271296 Search Results

28F008SA

Abstract: E28F008SA E0000 SmartDie TB28F008SA
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase

28F008SAT

Contextual Info: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

Intel i7 MTBF

Contextual Info: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

TB28F008SA-100

Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
Contextual Info: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip

enthalpy

Contextual Info: VORTEX FLOWMETERS MADE IN USA $ 1752 Basic Unit FV-520B-F-D, shown smaller than actual size ߜ Measures Steam, Gas, and Low Viscosity Liquids ߜ No Moving Parts and No Sensor Contact with Process Fluid ߜ Accuracy Up to 0.8% of Rate ߜ Intelligent Amplifier

Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase

Contextual Info: in t e i A O W A t M ! D M F @ I^ ß iflÄ ¥ D fiO 28F008SA-L 8-MBIT (1 MBIT x 8 FLASH FI LETM MEMORY • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc ■ Extended Cycling Capability

28F008SA

Abstract: E28F008SA-120 E0000 PA28F008SA120 intel386sl SmartDie
Contextual Info: E PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

82360SL

Abstract: 29042
Contextual Info: in t e ! 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included u High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks • Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

SmartDie

Abstract: 271296 ALi Corporation M1431
Contextual Info: in te i 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V + 0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications Included • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

E28F008SA-120

Abstract: E28F008SA 28F008SA
Contextual Info: • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip n Automated Byte Write and Block Erase — Command User Interface — Status Register

28F008SA

Contextual Info: 5 VOLT FlashFile MEMORY 28F008SA x8 • High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks ■ Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip ■ ■ Automated Byte Write and Block Erase

Contextual Info: P R S ILD Q ilD liO A H V in t e J 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles

HPM hifn

Abstract: dell 745 DELL PPC970 ppc970 ibm OPT800 795* HIFN meterflow dell 1530 hifn lzs
Contextual Info: Hifn Pattern Match 2.0 Performance Application Note Intelligent Secure Networking Hifn Confidential . AN-0130-03, 2006, Hi/fn , Inc. All rights reserved. 11/06 No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or

28F008SA-L

Abstract: 80L186EB E0000
Contextual Info: 28F008SA-L 8-MBIT 1 MBIT x 8 FLASHFILE TM MEMORY Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Low-Voltage Operation b 3 3V g 0 3V or 5 0V g 10% VCC Y Extended Cycling Capability 10 000 Block Erase Cycles 160 000 Block Erase

Contextual Info: A G M & N K D I O K H F K [M lA ‘irD M 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • ■ High-Performance Read — 200 ns Maximum Access Time a Deep Power-Down Mode High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks

Contextual Info: in te i 0 M F @ fà G $ A 7 0 M 28F008SA-L 8-MBIT (1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voitage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles

ER-27

Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase