23 MARKING T31 SOT23s KSR1111

    BC103C

    Abstract: bc 103
    Text: SAMSUNG SEMICONDUCTOR INC 02 KS54HCTLS j2 ß § KS74HCTLS DE | 71b4142 □□Ob4bT S | ” Dual Pof-4 Data Selectors/Multiplexers Sele with 3-State Outputs -<3 / —y l FEATURES DESCRIPTION • • • • Each of these data selectors/multiplexers contains inverters


    OCR Scan     		PDF 71b4142 KS54HCTLS KS74HCTLS 7Tb414S 90-XO 14-Pin BC103C bc 103

    28C64C

    Abstract: KM28C64
    Text: SAM S UN G E L E C T R O N I C S INC 4EE D 71b4142 G011QS3 T CMOS EEPROM KM28C64/KM28C65 'T M L a ^ - Z T ] 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • O perating Tem perature Range Th e K M 28 C 64 /C 6 5 is a 8 ,1 9 2 x 8 bit E le c tric ally Eras­


    OCR Scan     		PDF 71b4142 G011QS3 KM28C64/KM28C65 64I/K 32-byte 150fts/byte 200ns 100jiA 28C64C KM28C64

    KSA1175

    Abstract: KSC2785
    Text: SAMSUNG SEMICONDUCTOR INC KSC2785 IME D | 71b4142 OOOtìbE 0 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9-1 7 AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSG. TO-92S • Complement to KSA1175 • Collector-Base Voltage Vcso=60V • High Current Gain Bandwidth Product fT=300M H z ffyp


    OCR Scan     		PDF KSC2785 KSA1175 300MHz T-29-17 O-92S -h-20 KSA1175

    34S71

    Abstract: 005D C1005D
    Text: K M 4 4 C 1 005 DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


    OCR Scan     		PDF KM44C KM44C1005DJ 003427b 34S71 005D C1005D

    32Kx32 Synchronous

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.


    OCR Scan     		PDF KM732V599A/L 32Kx32 32Kx32 Synchronous

    ka7309

    Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
    Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE


    OCR Scan     		PDF KS7214 KS7214 48-QFP-0707 37T37 71b4142 48-QFP-0707 ka7309 TI 81W CAMERA 803 CMOS sync timing generator T3D 77 78235 T3D 91 oil temperature sensor generator

    IRFIZ44

    Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
    Text: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFWZ44/40 IRFIZ44/40 IRFWZ44/IZ44 IRFWZ40/IZ40 IRFWZ44 IRFIZ44 IRFWZ40 IRFIZ40 LS50A

    D0233

    Abstract: 250JUA 250M IRFS340 IRFS341 Tj-25DC
    Text: N-CHANNEL POWER MOSFETS IRFS340/341 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS340/341 IRFS340 IRFS341 71b4142 2ti35ti D0233 250JUA 250M Tj-25DC

    Untitled

    Abstract: No abstract text available
    Text: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V


    OCR Scan     		PDF SSP1N60A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    DD313

    Abstract: No abstract text available
    Text: IRLW/I620A Advanced Power MOSFET FEATURES M • ■ ■ ■ ■ ■ ■ B V Dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10nA Max. @ VOS= 200V


    OCR Scan     		PDF IRLW/I620A 100oC) 71b4142 003133b DD313

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8


    OCR Scan     		PDF KM48V512A/AL/ALL KM48V512A/AL/ALL-7 130ns KM48V512A/AL/ALL-8 150ns cycle/16ms cycle/128ms cycle/128mLA 28-LEAD 71b4142

    Untitled

    Abstract: No abstract text available
    Text: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package


    OCR Scan     		PDF KM48C8004AS KM48C8004A 16Mx4, 512Kx8) 48C8004AS G03S50b 71L4142

    Untitled

    Abstract: No abstract text available
    Text: KS0093 26 COM / 80 SEG DRIVER & CONTROLLER FOR STN LCD MARCH. 1999. • 7 ^ 4 1 4 2 □□SA'na T71 i 26COM/8QSEG DRIVER & CONTROLLER FOR STN LCD KS0093 KS0093 Specification Revision History Content Version Date 0.0 Original 1998. 06 0.1 Miss typed contents changed


    OCR Scan     		PDF KS0093 26COM/8QSEG KS0093 71b4142

    Untitled

    Abstract: No abstract text available
    Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.


    OCR Scan     		PDF KS7306 KS7306 100-QFP-1414 25ZT1 03125Z VID-97-D004

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


    OCR Scan     		PDF MPSA55 71fc4142 T-29-21 625mW

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.


    OCR Scan     		PDF KM44C1000AL KM44C1OOOAL 130ns OOOAL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KS7212 TIMING & SYNC. GENERATOR FOR B/W CCD GENERAL DESCRIPTION The KS7212 is a CMOS integrated circuit designed for making various timing pulses for B/W CCD camera. FEATURES - Compatible with both EIA and CCIR mode EIA: KC73125(U -M, CCIR : KC73129(U)-M)


    OCR Scan     		PDF KS7212 KS7212 KC73125 KC73129 06992MHz, 93750MHz 48-QFP-0707 GG37fl4M

    Untitled

    Abstract: No abstract text available
    Text: The information in this data sheet can change upon complete cajaracterization and evaluation Of this new product. I f n A f\A Q A Iv U /W J ^ rO ^ » 110 M H z C M O S T r u e - C o lo r R A M D A C KDA0484 FEATURES ♦ 110,85MHz Pixel Clock ♦ 8 :1 , 4:1, 2:1,1:1 MUX Modes


    OCR Scan     		PDF KDA0484 85MHz 32x32x2 256x8 KDA0484. KDA0484 KDA0484L-110 110MHz 84-PLCC-SQ

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high


    OCR Scan     		PDF KM732V596A/L 32Kx32 732V596A/L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating KM68257B-15 : 150mA (max.) KM68257B-20: 140mA (max.) KM68257B-25: 130mA (max.)


    OCR Scan     		PDF KM68257B KM68257B-15 150mA KM68257B-20: 140mA KM68257B-25: 130mA KM68257BP: 28-DIP-300 KM68257BJ

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


    OCR Scan     		PDF KM44C4003BS D344bfl

    Z812

    Abstract: No abstract text available
    Text: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.)


    OCR Scan     		PDF KM6164002/L KM6164002-20 250mA KM6164002-25 240mA KM6164002-35 220mA KM684002J/U 44-SOJ-400 Z812