FM27C040VXXX Search Results

27C010X

Contextual Info: M IC O N D U C T D R Ju ly 1998 tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Program mable R e a d o n ly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide JEDEC EPROMs

FM27C040

Abstract: 27C010 FM27C040QXXX
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

Contextual Info: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs

27C010

Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
Contextual Info: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide

led plcc uh rt

Abstract: 27C020 27C080 FM27C040 MBH32A
Contextual Info: tm FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features T h e F M 2 7 C 0 4 0 is a high p e rfo rm a n c e , 4 ,1 9 4 ,3 0 4 -b it E le ctrica lly P ro g ra m m a b le R e a d o n ly M e m o ry . It is o rg a n iz e d a s 5 1 2 K w o rd s