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    TE Connectivity 2326593-8

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    Weidmüller Interface GmbH & Co. KG 2659380000

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    Burkert Fluid Control Systems 265938

    CONTROL HEAD, 8695-00-S2-FA05-E-Y-MP-00-0-0-0-0 *, 8695 SERIES
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    Woodhead Molex 130083-0265 (9383-1533)

    POW-R-MITE Ind Cable Reel; 12/3 SOW; 25 ft; 20A Connector; 9383-1533
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    26.5938 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    26.5938

    Abstract: 16503 AN609
    Contextual Info: SiA778DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA778DJ AN609, CONFIGU091 05-Feb-10 26.5938 16503 AN609 PDF

    16503

    Abstract: AN609
    Contextual Info: SiA517DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA517DJ AN609, CONFIGU091 09-Apr-09 16503 AN609 PDF

    AN609

    Contextual Info: SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA511DJ AN609 21-Jun-07 PDF

    SiA519EDJ

    Abstract: 16503 AN609
    Contextual Info: SiA519EDJ Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA519EDJ AN609, 30-Jul-09 16503 AN609 PDF

    AN609

    Contextual Info: SiA913DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA913DJ AN609 21-Jun-07 PDF

    74693

    Abstract: AN609
    Contextual Info: SiA917DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA917DJ AN609 09-May-07 74693 PDF

    26.5938

    Abstract: 16503 AN609
    Contextual Info: SiA533EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA533EDJ AN609, 29-Jan-10 26.5938 16503 AN609 PDF

    4164

    Abstract: SIA513 16503 AN609
    Contextual Info: SiA513EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA513EDJ AN609, 31-Mar-09 4164 SIA513 16503 AN609 PDF

    transistor c 6073

    Abstract: AN609
    Contextual Info: SiA914DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA914DJ AN609 03-May-07 transistor c 6073 PDF

    74692

    Abstract: AN609 SiA513DJ
    Contextual Info: SiA513DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA513DJ AN609 09-May-07 74692 PDF

    AN609

    Abstract: 20224
    Contextual Info: SiA913ADJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiA913ADJ AN609, 06-Feb-09 AN609 20224 PDF