260P Search Results

Contextual Info: Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET http://onsemi.com 600V, 3.5A, 3.25Ω, TO-220F-3FS Features • • • ON-reistance RDS on =2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive TO-220F-3FS Specifications Absolute Maximum Ratings at Ta=25°C

HEL07

Abstract: E107 SY100EL07 SY100EL07ZC SY100EL07ZCTR SY10EL07 SY10EL07ZC SY10EL07ZCTR XEL07
Contextual Info: Micrel, Inc. SY10EL07 SY100EL07 SY10EL07 2-INPUT XOR/XNOR FEATURES SY100EL07 DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107

Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.

Contextual Info: ' - Y ' ij E L 0 7 SYNERGY I NPUT X OR XrJOF-' ! Y I ill.lE t.0 7 VilC O N D U C JO R B S Ü 1 FEATURES • ■ ■ ■ ■ 260ps propagation delay High bandwidth output transitions Internal 75KÎ2 input pull-down resistors ESD protection of 2000V Available in S-pin SOIC package

ACT5260

Abstract: ACT5260PC-P10-POD R4400 R4400PC R4700 R5000 E3199
Contextual Info: A i r h i 260P c -F*10*•P G D ‘2 l-K % Aj •3iDte iJL 1 L_r [_ □ J The Aeroflex 260PC-P10-POD adapts a QED RM5260 MIPS microprocessor to an R4400PC, R4600 or R4700 processor’s 179 pin PGA footprint. This product allows the evaluation of the latest MIPS IV 5XXX series performance in existing 4XXX series hardware.

23N50

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: Typen Types 260P, 260W, 260X 260P, 260W, 260X Prazisions-Trimmpotentiometer / Cermet Precision Trimming Potentiometers / Cermet Technische Daten Specifications Nennbelastbarkeit P70 Power rating P70 0,25 W Max. zulassige Betriebsspannung Max. cont. work, voltage

TC170G35

Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate

MICREL marking

Abstract: XEL07
Contextual Info: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107

E107

Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR EL07
Contextual Info: 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With

Dearborn 260P

Abstract: Dearborn Wire catalog
Contextual Info: DEARBORN METAL CASE METALIZED FILM CAPACITORS Type 260P Hermetically-Sealed M etal-Case Polycarbonate Film Capacitors Features * * * * * High S tability Small Size Low Power Dissipation Low D ielectric Absorption W ire leads or tab term inals 9922 Electrical Specifications

018U

Abstract: SY58016L SY58017U SY58018U SY58018UMI SY58018UMITR SY58019U SY58025U
Contextual Info: 5Gbps DIFFERENTIAL LVPECL 2:1 MUX WITH INTERNAL TERMINATION Micrel Precision Edge SY58018U Precision Edge™ SY58018U FEATURES • Guaranteed AC performance over temperature and voltage: • > 5Gbps data throughput • > 4GHz fMAX clock • < 260ps propagation delay

TC170G35

Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate

Contextual Info: «0» SYNERGY PRELIMINARY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay The SY10EL/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With

E107

Abstract: SY100EL07 SY100EL07ZC SY10EL07 SY10EL07ZC SY10EL07ZCTR
Contextual Info: SY10EL07 SY100EL07 FINAL 2-INPUT XOR/XNOR FEATURES DESCRIPTION • 260ps propagation delay ■ High bandwidth output transitions ■ Internal 75KΩ input pull-down resistors The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107

Contextual Info: * SYNERG Y SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75KH input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package The S Y 10 /1 00EL07 are 2-input XO R /X N O R gates.

LP 3405

Abstract: AZ100EL07 AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07

AZ100EL07

Abstract: AZ100EL07D AZ100EL07T AZ10EL07 AZ10EL07D AZ10EL07T AZTEL07 MC100EL07 MC10EL07
Contextual Info: ARIZONA MICROTEK, INC. AZ10EL07 AZ100EL07 ECL/PECL 2-Input XOR/XNOR FEATURES • • • • PACKAGE AVAILABILITY 260ps Propagation Delay High Bandwidth Output Transitions 75kΩ Internal Input Pulldown Resistors Direct Replacement for ON Semiconductor MC10EL07 & MC100EL07

LP66N

Contextual Info: electronics, inc. POLYCARBONATE FILM CAPACITORS Metalized Polycarbonate Film Capacitors Typical Characteristics ………………D3 Type 259P …………………………………………………………………D4 Type 260P …………………………………………………………………D6

Contextual Info: «ö> SYNERGY SY10EL07 2-in p u t x o r / x n o r s y io o e l o ? SEMICONDUCTOR DESCRIPTION FEATURES 260ps propagation delay High bandwidth output transitions Internal 75K£2 input pull-down resistors ESD protection of 2000V Available in 8-pin SOIC package

Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR S E M IC O N D U C T O R FEATURES DESCRIPTION • 260ps propagation delay T he S Y 1 0/1 0 0 E L 0 7 are 2 -in p u t X O R /X N O R gates. T hese devices are fu n ction a lly eq u iva le nt to the E107 d e vice s, w ith h ig h e r p e rfo rm a n ce ca p a b ilitie s .

8140 SOURIAU

Abstract: BLF6G10LS BLF6G10LS-260 1800 ldmos 800B 8140115
Contextual Info: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: *SYNERGY SY10EL07 SY100EL07 2-INPUT XOR/XNOR SEMICONDUCTOR DESCRIPTION FEATURES • 260ps propagation delay The SY10/100EL07 are 2-input XOR/XNOR gates. These devices are functionally equivalent to the E107 devices, with higher performance capabilities. With