250MJ Search Results

Contextual Info: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description  SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

IGBT DRIVER ignition coil automotive

Abstract: igbt ignition automotive ignition coil on plug automotive ignition ignition coil IGBT advance ignition automotive ignition coil ignition driver ignition switch on coil smart igbt ignition coil
Contextual Info: ISL9V2540S3ST EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

2SK2960

Contextual Info: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm

IGBT DRIVER ignition coil automotive

Abstract: V2540S igbt spice automotive ignition automotive ignition coil ignition igbt ISL9V2540S3S ISL9V2540S3ST advance ignition igbt ignition
Contextual Info: ISL9V2540S3S EcoSPARKTM N-Channel Ignition IGBT 250mJ, 400V General Description Features o ! SCIS Energy = 250mJ at TJ = 25 C ! Logic Level Gate Drive Applications ! Automotive Ignition Coil Driver Circuits ! Coil - On Plug Applications Package The ISL9V2540S3S is a next generation ignition IGBT that

V2540S

Abstract: IGBT DRIVER ignition coil automotive 5482E automotive ignition coil ISL9V2540S3S ISL9V2540S3ST igbt spice ignition spice smart ignition igbt
Contextual Info: ISL9V2540S3ST EcoSPARK N-Channel Ignition IGBT 250mJ, 400V Features General Description ! SCIS Energy = 250mJ at TJ = 25oC The ISL9V2540S3ST is a next generation ignition IGBT that offers outstanding SCIS capability in the industry standard D²-Pak TO-263 plastic package. This device is intended

2SK2960

Contextual Info: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 ● Contactless relay

Contextual Info: Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 250mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 55ns ● No secondary breakdown unit: mm 4.6±0.2 15.0±0.3 ■ Applications

MP-25

Abstract: NP82N06CLC NP82N06DLC NP82N06ELC
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

30v 28a mosfet

Abstract: 2N7218U IRF140SMD IRFN140
Contextual Info: IRFN140 2N7218U SEME LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

transistor 5586

Abstract: IRFN3710
Contextual Info: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

2N7218

Abstract: IRFM140 LE17
Contextual Info: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

Contextual Info: IRFN3710 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

Contextual Info: im SEM E IRF140 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 100 V V DSS 28A ID(cont) 0.077Q ^D S (on) FEATURES • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ 18.80 (0.740) ^ dia. ! • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

Contextual Info: IRF140 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)

IRFN140SMD

Contextual Info: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: SEME IRFN140SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: S EM E IRF140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS on MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: Illl W . mi SEME IRFN140 LAB MECHANICAL DATA Dim ensions in mm inches N-CHANNEL POWER MOSFET 11.5 100 V 13.9A 0.077Q V DSS 0.25 I D(cont) 3.0 ^D S (on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

IRF140SM

Contextual Info: SEME IRF140SM LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 100V 13.9A 0.077W FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 1.5 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Contextual Info: im s ffs n il IRFN140 SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11 s 100 V V Dss 0.25 13.9A ^D(cont) 3.0 r*-H 0 .077G R DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: im i ^ i mi IRF140SM SEME LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 100V 13.9A 0.07712 V DSS 0.25 I D(cont) 3.0 ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

Contextual Info: S EM E IRFN140SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )