250LIA Search Results

tc258c

Contextual Info: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.

IF8A

Abstract: 16812
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 “ “ TO SH IB A 99D <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR FIELD 16812 EFFECT D T -3 9 -1 3 TRANSISTOR Y T F *4 4 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSH H I G H SPEED, H I G H C U R R E N T S W I T C H I N G A P P L I CATIONS.

Contextual Info: 2N7007 Çf S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FET BVDss / ^DS O N) b v dos (max) 240V 45ÌÌ ÎI Ordering Information Order Number / Package TO-92 150mA 2N7007 Features Advanced DMOS Technology !J Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: TOSHIBA DISCRETE/OPTO 45E D TO S H IB A F IE L D E F F E C T TR A N S IS TO R SILICON N C H A N N EL MOS T Y P E (tt - • ^017250 □DlT'ibfl 1 «TO S H -YTFP151 MOSI) ' P i - ß INDUSTRIAL APPLICATIONS Unit in HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

IRFPF50

Abstract: 67a regulator
Contextual Info: P D -9 .5 4 2 B International IRFPF50 [^ R e c tifie r HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 900V ^DS on = 1

IN25A

Contextual Info: TOSHIBA {DIS CR ETE/O PT O} T i DE^iQ^ESG 99D 16784 9097250 TOSHIBA CDISCRETE/OPTO TO SH IBA SEMICONDUCTOR F IE L D EFFEC T DT-3^I I TRA N SISTO R Y T F 2 2 2 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E 7T-H0SI) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •

irf9640n

Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Contextual Info: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A

Contextual Info: UCC1919 UCC2919 UCC3919 UNITRODE PRELIMINARY 3V to 8V Hot Swap Power Manager FEATURES DESCRIPTION • Precision Fault Threshold The UCC3919 family of Hot Swap Power Managers provide complete power management, hot swap, and fault handling capability. The UCC3919 features a duty ratio current limiting technique, which pro­

Contextual Info: YTF611 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH INDUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. C HOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03 .6ÍO .2 DRIVE APPLICATIONS. . L o w D r a i n -Source ON Resistance

Contextual Info: International tor Rectifier • HEXFET Power MOSFET INTERNATIONAL R E C T I F I E R • • • • • • • 4 6 5 5 4 5 2 0 0 1 4 6 4 6 650 ■ INR ru-y.yio _ IRF9530S b5E D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated

IRL520

Abstract: 027Q 561C
Contextual Info: PD-9.561C International S Rectifier IRL520 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive VDSS=100V • RDS on S pecified a t V g s =4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling

IRL510

Abstract: MARKING sih
Contextual Info: International S Rectifier PD-9.560C IRL510 HEXFET Power MOSFET • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS on Specified at Vgs=4V & 5V • 175°C Operating Temperature • Fast Switching • Ease of Paralleling

2N7002 MARKING 712

Abstract: 2N7002 800mA SOT-23 Marking code MU
Contextual Info: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

gti TRANSISTOR

Abstract: 16838
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 TO SHIBA T=¡ D ISCR ETE/O P TO 99D TOSHIBA SEMICONDUCTOR postuliti FIELD SILICON EFFECT N CHANNEL . Low Leakage Current : I(;ss= ± 50ChA(Max.) ^J *< • * rt X< a M * 1 (Typ.) @ Vgg=±20V IpSS” 250uA(Max.)

1RFZ24

Abstract: smd WV1 smd diode marking 1Ss 6ct smd AN-994 IRFZ24 IRFZ24S SMD-220 smd diode WV1 smd WV1 15
Contextual Info: PD-9.594A International jgg Rectifier IRFZ24 HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V p ss - 60 V R DS on = 0 .1 0 0 lD = 1 7 A Description