106psi
Abstract: No abstract text available
Text: Vecta E130 - Mechanical @ 73o F 23o C - Tensile Strength at Break:18 (124) x 103 psi (MPa) - Tensile Modulus: 2.0 (14) x 106psi (Gpa) - Thermal - Heat Deflection Temperature: -264 psi, 1.82 N/mm2 : 518o F (270oC) - Melting Point: 670oF (355oC) - Electrical
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106psi
270oC)
670oF
355oC)
47kV/mm)
UL94VO
106psi
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jesd22-a108B
Abstract: JESD22-A108-B JESD22-A104B S510067 JESD22-A114 JESD78
Text: Reliability Qualification Report S510065-55Z - RoHS Compliant Products Qualified by Similarity S510067-55Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
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S510065-55Z
S510067-55Z
RQR-104850
S510065-55Z
JESD22-A108B
JESD22-A102C
JESD22-A104B
JESD22-A103B
JESD22-B102C
jesd22-a108B
JESD22-A108-B
JESD22-A104B
S510067
JESD22-A114
JESD78
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JESD22-B102-C
Abstract: SOT-86 sot86 transistor c 5586 q404 transistor SGA-6486Z SGA-6286 JESD22-B102C q402 transistor transistor 5586
Text: Reliability Report SGA/SGC Series in SOT-86 Package SnPb Plated SGA-2186 SGA-2286 SGA-2386 SGA-2486 SGA-3286 SGA-3386 SGA-3486 SGA-3586 SGA-4186 SGA-4286 SGA-4386 SGA-4486 SGA-4586 SGA-5286 SGA-5386 SGA-5486 SGA-5586 SGA-6286 SGA-6386 SGA-6486 Matte Sn, RoHS Compliant
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OT-86
SGA-2186
SGA-2286
SGA-2386
SGA-2486
SGA-3286
SGA-3386
SGA-3486
SGA-3586
SGA-4186
JESD22-B102-C
SOT-86
sot86
transistor c 5586
q404 transistor
SGA-6486Z
SGA-6286
JESD22-B102C
q402 transistor
transistor 5586
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S510068-28Z
Abstract: s5100 JESD22-A104B JESD22-A108B JESD22-A114 JESD78
Text: Reliability Qualification Report S510068-28Z - RoHS Compliant Products Qualified by Similarity S510069-28Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
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S510068-28Z
S510069-28Z
RQR-105559
S510068-28Z
S510069-28Z
s5100
JESD22-A104B
JESD22-A108B
JESD22-A114
JESD78
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STQ2016Z
Abstract: JESD22-A104B SRF-2016Z JESD22-A110 SRF-1016Z SRQ-2116Z STQ-1016Z STQ-2016Z STQ-3016Z TSSOP-16
Text: Reliability Qualification Report STQ-2016Z - Matte Sn, RoHS compliant Products Qualified by Similarity STQ-1016Z SRF-1016Z SRQ-2116Z STQ-3016Z SRF-2016Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
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STQ-2016Z
STQ-1016Z
SRF-1016Z
SRQ-2116Z
STQ-3016Z
SRF-2016Z
RQR-104756
SRQ-2116Z,
STQ2016Z
JESD22-A104B
SRF-2016Z
JESD22-A110
SRQ-2116Z
TSSOP-16
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JESD22-A102C
Abstract: JESD22-A104B SGB-6433Z SGB-4533Z SGB-6533 SGB-2233Z JESD22-A-104B JESD22-A113C SGB-6433 SGB-6533Z
Text: Reliability Qualification Report SGB-6533 - SnPb Plated SGB-6533Z - Matte Sn, RoHS Compliant Products Qualified by Similarity SGB-2233 SGB-2433 SGB-2233Z SGB2433Z SGB-4333 SGB-4533 SGB-6433 SGB-4333Z SGB-4533Z SGB-6433Z The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for
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SGB-6533
SGB-6533Z
SGB-2233
SGB-2433
SGB-2233Z
SGB2433Z
SGB-4333
SGB-4533
SGB-6433
SGB-4333Z
JESD22-A102C
JESD22-A104B
SGB-6433Z
SGB-4533Z
JESD22-A-104B
JESD22-A113C
SGB-6433
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SBB-2089Z
Abstract: sbb2089z SBB5089 SBB-4089 darlington pair transistor SBB-2089 SBB-3089 SBB2089 SBB-1089 SBB5089Z
Text: Reliability Qualification Report SBB-2089Z Products Qualified by Similarity SBB-1089 SBB-1089Z SBB-3089Z SBB-4089Z SBB-5089Z CGB-1089Z SBB-2089 SBB-4089 SBB-5089 Initial Qualification Feb 2005 Additional HAST June 2005 The information provided herein is believed to be reliable at press time. RFMD assumes no responsibility for inaccuracies or omissions.
