27C010 WSI Search Results

27C010L

Abstract: WS27C010L 27C010 wsi WS27C010L-15DMB
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 120 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — 32 Pin CERDIP Package

27C010L

Abstract: 27010 eprom 27C010L-15 27C010L-20
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 — 120 ns A ccess T im e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration

Contextual Info: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

27C010L

Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
Contextual Info: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

smd JF

Abstract: cllcc 542w
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESCSMD No. 5962-89614 • High Performance CMOS — 90 ns A ccess Tim e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-U p Im m unity to 200 mA

Contextual Info: PRELIMINARY F = A IR CH II_ D SEMICONDUCTOR TM N3 >1 O O o FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Read Only Memory. It Is organized as 512K words

Contextual Info: F = A IR C H IU D ì M I C O N D U C T O R TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized

Contextual Info: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs

27C256 General Semiconductor

Abstract: NM27C512N 27C010 27C020 27C040 27C080 27C256 C1995 NM27C512
Contextual Info: NM27C512 524 288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 0 8 micron CMOS AMGTM EPROM technology for an excellent combination of speed and economy while providing excellent reliability

FM27C040

Abstract: 27C010 FM27C040QXXX
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

Contextual Info: SEMICONDUCTOR TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C040 27C256 FM27C512 FM27C512Q
Contextual Info: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

b058

Abstract: NM27C512 National Controls ne 545 27C010 27C020 27C040 27C080 27C256
Contextual Info: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

27C080

Abstract: NM27C040 27C010 27C020
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

512K x 8 High Performance CMOS EPROM

Abstract: 27C010 27C020 27C080 NM27C040
Contextual Info: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

27C010

Abstract: 27C040 27C256 FM27C512
Contextual Info: FM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The FM27C512 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactured using Fairchild’s proprietary CMOS AMG EPROM technology for an excellent combination of speed and economy while

27C010

Abstract: 27C020 27C080 A12C NM27C040
Contextual Info: January 1994 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

D-1632

Abstract: 27C010 wsi
Contextual Info: WS27C010L LOW POWER 1 MEG 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS — * DESC SMD No. 5962-89614 je d e C Standard Pin Configuration 90 ns Access Time • • Standby Current <100 |JA — 32 Pin CERDIP Package 32 Pin Leaded Chip Carrier (CLDCC)

smd A18I

Abstract: 27C256L 613AG 27c512l WS27C010L
Contextual Info: WAFER SCALE § INTEGRATION 3=1E D m ‘î S B ' l b ^ O OOOQb47 Ô ötilAF _ WS27C010L WAFERSCALE INTEGRATION, INC. '" p . 128K X 8 C M O S EPR O M K EY FEATURES High Performance CMOS • Simplified Upgrade Path — 100 ns Access Time

27C512 National Semiconductor

Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
Contextual Info: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up