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Kyocera AVX Components BL226F0105J-- FILM RAD 1F 5 160V 225mm MKP Bulk (Alt: BL226F0105J--)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	BL226F0105J--			143 Weeks	1,600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components BL226F0105K-- POLYPRO FILM CAP RADIAL (Alt: BL226F0105K--)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	BL226F0105K--			143 Weeks	200	1 - 10 - 100 - 1000 - 10000 -	Buy Now

26F010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for	OCR Scan	A28F010 1024K 32-LE AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316,	PDF
8155 intel microcontroller architecture Contextual Info: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Automotive Temperature Range: —40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program	OCR Scan	A28F010 1024K 120ns AP28F010-120 AN28F010-120 AP28F010-150 AN28F010-150 ER-20, ER-24, RR-60, 8155 intel microcontroller architecture	PDF
PLD intel Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD Contextual Info: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program	OCR Scan	Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD	PDF
TN28F010 Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010	PDF
28F010-120 Abstract: 28f010 Contextual Info: in te l 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Qulck-Pulse Programming Algorithm — 10 jus Typical Byte-Program	OCR Scan	28F010 1024K N28F010-120 TN28F010-120 N28F010-150 F28F010-120 F28F010-150 TE28F010-120 TF28F010-120 ER-20, 28F010-120	PDF
Contextual Info: in tj, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8 KB Boot Block w/Lock Out — Two 4 KB Parameter Blocks — One 112 KB Main Block ■ High-Performance Read — 120 ns Maximum Access Time — 5.0V ±10% Vcc	OCR Scan	28F001BX-T/28F001BX-B 32-Lead 28F001BX	PDF
28f010-200 Abstract: P28F010-200 28f010 26F010 290207 Contextual Info: in t e i 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming?* Algorithm — 10 /us Typical Byte-Program — 2 Second Chip-Program ■ 10,000 Erase/Program Cycles Minimum ■	OCR Scan	28F010 1024K 32-Pin 32-Lead 28F010 32-P1N P28F010-120 P28F010-150 P28F010-200 28f010-200 26F010 290207	PDF