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    M30L0R8000B0 Search Results

    M30L0R8000B0 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    M30L0R8000B0
    		STMicroelectronics 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Original PDF 546.02KB 83
    M30L0R8000B0ZAQ
    		STMicroelectronics 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Original PDF 546.02KB 83
    M30L0R8000B0ZAQE
    		STMicroelectronics 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Original PDF 546.02KB 83
    M30L0R8000B0ZAQF
    		STMicroelectronics 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Original PDF 546.02KB 83
    M30L0R8000B0ZAQT
    		STMicroelectronics 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory Original PDF 546.02KB 83

    M30L0R8000B0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    a6583

    Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
    Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		M30L0R8000T0 M30L0R8000B0 54MHz a6583 CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 PDF

    t3383

    Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		M30L0R8000T0 M30L0R8000B0 54MHz t3383 PDF

    CR10

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
    Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		M30L0R8000T0 M30L0R8000B0 54MHz CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B PDF

    PSRAM

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
    Contextual Info: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		M36L0R8060T1 M36L0R8060B1 M36L0R8060T1: 880Dh M36L0R8060B1: 880Eh 54MHz PSRAM RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA PDF

    7900f-d

    Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh 7900f-d PDF

    M30L0R8000T

    Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
    Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 M36LLR8860T1: 880Dh M36LLR8860D1: 880Eh M30L0R8000T RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1 PDF

    M69KR096A

    Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
    Contextual Info: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory


    Original     		M36L0R8060T0 M36L0R8060B0 M36L0R8060T0: 880Dh M36L0R8060B0: 880Eh 54MHz M69KR096A J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0 PDF