270OC Search Results

RM96P

Abstract: RM96P relpol RM96P-12v RM96-P-12V RM96-1011-35-1005 RM96-1011-35-1024 RM96-P-9V RM96-Z-12V RM96P 24V RM96-1011-35-1048
Contextual Info: MHTEPTEKC www.i-t.su ¡nfo@i-t.su electronics Ten: 495 739-09-95, 644-41-29 P e n e cepM M R M 9 6 Pa6oH aa TeM nepaiypa T eM n ep aiyp a naMKM 8 A/250 VAC/24 VAC 400 VAC/250 VDC 4000 B 10 MC 5 MC o t - 40°C flo +80oC MaKC. 270oC/MaKC. 5ceKyHfl npOM3BOflMTeJ1b

106psi

Contextual Info: Vecta E130 - Mechanical @ 73o F 23o C - Tensile Strength at Break:18 (124) x 103 psi (MPa) - Tensile Modulus: 2.0 (14) x 106psi (Gpa) - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 518o F (270oC) - Melting Point: 670oF (355oC) - Electrical

jesd22-a108B

Abstract: JESD22-A108-B JESD22-A104B S510067 JESD22-A114 JESD78
Contextual Info: Reliability Qualification Report S510065-55Z - RoHS Compliant Products Qualified by Similarity S510067-55Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall

JESD22-B102-C

Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
Contextual Info: Reliability Report SGA/SGC Series in SOT-86 Package SnPb Plated SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 SGA-4286 SGA-4386 SGA-4486 SGA-4586 SGA-5286 SGA-5386 SGA-5486 SGA-5586 SGA-6286 SGA-6386 SGA-6486 Matte Sn, RoHS Compliant

S510068-28Z

Abstract: s5100 JESD22-A104B JESD22-A108B JESD22-A114 JESD78
Contextual Info: Reliability Qualification Report S510068-28Z - RoHS Compliant Products Qualified by Similarity S510069-28Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall

STQ2016Z

Abstract: JESD22-A104B SRF-2016Z JESD22-A110 SRF-1016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
Contextual Info: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

JESD22-A102C

Abstract: JESD22-A104B SGB-6433Z SGB-4533Z SGB-6533 SGB-2233Z JESD22-A-104B JESD22-A113C SGB-6433 SGB-6533Z
Contextual Info: Reliability Qualification Report SGB-6533 - SnPb Plated SGB-6533Z - Matte Sn, RoHS Compliant Products Qualified by Similarity SGB-2233 SGB-2433 SGB-2233Z SGB2433Z SGB-4333 SGB-4533 SGB-6433 SGB-4333Z SGB-4533Z SGB-6433Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for

SBB-2089Z

Abstract: sbb2089z SBB5089 SBB-4089 darlington pair transistor SBB-2089 SBB-3089 SBB2089 SBB-1089 SBB5089Z
Contextual Info: Reliability Qualification Report SBB-2089Z Products Qualified by Similarity SBB-1089 SBB-1089Z SBB-3089Z SBB-4089Z SBB-5089Z CGB-1089Z SBB-2089 SBB-4089 SBB-5089 Initial Qualification Feb 2005 Additional HAST June 2005 The information provided herein is believed to be reliable at press time. RFMD assumes no responsibility for inaccuracies or omissions.

SPF-5043Z

Abstract: spf5043z spf-5043 5043Z SPF 5043Z JESD22-A104B JESD22-A108B JESD22-A114 JESD22-A-108-B SOT343 lna
Contextual Info: Reliability Qualification Report SPF-5043Z - Matte Sn, RoHS Compliant The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall

SPF-5122Z

Abstract: spf-5122 SPF5122z precondition DIP JEDEC spf 5122 JESD22-A104B JESD22-A108B JESD22-A114 ESD test plan JESD22-B102C
Contextual Info: Reliability Qualification Report SPF-5122Z - Matte Sn, RoHS Compliant The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall

SGA6489Z

Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
Contextual Info: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z

Contextual Info: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

TPS61150A

Abstract: TPS61150ADRCR TPS61150ADRCT VLCF4018T-100MR74-2 VLF3012AT-100MR49
Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

FDN361BN

Contextual Info: FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain

FDN302P

Abstract: marking code 10 sot23 rca MIL ID SSOT-3
Contextual Info: FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

FDN360P

Contextual Info: FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

Contextual Info: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V

NDS351N

Contextual Info: March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.1A, 30V. RDS ON = 0.25Ω @ VGS = 4.5V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

5962-9084703MNA

Abstract: JEDEC MO-110 ras 0910 5v RAS 0610
Contextual Info: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and

Contextual Info: March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

NDS332P

Contextual Info: June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS351AN

Contextual Info: April 1997 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high