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Semtech Corporation ECLAMP2455K.TCT FILTER RC(PI) ESD SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ECLAMP2455K.TCT	Digi-Reel	7,210		1	1 $1.09 10 $0.8 100 $0.6908 1000 $0.5454 10000 $0.5454	Buy Now
	ECLAMP2455K.TCT	Cut Tape	7,210		1	1 $1.09 10 $0.8 100 $0.6908 1000 $0.5454 10000 $0.5454	Buy Now
	ECLAMP2455K.TCT	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.49995	Buy Now
Newark	ECLAMP2455K.TCT	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.424	Buy Now
Rochester Electronics	ECLAMP2455K.TCT		18,000		1	1 $0.5 10 $0.5 100 $0.47 1000 $0.425 10000 $0.425	Buy Now
Richardson RFPD	ECLAMP2455K.TCT				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	ECLAMP2455K.TCT			14 Weeks, 6 Days	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Avnet Silica	ECLAMP2455K.TCT			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Symmetry Electronics	ECLAMP2455K.TCT				1	1 $0.486 10 $0.468 100 $0.4392 1000 $0.4392 10000 $0.4392	Buy Now
Songtian Electronics (STE) X2Q2155KT1B0265220125ES0 X2 305VAC 1.5UF 10% P=22.5MM W26
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	X2Q2155KT1B0265220125ES0	Bag	1,000		1	1 $3.65 10 $2.418 100 $1.7622 1000 $1.41255 10000 $1.27015	Buy Now
Songtian Electronics (STE) X2P2155KT1B0265200110ES0 X2 275VAC 1.5UF 10% P=22.5MM W26
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	X2P2155KT1B0265200110ES0	Bag	995		1	1 $2.63 10 $1.711 100 $2.63 1000 $0.96264 10000 $0.85672	Buy Now
TAIYO YUDEN MSASH45MSB7155KTNA01 CAP CER 1.5UF 100V X7R 1812
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSASH45MSB7155KTNA01	Reel	500		500	1 - 10 - 100 - 1000 $0.5122 10000 $0.44725	Buy Now
	MSASH45MSB7155KTNA01	Cut Tape	500		1	1 $1.24 10 $0.927 100 $0.6929 1000 $0.6929 10000 $0.6929	Buy Now
	MSASH45MSB7155KTNA01	Digi-Reel	500		1	1 $1.24 10 $0.927 100 $0.6929 1000 $0.6929 10000 $0.6929	Buy Now
Nichicon Corporation QXK2G155KTP CAP FILM 1.5UF 10% 400VDC RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	QXK2G155KTP	Bulk	152		1	1 $2.96 10 $1.94 100 $1.3964 1000 $1.10683 10000 $0.98893	Buy Now
Newark	QXK2G155KTP	Bulk			200	1 - 10 - 100 $1.37 1000 $1.08 10000 $0.961	Buy Now
Avnet Abacus	QXK2G155KTP			28 Weeks	600	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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55KT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
j130 fet Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	PDF	0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification
1000uf electrolytic capacitor Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	PDF	0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet
static induction transistor SIT Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	PDF	0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR
MDS350L Abstract: 1030 PULSED Text: R.3.A.992605-HERIC MDS350L 350 Watts, 45 Volts, Pulsed Avionics 1030 - 1090 MHz ADVANCED ISSUE GENERAL DESCRIPTION CASE OUTLINE 55KT Style 1 The MDS350L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The	Original	PDF	992605-HERIC MDS350L MDS350L 1030 PULSED
1458 Abstract: L-Band 1200-1400 MHz IC 1458 Text: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to	Original	PDF
TAN300 Abstract: No abstract text available Text: TAN 300 300 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN 300 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven	Original	PDF	25oC2 TAN300 TAN300
700 v power transistor Abstract: No abstract text available Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The	Original	PDF	25oC2 700 v power transistor
Untitled Abstract: No abstract text available Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven	Original	PDF	25oC2 1750akdown
J3 transistor Abstract: ADVANCED POWER TECHNOLOGY Text: 0910-300Rel 1 0910– 300 300 Watts - 50 Volts, 50µs, 2% Radar 870 - 1000 MHz Preliminary GENERAL DESCRIPTION The 0910-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at fifty microseconds pulse	Original	PDF	0910-300Rel J3 transistor ADVANCED POWER TECHNOLOGY
TCS450 Abstract: No abstract text available Text: TCS450 450 Watts, 45 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION The TCS450 s a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz, with the pulse width and duty required for TCAS applications. The device has gold	Original	PDF	TCS450 TCS450 25oC2
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
electrolytic capacitor, .1uF Abstract: silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf Text: 0150SC-1250M Rev A 0150SC-1250M 1250Watts, 125 Volts, Class AB 150 to 160 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR SIT capable of	Original	PDF	0150SC-1250M 0150SC-1250M 1250Watts, 500mA, electrolytic capacitor, .1uF silicon carbide electrolytic capacitor, 1uF Static Induction Transistor SIT Static Induction Transistor ATC capacitor 56pf
df transistor Abstract: 55KT Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven	Original	PDF	25oC2 1750ower df transistor 55KT
1030 mhz Abstract: TPR700 700 v power transistor Text: TPR 700 700 Watts, 50 Volts, Pulsed Avionics 1030 – 1090 MHz GENERAL DESCRIPTION The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input	Original	PDF	25oC2 TPR700 1030 mhz TPR700 700 v power transistor

LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
1030 Abstract: MDS170L 1030 PULSED Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The	Original	PDF	MDS170L MDS170L 25oC2 1030 1030 PULSED
220v AC voltage stabilizer schematic diagram Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585	Original	PDF	AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
MDS400 Abstract: No abstract text available Text: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold	Original	PDF	MDS400 MDS400
JTDA150A Abstract: No abstract text available Text: JTDA 150A 145 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDA-150A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input and output prematch for broadband performance. The	Original	PDF	JTDA-150A 25oC2 JTDA150A
DME 40 Abstract: No abstract text available Text: DME 500 500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The	Original	PDF	25oC2 DME 40
1718-32L Abstract: No abstract text available Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier	Original	PDF	1718-32L 1718-32L
RF 150M Abstract: 0910-150M 150M Advanced Power Technology Text: 0910-150M 0910 – 150M 150 Watts - 48 Volts, 150µs, 5% Radar 890 - 1000 MHz GENERAL DESCRIPTION The 0910-150M is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 150 µs pulse width, 5% duty factor across the band 890 to 1000 MHz. This hermetically solder-sealed	Original	PDF	0910-150M 0910-150M RF 150M 150M Advanced Power Technology
1214-110 Abstract: 1214-110M Text: 1214-110M 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed	Original	PDF	1214-110M 1214-110M 1214-110
220MF Abstract: 17JJ L-Band 1200-1400 MHz Text: •r T. A A d van ced R O W ER Te c h n o lo g y R F 1214 300 - 300 W atts - 50 Volts, 100\|is, 10% Radar 1200- 1400 M Hz G EN ERA L DESCRIPTION T he 1214-300 is an internally m atchcd, COMMON B A SE tran sisto r capable o f pro v id in g 300 W atts o f pulsed RF output pow er at one hundred	OCR Scan	PDF	220MF, 220MF 17JJ L-Band 1200-1400 MHz

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55KT Search Results

55KT Price and Stock

Semtech Corporation ECLAMP2455K.TCT

Songtian Electronics (STE) X2Q2155KT1B0265220125ES0

Songtian Electronics (STE) X2P2155KT1B0265200110ES0

TAIYO YUDEN MSASH45MSB7155KTNA01

Nichicon Corporation QXK2G155KTP

55KT Datasheets Context Search

j130 fet

1000uf electrolytic capacitor

static induction transistor SIT

MDS350L

1458

TAN300

700 v power transistor

Untitled

J3 transistor

TCS450

schematic diagram atx Power supply 500w

electrolytic capacitor, .1uF

df transistor

1030 mhz

LE79Q2281

1030

220v AC voltage stabilizer schematic diagram

MDS400

JTDA150A

DME 40

1718-32L

RF 150M

1214-110

220MF