19DBM Search Results

Contextual Info: HE382B-2/HEM382B-2 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 17 13 Features Frequency Range: 20～1000MHz l P-1:19dBm(typ) l Low Noise: 1.4dB(Typ) l Standard Hermetic Package l Operating Temperature Range: -55℃～+85℃

Contextual Info: Surface Mount Frequency Mixer Level 19 LO Power +19dBm 820 to 870 MHz Maximum Ratings Operating Temperature Storage Temperature Features • • • • -45°C to 85°C -55°C to 100°C LO Power +22 dBm RF Power +24 dBm Pin Connections LO 10 RF 2 IF •

Contextual Info: RFMA0912-1W-Q7 9.50 – 11.70 GHz Packaged Power Amplifier DATE: 06/06/2007 FEATURES • • • • • 9.50 – 11.70GHz Operating Frequency Range 30dBm Output Power @1dB Compression 30dB Typical Power Gain @1dB Compression -40dBc OIMD3 @Pout = 19dBm/tone

Contextual Info: Frequency Mixer LAVI-9VH+ Typical Performance Curves Conversion Loss @ IF=170MHz Conversion Loss dB 12.0 11.4 LO = +16dBm 10.8 LO = +19dBm LO = +22dBm 10.2 9.6 9.0 8.4 7.8 7.2 6.6 6.0 150 300 450 600 750 900 1050 1200 1350 1500 RF Frequency (MHz) Conversion Loss vs. IF @ RF=845MHz

RFMA12

Contextual Info: RFMA1214-1W-Q7 12.50 – 14.50 GHz High-Gain Surface Mounted PA FEATURES • • • • • 12.50 – 14.50GHz Operating Frequency Range 29dBm Output Power @1dB Compression 30dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout = 19dBm/tone 7X7mm QFN Package

Contextual Info: MMA002AA 5-20GHz, 20dBm P3dB, 18dB Gain Wideband Amplifier Features • 18dB gain with positive gain slope at 5V • 19dB gain with positive gain slope at 3.3V • 19dBm P1dB with 26dBm OIP3 at 5V • ±1dB power flatness • Input and Output matched to 50Ω

FRM5J141GW

Abstract: ingaasp PRBS231-1 O41 DIODE
Contextual Info: InGaAs-PIN/Preamp Receiver FRM5J141GW FEATURES • Small Form Factor Package GW : 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s • High Sensitivity: -19dBm (typ.) • Electrical Differential Output • Wide Bandwidth: 11GHz (typ.)

BF295

Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

EMP209-P1

Contextual Info: EMP209-P1 17.0 – 20.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES • • • • 17.0 – 20.0 GHz Operating Frequency Range 29.0dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19dBm APPLICATIONS

35 micro-X Package MARKING CODE Q

Abstract: BFY450 P microwave transistor siemens transistor "micro-x" "marking" 3 BFY450 RF TRANSISTOR NPN MICRO-X Siemens Microwave micro-X Package MARKING CODE 3
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • • 4 3 1 2 For Medium Power Amplifiers Compression Point P -1dB =19dBm 1.8 GHz Max. Available Gain G ma = 16dB at 1.8 GHz • Hermetically sealed microwave package •

transistor 2.4GHz amplifier schematic

Abstract: cap 0201 land pattern RF5373 JESD22-115-A 0201 capacitor footprint JESD22-115A
Contextual Info: RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER „ „ „ 8 7 RF IN 1 6 N/C Very Low Current see table for all modes Bias >5dBm 11g POUT @<1% and 10dBm 11g POUT @<4% DET N/C 2 5 RF OUT POUT =19dBm Meeting Class 1 BT Gain: 28dB Typ 11b/g/BT

transistor 2.4GHz amplifier schematic

Abstract: transistor 2.4GHz amplifier schematic wifi RF5373 JESD22-115A RF5373PCK-410 High linear output power for IEEE802.11b, class g power amplifier schematic
Contextual Info: RF5373 1.8V TO 3.6V IEEE802.11b/g/n AND BLUETOOTH DRIVER/AMPLIFIER    8 7 RF IN 1 6 N/C Very Low Current see table for all modes Bias >5dBm 11g POUT @<1% and 10dBm 11g POUT @<4% DET N/C 2 5 RF OUT POUT =19dBm Meeting Class 1 BT Gain: 28dB Typ 11b/g/BT

Contextual Info: RFFM8204 2.4GHz TO 2.5GHz 802.11b/g/n WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm ANT NC C_RX C_BT 16 15 14 13 12 NC PDET 1 Features      POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Input and Output Matched to

START450

Contextual Info: START450 NPN Silicon RF Transistor TARGET DATA • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • MAXIMUM STABLE GAIN Gms=14dB @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION The START450 is a member of the START family that

RFFM8202

Abstract: QFN-16 2.5mm x 2.5mm DS1203 Tablets DIAGRAM WiFi block diagram
Contextual Info: RFFM8202 Proposed 2.4GHz TO 2.5GHz WiFi FRONT END MODULE Package Style: QFN, 16-pin, 2.5mmx2.5mmx0.45mm         POUT = 19dBm 11g OFDM 2.5% EVM POUT = 21dBm Meeting 11b Spec Mask Small Size High Performance FEM Excellent Linearity Input and Output Matched to

C785 transistor

Abstract: transistor C740 BF 245 B simulation model BF 245 A spice transistor c785
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

d marking Micro-X

Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz

EMP209

Abstract: EMP209-P1 excelics
Contextual Info: EMP209-P1 17 – 20 GHz Power Amplifier MMIC UPDATED: 05/07/2008 FEATURES • • • • 17.0 – 20.0 GHz Operating Frequency Range 28.5dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19dBm Excelics EMP209

Contextual Info: RFMA1720-1W-Q7 17.7 – 19.7 GHz High-Gain Surface Mounted PA FEATURES • • • • • 17.7 – 19.7GHz Operating Frequency Range 28.0dBm Output Power @1dB Compression 29.0dB Typical Power Gain @1dB Compression -41dBc OIMD3 @Pout = 19dBm/tone 7X7mm QFN Package

Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For Medium Power Amplifiers  Hermetically sealed microwave package  Transition Frequency fT = 20 GHz  3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz

BF 295

Abstract: transistor c785 C785 transistor transistor 139 BF NE 545 500MHz-5GHz ic 747 BF 245 B simulation model sot343 699 START450
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

Contextual Info: InGaAs-PIN/Preamp Receiver FRM5J141GW FEATURES • Small Form Factor Package GW : 9 pins coplanar • Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s • High Sensitivity: -19dBm (typ.) • Electrical Differential Output • Wide Bandwidth: 11GHz (typ.)

IF Amplifiers

Abstract: AD8014 AD8350-20 250M AD6630 AD8350
Contextual Info: 30 270 MHz 0.1 dB Flat 400 +22dBm @10MHz Operating Output Range 3rd order Intercept MHz 70>250 +19dBm @250MHz 700 1:36 PM Op-Amp AD8014 12/28/99 dB 24 GAIN AD6630 MODEL NUMBER 20 AD8350 900 MHz dB 15 Operating Range GAIN AD8350 MODEL NUMBER IF Amplifiers 4600

LX5512E

Abstract: LX5512E-LQ LX5512E-LQT
Contextual Info: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin