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    25CNE8N Search Results

    25CNE8N Datasheets Context Search

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    IEC61249-2-21

    Abstract: IPP26CNE8N 25CNE8N
    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N PDF

    IPP26CNE8N

    Abstract: d35 marking marking d35 25CNE8N
    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N d35 marking marking d35 25CNE8N PDF

    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N PDF

    IPP26CNE8N

    Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220
    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 PDF

    IPP26CNE8N

    Abstract: ATO-251
    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N ATO-251 PDF

    DD40

    Contextual Info: IPB26CNE8N G 25CNE8N G IPI26CNE8N G IPP26CNE8N G 25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N DD40 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF