TC160G Search Results

TC160G33

Abstract: TC160G11 TC160G22 TC160G16 TC160G70 TC140G TC160G
Contextual Info: TOSHIBA T O S H I B A A M E R I C A E L E C T R O N IC C O M P O N E N T S , I N C . Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series o p e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

Contextual Info: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family

TC160G11

Abstract: TOSHIBA TC160G TC160G22 TC160G33 tc160g16 toshiba tc110g TC160G TC163G TC140G TC110G
Contextual Info: TOSHIBA . TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. Preliminary TC160G and TC163G CMOS 0.8 micron Gate Arrays for Low Voltage Operation 3V/3.3V Description The T C 160G and T C 163G 0.8 m icro n ga te arra y series op e ra te at 3 V ± 0 .3 V or 3 .3 V ± 0 .3 V low vo lta g e . T hey have

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

Contextual Info: TOSHIBA Preliminary TOSHIBA A M E R IC A ELEC T R O N IC C O M P O N E N T S , INC. TCI6OGCMOS Gate Array J MAY 8 0.8 micron »S T Description Features T he T C 16 0G series of d o u b le -la ye r* m etal, 0.8 m icron gate arra ys has a 0.3ns gate speed and up to 120K* useable

TOSHIBA TC160G

Abstract: Toshiba NAND 67 Bga 568ps tc160g TC190G04 tc170g TC190G TC190G02 TC190G10 C2878
Contextual Info: TOSHIBA System ASIC TC190 Series CMOS ASICs 0.6µ 3.0/3.3V ASIC Family The 0.6µm, 5V TC190 ASIC series provides higher system performance and device integration with lower power than previous generation 5V families. Highly accurate delay models, area efficient memory cells and a very fine pitch TAB bonding capability

TC180G21

Abstract: single port ram TC180 TC180G TC160G AM 770 DENSITY TRANSMITTER Toshiba NAND 67 Bga tc8565 toshiba graphics tc183G
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3,3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

TC180G21

Abstract: TC180G TC160G single port RAM TC180 0724 XBRL16 toshiba ASIC
Contextual Info: TOSHIBA TC180 Series CMOS ASIC Family 3.0V/3.3V, 0.5nm1 The TC180 series increases system performance and device integration while reducing power. Benefits • True 3.0/3.3V 0.5 micron CMOS process with fast 230ps gate delays • Reduced power consumption makes lower cost plastic packag­

TC170G35

Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate

TOSHIBA GATE ARRAY

Abstract: TC183e Rambus ASIC Cell tc183
Contextual Info: TOSHIBA TC183G/E CMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3.3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the pow er savings of a 3V core

TC170G35

Contextual Info: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate

MIPS R3000A

Abstract: TOSHIBA TC160G verilog code 16 bit CISC CPU TC160G TC180G TMPR3903AF verilog code for cisc processor TC190G microcontroller tlcs R3900 interface Toshiba R3900
Contextual Info: 4594C-9904 Published in April, 1999 RISC/CISC ASIC PRODUCT GUIDE Specialized microcontrollers are increasingly used to control devices of all kinds such as automobiles, home and office appliances, handheld equipment, etc. With this trend getting into high gear, application software is

TOSHIBA TC160G

Abstract: TC160G CH7E47 0.4mm pitch flip chip 256 pin toshiba graphics toshiba LGA Nand TC170C1 tc170c
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7nm, 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CM O S process with fast 250ps gate

TC160G33

Abstract: TOSHIBA TC160G TC140G TC160G41 TC160G70 toshiba tc110g aa84 TC160G54 TC160G 8 BIT ALU design by cmos
Contextual Info: TOSHIBA Prelim inary TOSHIBA AMERICA ELECTRONIC COMPONENTS, I IMC. TC I6OGCMOS Gate ArrayJ MAY 8 0.8 micron »ST Description Features T he T C 16 0G series of d o ub le-laye r* m etal, 0.8 m icron gate a rra ys has a 0.3ns gate speed and up to 120K * useable