27APR2004 Search Results

a6583

Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

t3383

Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

M41T81

Abstract: AN1012 M41T81S bmb2 smd M41T813 ABE smd
Contextual Info: M41T81 Serial access real-time clock with alarm Not For New Design Features • For new designs use M41T81S ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 8 32 KHz crystal oscillator integrating load

Contextual Info: TH I S DRAW ING I S U N P U B L I S H E D . CO P Y R I GHT2003 R E L E A S E D FOR P U B L I C A T I O N BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS LOC RESERVED. REV I S I ONS D I ST A D E S C R I P T I ON A B NEW D R A W NG GREATED ADDED DASHES: - 2 / - 3 / - 4

Contextual Info: M41T81 Serial access real-time clock with alarm Datasheet - production data Description 8 1 SO8 8-pin SOIC Features • For all new designs use M41T81S  Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2003 2 3 1 2003 LOC BY - REVISIONS DIST AI ALL RIGHTS RESERVED. 2 P LTR DESCRIPTION B2 B3 8.13 0.25 D 5 13.97 27.43 0.38 B APVD ECR-13-016227 11NOV2013 KKB R.P ECR-13-019618 17DEC2013 KKB

MS 7529

Abstract: block diagram for RF transmitter AND RECEIVER doc AN1012 M41T81 M41T81S AN-1572 bmb2 smd
Contextual Info: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,

VDR 0047

Abstract: J-STD-020B M68AW256M TFBGA48 TSOP44
Contextual Info: M68AW256M 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V

CR10

Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers

Contextual Info: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,

UM0381

Abstract: programmer st10f272 RH3 439 ST10F272 OSC32 ST10F276 CAN bit timing st10 Bootstrap ACC20 ST10 half adder
Contextual Info: UM0381 User manual ST10F272 Introduction This manual describes the functionality of the ST10F272 devices. An architectural overview describes the CPU performance, the on-chip system resources, the on-chip clock generator, the on-chip peripheral blocks and the protected bits.

P36-103-11R9

Abstract: CB605 r741 QSH-030-01-F-D-A on semiconductor r643 on semiconductor r639 smd diode OE R612 R645 RC28F128K3C115 A12B1
Contextual Info: U s er’s Ma nual, V 1.2, Ju ne 2004 TriBoard TC1130 H a r d w a r e M an u a l T C 1 1 3 0 - 3 0 0 M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2004-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

M58BW032DT

Abstract: PQFP80 M58BW032BT M58BW032DB M58BW032BB
Contextual Info: M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 32 Mbit 1Mb x32, Boot Block, Burst 3.3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O