256K16E0 Search Results

Contextual Info: Preliminary information •■ A S 4 L C 2 5 6 k l6 E 0 II 3.3V 2 5 6 k X 16 CMOS DRAM EDO Features • O rganization: 262,144 w ords x 16 bits • H igh speed - 3 5 /4 5 /6 0 ns RAS access tim e - 1 7 /2 0 /2 5 ns colum n address access tim e - 7 / 1 0 /1 0 ns CAS access tim e

as4c256k16eo

Abstract: 256KX16 AS4C256K16E0 LO301
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed

Contextual Info: $6/&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 35/45/60 ns RAS access time - 17/20/25 ns column address access time - 7/10/10 ns CAS access time • Low power consumption - Active: 280 mW max (256K16E0-35)

Contextual Info: 256K16E0 A 3.3V 2 5 6 K X 16 CMOS DRAM EDO Features • 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh • Organization: 262,144 w ords x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns K K access tim e

YH 13001

Abstract: SP 13001
Contextual Info: Advance information •■ A S4V 256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h

AS4LC256K16EO

Abstract: AS4LC256K16EO-35 AS4LC256K16E0-35JC RAS-28
Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - 45/60 ns RAS access time - 10/12/15/20 ns column address access time

AS4LC256K16EO

Contextual Info: AS4LC256K16EO 3.3V 256K X 16 CMOS DRAM EDO Features • 5V I/O tolerant • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh - 45/50/60 ns RAS access time

Contextual Info: January 2001 Advance Information AS4VC256K16EO 2.5V 256K X 16 CMOS DRAM EDO Features • EDO page mode • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words x 16 bits • High speed - RAS-only or CAS-before-RAS refresh or self refresh

AS4C256K16E0-50JC

Contextual Info: $6&.  9.ð&026'5$0 ('2 HDWXUHV • Organization: 262,144 words x 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)

AS4C256K16E0-45JC

Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l

AS4C256K16E0

Abstract: AS4C256K16E0-35JC
Contextual Info: 256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)

AS4C256K16E0-60JC

Abstract: as4c256k16eo 12 SQ 045 JF 256KX16 AS4C256K16E0
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CMOS DRAM gg A S4C 256K 16E 0 II H iah speed 2 5 6 K x l6 CMOS DRAM EDO Preliminary information Features • 5 1 2 r e f r e s h c y c le s, 8 m s r e f r e s h in te rv a l • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its

Contextual Info: Preliminary information • 5 1 2 re fre s h cycles, 8 m s re fre s h in terv al - RAS-only o r CAS-before-RAS refresh • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I / O • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its

6k16e

Abstract: TEA II04 256KX16 AS4LC256K16E0 AS4LC256K16E0-35JC
Contextual Info: Preliminary information •■ A 256K16E0 1 3.3V 2 5 6 K X 16 C M O S DRAM EDO Features • 5 1 2 re fre s h c y c le s, 8 m s re fre s h in te rv a l - R A S -only o r C A S-before-RA S re fre s h o r se lf re fre s h • R e a d -m o d ify -w rite

Contextual Info: 256K16E0 5V 256Kx16 CMOS DRAM EDO Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (256K16E0-25)

Contextual Info: Preliminary information •■ 256K16E0 II 3.3V 256KX16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 3 5 / 4 5 / 6 0 ns RAS access tim e - 1 7 / 2 0 /2 5 ns c o lu m n address access tim e - 7 / 1 0 / 1 0 ns CAS access tim e

PA 13001

Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
Contextual Info: Advance information •■ 256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e