256K16 Search Results

Contextual Info: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e

Contextual Info: C3 256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized as256Kx16

Contextual Info: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n

Contextual Info: a W 256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range

TBA 129-5

Abstract: WMS256K16L-XXX WMS256K16-XXX
Contextual Info: White Electronic Designs 256K16-XXX 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ PIN CONFIGURATION FOR 256K16-XXX 44 CSOJ Packaging 44 FlatpacK • 44 pin Ceramic SOJ Package 102

Contextual Info: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation

AS4C256K16F0-60JC

Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Contextual Info: WÊ High Performance 256Kxl6 CMOS DRAM 256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed

as4c256k16eo

Abstract: 256KX16 AS4C256K16E0 LO301
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed

Contextual Info: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)

Contextual Info: t t W 256K16-XDLX WHITE / M I C R O E L E C T R O N I C S 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 pending PRELIMINARY * FEATURES • Access Times 17, 20, 25, 35nS Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Com pliant Devices A vaila b le 2V M inim um Data Retention for battery back up operation

Contextual Info: 77 256K16-XXX M/HITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns Data I/O C o m p a tib le w it h 3.3V devices ■ 2 V M in im u m Data R etention fo r b a tte ry back up o pe ra tio n M IL-STD -883 C o m p lia n t Devices A v a ila b le

PG-FP5 Flash Memory Programmer

Abstract: 100 pin wqfn V850 Dual Voltage Flash JC3-L JH3-E P910 V850ES V850ES/jg3-L v850es/jg3-l NEC V850ES/JJ3
Contextual Info: V850ES/Jx3 V850ES/Jx3 LPC LPC Low (Low Pin Pin Count Count) Series Series V850ES/Jx3-H, V850ES/Jx3-L, V850ES/Jx3-E 32 bit Single-chip Microcontrollers Feature V850ES/Jx3-L Industry-Leading Low power consumption Ideal for Battery-Driven Systems Low power & Low voltage

Contextual Info: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

AS4LC256K16EO

Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Contextual Info: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time

AS4C256K16FO

Abstract: AS4C256K16FO-60
Contextual Info: 256K16FO 5V 256K X 16 CMOS DRAM Fast Page Mode Features • Organization: 262,144 words x 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption

WMS256K16L-XXX

Abstract: WMS256K16-XXX
Contextual Info: 256K16-XXX HI-RELIABILITY PRODUCT 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging •44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Flatpack (Package 225)

First line 7aa ed tms 3874 9v voltage regulator

Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
Contextual Info: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target

Contextual Info: EDI816256CA-XM44XG 256K16X-XLJXG 256Kx16 PLASTIC SRAM PLASTIC PLUS FEATURES  Access Times of 15, 17, 20, 25ns  Center Power/Ground Pins Revolutionary  Standard Commercial Off-The-Shelf (COTS) Memory Devices for Extended Temperature Range

AS4LC256K16EO

Contextual Info: 256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time

Contextual Info: TT M/HITE M I C R O E L E C T R O N I C S W M S2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Tim es 17, 20, 25, 35ns D ata I/O C om patible w ith 3.3V devices ■ M IL-S TD -883 C om p lian t Devices A v a ila b le 2V M in im u m Data R ete ntion fo r b a tte ry back up operatio n

Building Management System

Abstract: V850ES PG-FP5 Flash Memory Programmer PD70F3813K8-4B4-AX
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

pe-68508

Abstract: d725 B32AD PE 68508 r1049 HAD30 68508 C3210 HAD20 8251 eeprom
Contextual Info: A 156 157 208 68, 15, 77, 20, 85, 30, 93 52 B DAN JEFF C APPROVALS DRAWN SCOTT 303 543-2029 CHECKED ENGINEER MULLIN B SIZE SCALE: VSS 66MHZ 7 1 DATE ROCKWELL CODE IDENT NONE +3V San Diego, NO. LOVELAND/PEAK7 DRAWING D CA 8-19-1998_14:30 SHEET SEMICONDUCTOR

Contextual Info: January 2001 Advance Information 256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh