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    265N10LS Search Results

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    265N10LS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC265N10LSFGATMA1

    MOSFET N-CH 100V 6.5A/40A TDSON
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    DigiKey BSC265N10LSFGATMA1 Cut Tape 17,011 1
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    BSC265N10LSFGATMA1 Digi-Reel 17,011 1
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    BSC265N10LSFGATMA1 Reel 5,000 5,000
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    Avnet Americas BSC265N10LSFGATMA1 Reel 40,000 16 Weeks 5,000
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    BSC265N10LSFGATMA1 Ammo Pack 16 Weeks, 4 Days 1
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    Mouser Electronics BSC265N10LSFGATMA1 7,437
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    Newark BSC265N10LSFGATMA1 Cut Tape 2,185 1
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    BSC265N10LSFGATMA1 Reel 5,000
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    TME BSC265N10LSFGATMA1 1
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    Rutronik BSC265N10LSFGATMA1 Reel 5,000 5,000
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    Chip One Stop BSC265N10LSFGATMA1 Cut Tape 29,595 0 Weeks, 1 Days 5
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    EBV Elektronik BSC265N10LSFGATMA1 25,000 17 Weeks 5,000
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    New Advantage Corporation BSC265N10LSFGATMA1 20,000 1
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    Vyrian BSC265N10LSFGATMA1 16,244
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    Win Source Electronics BSC265N10LSFGATMA1 36,460
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    Infineon Technologies AG BSC265N10LSF G

    MOSFETs N-Ch 100V 40A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC265N10LSF G 2,191
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    Infineon Technologies AG BSC265N10LSFG

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    Bristol Electronics BSC265N10LSFG 17 3
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    Win Source Electronics BSC265N10LSFG 40,000
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    265N10LS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    265N10LS

    Contextual Info: 265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Very low gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 26.5 mΩ ID 40 A • Ideal for high-frequency switching and synchronous rectification


    Original     		BSC265N10LSF 265N10LS 265N10LS PDF

    265N10LS

    Abstract: BSC265N10LSF BSC265N10LSF G JESD22
    Contextual Info: 265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Very low gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 26.5 mΩ ID 40 A • Ideal for high-frequency switching and synchronous rectification


    Original     		BSC265N10LSF 265N10LS 265N10LS BSC265N10LSF G JESD22 PDF

    265N10LS

    Abstract: BSC265N10LSF G BSC265N10LSF IEC61249-2-21 JESD22 BSC26
    Contextual Info: 265N10LSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 26.5 mΩ • Very low gate charge x R DS(on) product (FOM) ID 40 A • Ideal for high-frequency switching and synchronous rectification


    Original     		BSC265N10LSF IEC61249-2-21 265N10LS 265N10LS BSC265N10LSF G IEC61249-2-21 JESD22 BSC26 PDF