26GHZ Search Results

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

Contextual Info: Advanced Control Components designs custom switch matrices for the most demanding applications with frequency ranges up to 26GHz. Listed below are a number of examples. Detailed specifications are available at our website www.advanced-control.com, by request from the factory or your local sales representative. Contact the factory for

Contextual Info: Technical Data Sheet SP4T Terminated Ramses SMA 26GHz Normaly open 12Vdc TTL Drive Solder pins PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02420 SERIE : SPnT RF CHARACTERISTICS Number of ways : 4 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms Frequency GHz

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Contextual Info: Bolt-in Style EMI Filter AVX bolt-in style Pi filters, utilize discoidal capacitor technology to provide effective attenuation in the RF to microwave frequency spectrum from 10MHz to 26GHz. Some versions offer large hex sizes which mean much higher capacitance levels are available and that a 125 VAC/400Hz rating can

Contextual Info: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V4 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling

Contextual Info: EMR101_C DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C

MA4SW510

Abstract: AN8020
Contextual Info: MA4SW510 HMIC Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 1dB Insertion Loss , 30dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer

MIL-STD-1686C

Abstract: 24L-QFN CHS2411-QDG AN0017 s2411 SP4T package 1686C
Contextual Info: CHS2411-QDG RoHS COMPLIANT 23-26GHz Reflective SP4T Switch GaAs Monolithic Microwave IC in QFN package Description The CHS2411-QDG is a monolithic reflective SP4T switch in K-Band. Positive supply voltage only is required. The circuit is manufactured with a standard

MASW-005100-1194

Contextual Info: MASW-005100-1194 HMIC SP5T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 38dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling

CHA5093TCF/24

Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Contextual Info: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

Contextual Info: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

AN0005

Abstract: CHA5093 CHA5093TCF
Contextual Info: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

Contextual Info: Frequency Doublers F90V 9 to 13GHz Specifications RF Frequency LO Frequency LO Power 9 to 13GHz 18 to 26GHz 16 dBm min 19 dBm typ Transfer Characteristics Conversion Loss LO to RF Isolation Available Package Styles Available Package Styles Surface Mount Available

ultrasonic amplifier circuit diagram

Abstract: LMA208G
Contextual Info: 2-26GHz PHEMT Amplifier Filtronic LMA208G Solid State Features • • • • • • • • 10dB Typical Gain 19dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”

bookham 346

Abstract: H40P NN12 P35-5123-000-200
Contextual Info: Data sheet HEMT MMIC Driver Amplifier, 20 - 26GHz Features • 23dBm Output Power @ 24GHz • 12dB Gain from 20 to 26GHz The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. With 0.3mm bondwires at the input and output, over 12dB gain from 20-26GHz is

SP5T

Abstract: C-150 MASW-005100-1194 Microwave PIN diode j6 diode
Contextual Info: Monolithic PIN SP5T Diode Switch MASW-005100-1194 Rev 1 FEATURES • • • • • • Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 dB Insertion Loss 30 dB Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The MASW-005100-1194 is a SP5T Series-Shunt

attenuator 30db data sheet

Contextual Info: EMR101_A DC – 26GHz VOLTAGE VARIABLE ATTENUATOR MMIC FEATURES • • • • Broadband Performance: DC-26GHz Wide Attenuation Range: 25dB Low Insertion Loss: 2.5dB Good Return Loss: 10dB APPLICATIONS • Point-to-point and point-to-multipoint radio ELECTRICAL CHARACTERISTICS Ta = 25 °C

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating

Contextual Info: Technical Data Sheet SP6T Terminated Ramses SMA 26GHz Normaly open 12Vdc Positive common D-Sub connector PAGE 1/2 ISSUE 16.06.13 PART NUMBER : R574F02615 SERIE : SPnT RF CHARACTERISTICS Number of ways : 6 Frequency range : 0 - 26.5 GHz Impedance : 50 Ohms

transistor A1267

Abstract: a1267 A1267 transistor ENA1267 a1267* transistor A1267 data sheet A-1267 a1267* transistor datasheet
Contextual Info: EC4H09C Ordering number : ENA1267 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC4H09C UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • High cut-off frequency : fT=26GHz typ VCE=3V . Low operating voltage.

A1267

Abstract: A-1267 EC4H09C ECSP1008-4 S21E2
Contextual Info: EC4H09C 注文コード No. N A 1 2 6 7 三洋半導体データシート N EC4H09C NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ X バンド低雑音増幅 , 発振用 特長 ・しゃ断周波数が高い：fT=26GHz typ VCE=3V 。

sealectro

Abstract: 50-607-3188-31 50-607-3141-31 50-651-0000-31
Contextual Info: RF Connectors SMA Series SMA Subminiature RF Connectors SMA connectors are the de-facto standard mediumpower coaxial cable connectors for military and microwave applications. They transmit radio fre­ quencies and mirowaves up to 18GHz with low VSWR, and are usable up to 26GHz. All meet the

LMA208C

Contextual Info: 2-26 GHz PHEMT Amplifier Filtronic LMA208C Solid State Features • • • • • • • • 9dB Typical Gain 18dBm 1-dB Gain Compression Power 15dB Input/Output Return Loss Typical 2-26GHz Frequency Bandwidth DC Decoupled RF Input and Output Chip Size : 1.986mmX1.082mm .078”X.043”

MASW-004100-11930G

Abstract: MASW-004100-11930W
Contextual Info: MASW-004100-1193 HMIC SP4T Silicon PIN Diode Switch V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Reliable, Fully Monolithic, Glass Encapsulated Construction +33dBm Power Handling