microwave MARCONI
Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm
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P35-5123-000-200
26GHz
23dBm
24GHz
P35-5123-000-200
20-26GHz
20-26GHz.
463/SM/02579/000
microwave MARCONI
H40P
NN12
MARCONI power
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet SP4T Terminated Ramses SMA 26GHz Normaly open 12Vdc TTL Drive Solder pins PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02420 SERIE : SPnT RF CHARACTERISTICS Number of ways : 4 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms Frequency GHz
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26GHz
12Vdc
R574F02420
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sg sf sm
Abstract: No abstract text available
Text: Bolt-in Style EMI Filter AVX bolt-in style Pi filters, utilize discoidal capacitor technology to provide effective attenuation in the RF to microwave frequency spectrum from 10MHz to 26GHz. Some versions offer large hex sizes which mean much higher capacitance levels are available and that a 125 VAC/400Hz rating can
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10MHz
26GHz.
VAC/400Hz
MIL-28861
50VDC
100VDC
200VDC/115VAC
400VDC/230VAC
500VDC
sg sf sm
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Untitled
Abstract: No abstract text available
Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
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Untitled
Abstract: No abstract text available
Text: EMR101_C DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C
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EMR101
26GHz
DC-26GHz
26GHz)
100microns
100microns
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MA4SW510
Abstract: AN8020
Text: MA4SW510 HMIC Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 1dB Insertion Loss , 30dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer
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MA4SW510
50MHz
26GHz
20GHz
MA4SW510
AN8020
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MIL-STD-1686C
Abstract: 24L-QFN CHS2411-QDG AN0017 s2411 SP4T package 1686C
Text: CHS2411-QDG RoHS COMPLIANT 23-26GHz Reflective SP4T Switch GaAs Monolithic Microwave IC in QFN package Description The CHS2411-QDG is a monolithic reflective SP4T switch in K-Band. Positive supply voltage only is required. The circuit is manufactured with a standard
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CHS2411-QDG
23-26GHz
CHS2411-QDG
24L-QFN
DSCHS2411-QDG8249
MIL-STD-1686C
AN0017
s2411
SP4T package
1686C
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MASW-005100-1194
Abstract: No abstract text available
Text: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-005100-1194
50MHz
26GHz
20GHz
33dBm
MASW-005100-1194
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CHA5093TCF/24
Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Text: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,
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CHA5093TCF
24-26GHz
24-26GHz
29dBm
DSCHA50932035
04-Feb
CHA5093TCF/24
RO4003
CHA5093TCF
AN0005
Rogers RO4003 substrate
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Abstract: No abstract text available
Text: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF
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CHA5092
22-26GHz
CHA5092
22-26GHz
25dBm
400mA
DSCHA50928155
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AN0005
Abstract: CHA5093 CHA5093TCF
Text: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,
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CHA5093TCF
22-26GHz
22-26GHz
28dBm
DSCHA5093TCF1257
14-Sept-01-
AN0005
CHA5093
CHA5093TCF
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Untitled
Abstract: No abstract text available
Text: Frequency Doublers F90V 9 to 13GHz Specifications RF Frequency LO Frequency LO Power 9 to 13GHz 18 to 26GHz 16 dBm min 19 dBm typ Transfer Characteristics Conversion Loss LO to RF Isolation Available Package Styles Available Package Styles Surface Mount Available
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13GHz
26GHz
MXT301,
SMXT301
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ultrasonic amplifier circuit diagram
Abstract: LMA208G
Text: 2-26GHz PHEMT Amplifier Filtronic LMA208G Solid State Features • • • • • • • • 10dB Typical Gain 19dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”
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2-26GHz
LMA208G
19dBm
986mmX1
082mm
LMA208G
26GHz.
19dBm.
ultrasonic amplifier circuit diagram
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TriQuint
Abstract: 8504
Text: Advance Product Information 26-29 GHz Intermediate Power Amplifier Key Features and Performance • • • • • TGA9058A-EPU Primary Applications 0.25um pHEMT Technology 26GHz - 29 GHz Frequency Range Nominal Pout 23dBm @ 2dB GC Nominal SS Gain 25dB 5 V Bias
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TGA9058A-EPU
26GHz
23dBm
TGA9058A-EPU
TriQuint
8504
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SP5T
Abstract: C-150 MASW-005100-1194 Microwave PIN diode j6 diode
Text: Monolithic PIN SP5T Diode Switch MASW-005100-1194 Rev 1 FEATURES • • • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt
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MASW-005100-1194
50MHz
26GHz
20GHz
MASW-005100-1194
MASW-005100-11940W
SP5T
C-150
Microwave PIN diode
j6 diode
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attenuator 30db data sheet
Abstract: No abstract text available
Text: EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C
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EMR101
26GHz
DC-26GHz
26GHz)
100microns
attenuator 30db data sheet
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Untitled
Abstract: No abstract text available
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating
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MA4SW410
50MHz
26GHz
20GHz
MA4SW410
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet SP6T Terminated Ramses SMA 26GHz Normaly open 12Vdc Positive common D-Sub connector PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02615 SERIE : SPnT RF CHARACTERISTICS Number of ways : 6 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms
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26GHz
12Vdc
R574F02615
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transistor A1267
Abstract: a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet
Text: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=26GHz typ VCE=3V . Low operating voltage.
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EC4H09C
ENA1267
26GHz
S21e2
A1267-3/3
transistor A1267
a1267
A1267 transistor
ENA1267
a1267* transistor
A1267 data sheet
A-1267
a1267* transistor datasheet
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A1267
Abstract: A-1267 EC4H09C ECSP1008-4 S21E2
Text: EC4H09C 注文コード No. N A 1 2 6 7 三洋半導体データシート N EC4H09C NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ X バンド低雑音増幅 , 発振用 特長 ・しゃ断周波数が高い：fT=26GHz typ VCE=3V 。
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EC4H09C
26GHz
S21e2
IT13892
IT13891
IT13900
A1267
A-1267
EC4H09C
ECSP1008-4
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LMA208C
Abstract: No abstract text available
Text: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”
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LMA208C
18dBm
2-26GHz
986mmX1
082mm
LMA208C
26GHz.
19dBm.
t80/20
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MASW-004100-11930G
Abstract: MASW-004100-11930W
Text: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling
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MASW-004100-1193
50MHz
26GHz
20GHz
33dBm
MASW-004100-1193
MASW-004100-11930G
MASW-004100-11930W
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Untitled
Abstract: No abstract text available
Text: Advanced Control Components designs custom switch matrices for the most demanding applications with frequency ranges up to 26GHz. Listed below are a number of examples. Detailed specifications are available at our website www.advanced-control.com, by request from the factory or your local sales representative. Contact the factory for
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26GHz.
ACMX-A415
X-A401
ACMX-A416
ACMX-A407
ACMX-A408
ACMX-A417
ACMX-A418
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sealectro
Abstract: 50-607-3188-31 50-607-3141-31 50-651-0000-31
Text: RF Connectors SMA Series SMA Subminiature RF Connectors SMA connectors are the de-facto standard mediumpower coaxial cable connectors for military and microwave applications. They transmit radio fre quencies and mirowaves up to 18GHz with low VSWR, and are usable up to 26GHz. All meet the
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18GHz
26GHz.
MIL-C-39012,
sealectro
50-607-3188-31
50-607-3141-31
50-651-0000-31
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