250V TRANSISTOR NPN 2A Search Results

250V TRANSISTOR NPN 2A Result Highlights (5)

Part	Manufacturer	Description
MG250V2YMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 1700 V, 250 A, 2-153A1A
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

250V TRANSISTOR NPN 2A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE2543 Contextual Info: NTE2543 Silicon NPN Transistor Darlington, Motor/Relay Driver Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V	Original	NTE2543 NTE2543	PDF
NTE95 Contextual Info: NTE95 Silicon NPN Transistor High Voltage, High Power Switch Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V	Original	NTE95 10-32-UNF-2A NTE95	PDF
2SD1410 Abstract: B-35 transistor 300V transistor npn 2a darlington power transistor HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 250V transistor npn 2a NPN Transistor 5V DARLINGTON power darlington npn transistor NPN Darlington 300V 2A transistor npn 2a "switching applications" Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain	Original	2SD1410 2SD1410 B-35 transistor 300V transistor npn 2a darlington power transistor HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 250V transistor npn 2a NPN Transistor 5V DARLINGTON power darlington npn transistor NPN Darlington 300V 2A transistor npn 2a "switching applications"	PDF
samsung tv Abstract: T337 KSC1520 KSC1983 TO-202 transistor NPN I44A Contextual Info: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME 0 \| V 'lb m ia 0007S40 1 \| NPN EPITAXIAL SILICON TRANSISTOR r - 3 3 - COLOR TV CHROMA OUTPUT 7 TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	0007S40 KSC1520 80MHz O-202 100/iA, 3K5K10K samsung tv T337 KSC1983 TO-202 transistor NPN I44A	PDF
TSC5302DCH Abstract: TSC5302DCP DIODE G14 Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH DIODE G14	PDF
IRF9210 Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF	OCR Scan	2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1	PDF
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH	PDF
diode D07-15 Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH diode D07-15 diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V	PDF
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH TSC53rty	PDF
700VV Abstract: TSC5302D halogen ballast 18BSC TSC5302DCH TSC5302DCP diode marking code 540 transistor B 540 Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH 700VV TSC5302D halogen ballast 18BSC diode marking code 540 transistor B 540	PDF
DIODE F10 Abstract: transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation	Original	TSC5302D O-251 O-252 DIODE F10 transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP	PDF
ELECTRONIC BALLAST 12v Abstract: FJP5304D TRANSISTOR hFE-100 Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time	Original	FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100	PDF
Contextual Info: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for ElectronicBallast Application Small Variance in Storage Time	Original	FJP5304D O-220 FJP5304D	PDF
Contextual Info: SGS-THOMSON 5 HiSiniMOtgS rz 7 ^ 7# SGSF665 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR . HIG H S W IT C H IN G 'SPEED NPN POW ER TRANSISTOR • HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS . 50kHz SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS	OCR Scan	SGSF665 100kHz	PDF

Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings	Original	FJB3307D	PDF
12V RELAY 5 PIN DIAGRAM spdt Abstract: SP12SELQD SP12SRLQD relay socket lr38486 LR38486 5 pin 12v relay pin drawing diagrams schematic AC inductive proximity sensor inductive proximity sensor transistor schematic AP12SR SP12 PACKAGE TYPE 6 Contextual Info: t ns uc tio od ca Pr ne ifi Li pec S MAXI-AMP System Stand-alone sensor control modules • Versatile, cost-effective sensor control modules: models available for use with most Banner photoelectric sensors • Power supply, photoelectric amplifier CD and CM	Original		PDF
Contextual Info: c2\£.w J. nc. tU TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA. Silicon NPN Power Transistor BUY56 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=160V(Min.) • Low Collector Saturation Voltage:V CE (sat)=1.5V@lc=7A	Original	BUY56	PDF
Contextual Info: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated	Original	NTE385 NTE385	PDF
Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B 1 D2-PAK 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings	Original	FJB3307D	PDF
FJE5304D Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126	PDF
transistor 12v 1A NPN Abstract: fje5 Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 transistor 12v 1A NPN fje5	PDF
darlington NPN 600V 8a transistor Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output	Original	NTE256 NTE256 darlington NPN 600V 8a transistor npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V	PDF
FJB3307D Abstract: QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat Contextual Info: FJB3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram C B D2-PAK 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings	Original	FJB3307D FJB3307D QS 100 NPN Transistor transistor Electronic ballast electronic ballast circuit US Global Sat	PDF
j5304d Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application	Original	FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o	PDF

250V TRANSISTOR NPN 2A Search Results

250V TRANSISTOR NPN 2A Result Highlights (5)

250V TRANSISTOR NPN 2A Datasheets Context Search

NTE2543

NTE95

2SD1410

samsung tv

TSC5302DCH

IRF9210

diode D07-15

700VV

DIODE F10

ELECTRONIC BALLAST 12v

12V RELAY 5 PIN DIAGRAM spdt

FJE5304D

transistor 12v 1A NPN

darlington NPN 600V 8a transistor

FJB3307D

j5304d