K6X4016C3F
Abstract: K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q
Text: CMOS SRAM K6X4016C3F Family Document Title 256Kx16 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 26, 2002 Preliminary 0.1 Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type.
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K6X4016C3F
256Kx16
44-TSOP2-400R
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
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K6F4016U6G-EF70
Abstract: K6F4016U6G K6F4016U6G-F K6F4016U6GE
Text: Preliminary CMOS SRAM K6F4016U6G Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark June 11, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F4016U6G
256Kx16
55/Typ.
35/Typ.
K6F4016U6G-EF70
K6F4016U6G-F
K6F4016U6GE
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da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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Untitled
Abstract: No abstract text available
Text: EDI816256CA 256Kx16 MONOLITHIC SRAM, SMD 5962-96795 FEATURES 256Kx16 bit CMOS Static The EDI816256CA is a 4 megabit Monolithic CMOS Static RAM. Random Access Memory The EDI816256CA uses 16 common input and output lines and has an output enable pin which operates faster than address access
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EDI816256CA
256Kx16
EDI816256CA
MIL-STD-883
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SAMSUNG MCP
Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary
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K5A3x40YT
4Mx8/2Mx16)
512Kx8/256Kx16)
512tRDR
69-Ball
08MAX
SAMSUNG MCP
samsung K5 MCP
BA35
BA4110
ba4410
BA651
Flash Memory SAMSUNG k5
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K6T4016C3B-TB70
Abstract: K6T4016C3B-B
Text: CMOS SRAM K6T4016C3B Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary 1.0 Finalize December 17, 1996
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K6T4016C3B
256Kx16
15/75mA
130mA
100pF
K6T4016C3B-TB70
K6T4016C3B-B
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Untitled
Abstract: No abstract text available
Text: IC62LV25616L IC62LV25616LL Document Title 256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM Revision History Revision No History Draft Date Remark 0A Initial Draft May 1,2001 Preliminary 0B 1. Change for tPWE: 45 to 40 ns for 55 ns product August 21,2001
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IC62LV25616L
IC62LV25616LL
256Kx16
1LV25616LL-55TI
IC62LV25616LL-55BI
IC62LV25616LL-70T
IC62LV25616LL-70B
IC62LV25616LL-70TI
IC62LV25616LL-70BI
IC62LV25616LL-100T
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HYUF6404D
Abstract: HYUF6404
Text: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02
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HY62UF16404D
256Kx16bit
HYUF6404D
HYUF6404D
HYUF6404
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k6t4016c3c-tf70
Abstract: K6T4016C3C-TB70 K6T4016C3C-TB55 K6T4016C3C April 1999
Text: CMOS SRAM K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1998 Preliminary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6T4016C3C
256Kx16
k6t4016c3c-tf70
K6T4016C3C-TB70
K6T4016C3C-TB55
April 1999
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Untitled
Abstract: No abstract text available
Text: K6F4016S6D Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 16, 2000 Preliminary 1.0 Finalized April 20, 2000 Final Errata correction
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K6F4016S6D
256Kx16
85/Typ.
25/Typ.
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Untitled
Abstract: No abstract text available
Text: HY62UF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values
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HY62UF16406C
256Kx16bit
16bits.
HYUF6406C
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Untitled
Abstract: No abstract text available
Text: K6T4016U6C Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History 0.0 0.01 1.0 Draft Date Remark Initial draft Errata correction July 4, 1998 August 17, 1998 Preliminary Finalize - Specified CSP type.
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K6T4016U6C
256Kx16
25/Typ.
45/Typ.
68/Typ.
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Untitled
Abstract: No abstract text available
Text: HY62LF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values
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HY62LF16406C
256Kx16bit
HYQF6406C
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HY514264
Abstract: No abstract text available
Text: •HYUNDAI HY514264B 256Kx16, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60
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HY514264B
256Kx16,
16-bit
40-pin
400mil)
16-bits
256Kx16
HY514264
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Scans-0012741
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM616V4002B/BL, KM616V4002BI/BLI Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0
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KM616V4002B/BL,
KM616V4002BI/BLI
256Kx16
KM616V4002BI/BLI
44-SOJ-400
44-TSO
P2-400F
Scans-0012741
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Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
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AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
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Untitled
Abstract: No abstract text available
Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted
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EDI8F16256C
256Kx16
EDI8F16256C
4096K-bit
256Kx4
a256Kx16,
512Kx8
1024Kx4
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BQ4025
Abstract: bq4025Y
Text: h bq4025/bq4025Y BENCHMARQ 256Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 words by 16 bits. The in te g ra l co n tro l c irc u itry an d
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bq4025/bq4025Y
256Kx16
bq4025
304-bit
40-pin
bq4025
bq4025Y
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BQ4025
Abstract: bq4025Y
Text: bq4025/bq4025Y BENCHMARQ 256KX16 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4025 is a nonvolatile 4,194,304-bit static RAM organized as 262,144 w ords by 16 b its . The integral control circuitry and lithium
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bq4025/bq4025Y
256KX16
bq4025
304-bit
D0037CH
bq4025Y
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Untitled
Abstract: No abstract text available
Text: TT WHITE M IC R O E LEC TR O N IC S 256Kx16 SRAM 3.3V W PS256K16V-XU X ADVANCED* PLASTIC PLUS FEATURES • Access Tim es of 15,17, 20ns PIN CONFIGURATION TOP VIEW AO c 1 A1 c 2 A2 c 3 A3 c 4 A4 c 5 ■ Standard Commercial Off-The-Shelf COTS M em ory Devices fo r Extended Tem perature Range
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PS256K16V-XU
256Kx16
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Untitled
Abstract: No abstract text available
Text: C3 WMS256K16-XXX WHITE MICROELECTRONICS 256KX16 M O NO LITHIC SRAM FEATURES • Access Times 17, 20, 25, 35ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging • 44 pin Ceramic SOJ Package 102 • 44 lead Ceramic Ratpack (Package 208) ■ Organized 256Kx16
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WMS256K16-XXX
256KX16
MIL-STD-883
as256Kx16
l/Cte-16
Ao-17
256K16
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Untitled
Abstract: No abstract text available
Text: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess T im e s 17, 20, 25, 35ns D ata I/O C o m p a tib le w ith 3.3 V devices ■ M IL-S T D -883 C o m p lia n t D evices A v a ila b le 2V M in im u m D ata R ete n tio n fo r b a tte ry back up o p e ra tio n
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MS256K16-XXX
256Kx16
256Kx16
02HMX
03HMX
01HNX
02HIMX
03HNX
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Untitled
Abstract: No abstract text available
Text: a W MS256K16-XXX WHITE /MICROELECTRONICS 256Kx16 MONOLITHIC SRAM , SM D 5962-96902 FEATURES • A ccess Tim es 17, 20, 25, 35ns ■ 2V M in im u m Data R etention fo r b a tte ry back up operation ■ M IL-S TD -883 C o m p lia n t Devices A v a ila b le ■ C om m ercial, Industrial and M i lita r y T e m p e ra tu re Range
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MS256K16-XXX
256Kx16
256Kx16
WMS256K16-XXX
AO-17
02HMX
03HMX
01HNX
02HIMX
03HNX
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Untitled
Abstract: No abstract text available
Text: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip
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EDI8M16256C
256Kx16
EDI8M16256C
4096K
256Kx16bit)
EDI81256C
256Kx1)
EDI816H64C
1024K
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