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SBB-2089Z
SBB-1089
SBB-1089Z
SBB-3089Z
SBB-4089Z
SBB-5089Z
CGB-1089Z
SBB-2089
SBB-4089
SBB-5089
SBB-2089Z
sbb2089z
SBB5089
SBB-4089
darlington pair transistor
SBB-2089
SBB-3089
SBB2089
SBB-1089
SBB5089Z
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SPF-5043Z
Abstract: spf5043z spf-5043 5043Z SPF 5043Z JESD22-A104B JESD22-A108B JESD22-A114 JESD22-A-108-B SOT343 lna
Text: Reliability Qualification Report SPF-5043Z - Matte Sn, RoHS Compliant The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
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SPF-5043Z
RQR-105880
SPF-5043Z
SPF-50
JESD22-A103B
JESD22-B102C
spf5043z
spf-5043
5043Z
SPF 5043Z
JESD22-A104B
JESD22-A108B
JESD22-A114
JESD22-A-108-B
SOT343 lna
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SPF-5122Z
Abstract: spf-5122 SPF5122z precondition DIP JEDEC spf 5122 JESD22-A104B JESD22-A108B JESD22-A114 ESD test plan JESD22-B102C
Text: Reliability Qualification Report SPF-5122Z - Matte Sn, RoHS Compliant The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall
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SPF-5122Z
RQR-105879
SPF-5122Z
SPF-51
JESD22-A103B
Sn63/Pb37
JESD22-B102C
spf-5122
SPF5122z
precondition DIP JEDEC
spf 5122
JESD22-A104B
JESD22-A108B
JESD22-A114
ESD test plan
JESD22-B102C
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SGA6489Z
Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
Text: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z
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OT-89
SGA-5289
SGA-5389
SGA-5489
SGA-5589
SGA-6289
SGA-6389
SGA-6489
SGA-6589
SGA-7489
SGA6489Z
IC 7489
JESD22-B102-C
SGA6389Z
SGA-5589Z
SGA-7489
SGA-6489
SGA-9289Z
SGA9189Z
SGC-6489
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Untitled
Abstract: No abstract text available
Text: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDN358P
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TPS61150A
Abstract: TPS61150ADRCR TPS61150ADRCT VLCF4018T-100MR74-2 VLF3012AT-100MR49
Text: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency
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TPS61150A
SLVS706
TPS61150/1
30kHz
TPS61150A
TPS61150ADRCR
TPS61150ADRCT
VLCF4018T-100MR74-2
VLF3012AT-100MR49
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FDN361BN
Abstract: No abstract text available
Text: FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDN361BN
OT-23
FDN361BN
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fdn5618p
Abstract: No abstract text available
Text: FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS ON = 0.170 Ω @ VGS = –10 V
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FDN5618P
fdn5618p
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FDN360P
Abstract: No abstract text available
Text: FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
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FDN360P
OT-23
FDN360P
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Untitled
Abstract: No abstract text available
Text: FDN371N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 2.5 A, 20 V. RDS ON = 50 mΩ @ VGS = 4.5 V
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FDN371N
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NDS351N
Abstract: No abstract text available
Text: March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 1.1A, 30V. RDS ON = 0.25Ω @ VGS = 4.5V. These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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NDS351N
NDS351N
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5962-9084703MNA
Abstract: JEDEC MO-110 ras 0910 5v RAS 0610
Text: DRAM MT4C4001J Austin Semiconductor, Inc. PIN ASSIGNMENT 1 MEG x 4 DRAM Top View Fast Page Mode DRAM 20-Pin DIP (C, CN) AVAILABLE AS MILITARY SPECIFICATIONS DQ1 DQ2 WE\ RAS\ A9 A0 A1 A2 A3 Vcc • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and
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MIL-STD-883
20-Pin
MT4C4001J
300mW
024-cycle
refresh62-9084701MNA
MT4C4001JC-8/883C
5962-9084703MNA
JEDEC MO-110
ras 0910
5v RAS 0610
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Untitled
Abstract: No abstract text available
Text: March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS355N
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Untitled
Abstract: No abstract text available
Text: April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain
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FDN359AN
OT-23
OT-23
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NDS332P
Abstract: No abstract text available
Text: June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDS332P
NDS332PRev.
NDS332P
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NDS351AN
Abstract: No abstract text available
Text: April 1997 NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS351AN
OT-23
NDS351AN
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Untitled
Abstract: No abstract text available
Text: January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high
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NDS355AN
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RM96P
Abstract: RM96P relpol RM96P-12v RM96-P-12V RM96-1011-35-1005 RM96-1011-35-1024 RM96-P-9V RM96-Z-12V RM96P 24V RM96-1011-35-1048
Text: MHTEPTEKC www.i-t.su ¡nfo@i-t.su electronics Ten: 495 739-09-95, 644-41-29 P e n e cepM M R M 9 6 Pa6oH aa TeM nepaiypa T eM n ep aiyp a naMKM 8 A/250 VAC/24 VAC 400 VAC/250 VDC 4000 B 10 MC 5 MC o t - 40°C flo +80oC MaKC. 270oC/MaKC. 5ceKyHfl npOM3BOflMTeJ1b
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OCR Scan
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K0HTaKTbi/06M0TKa
VAC/24
VAC/250
ot-40Â
RM96-P-5V
RM96-P-9V
RM96-P-12V
RM96-P-24V
RM96-P-48V
RM96-Z-12V
RM96P
RM96P relpol
RM96P-12v
RM96-1011-35-1005
RM96-1011-35-1024
RM96P 24V
RM96-1011-35-1048
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