25OC2 Search Results
25OC2 Datasheets Context Search
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TAN15Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor |
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TAN15 TAN15 25oC2 | |
1035 transistor
Abstract: M.P transistor
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25oC2 1035 transistor M.P transistor | |
55ay
Abstract: DME150
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25oC2 DME150 55ay DME150 | |
TAN300Contextual Info: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven |
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25oC2 TAN300 TAN300 | |
700 v power transistorContextual Info: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The |
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25oC2 700 v power transistor | |
Contextual Info: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven |
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25oC2 1750akdown | |
M112
Abstract: MS2473
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MS2473 MS2473 1090MHz 25oC2 150oC 200oC M112 | |
tpr1000
Abstract: high frequency transistor
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25oC2 tpr1000 high frequency transistor | |
JTDB75Contextual Info: JTDB 75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven |
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25oC2 JTDB75 | |
1075MPContextual Info: 1075MP 75 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1075MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for |
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1075MP 55FW-1 1075MP 25oC2 | |
TCS450Contextual Info: TCS450 450 Watts, 45 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The TCS450 s a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold |
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TCS450 TCS450 25oC2 | |
Contextual Info: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The |
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transistor DF 50Contextual Info: DMEG 250 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The DMEG 250 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The |
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25oC2 transistor DF 50 | |
j329
Abstract: J3-29 duroid 5880 20AWG TPR400A J251
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TPR400A TPR400A 25oC2 150oC 200oC 20AWG, 10mils j329 J3-29 duroid 5880 20AWG J251 | |
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TRANSISTOR Z4
Abstract: Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces
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25oC2 100mil) 68mfd, TRANSISTOR Z4 Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces | |
1015 TRANSISTOR DATASHEET
Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
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25oC2 1015 TRANSISTOR DATASHEET transistor 1015 transistor a 1015 1015 TRANSISTOR | |
TAN75AContextual Info: TAN75A 75 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN75A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven |
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TAN75A TAN75A 25oC2 | |
df transistor
Abstract: 55KT
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25oC2 1750ower df transistor 55KT | |
Contextual Info: DMEG 250 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The DMEG 250 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The |
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Contextual Info: 1090MP 90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for |
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1090MP 55FW-1 1090MP 25oC2 | |
Contextual Info: 1150MP 150 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for |
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1150MP 55FW-1 1150MP 25oC2 | |
1030 mhz
Abstract: TPR700 700 v power transistor
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25oC2 TPR700 1030 mhz TPR700 700 v power transistor | |
Contextual Info: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor |
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MDS70 1090MHz MDS70 25oC2 150oC 200osite | |
DME 40Contextual Info: DME 375 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION The DME 375 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The |
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25oC2 DME 40 |