27C12 Search Results

Contextual Info: & 27C128 Microchip 128K 16K X 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C128 is a CMOS 128K • • • • — 120ns access tim e available CMOS Technology for low power consumption — 20mA Active current

Contextual Info: 27C128 & Microchip _ 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns Maximum access time • CMOS Technology for low power consumption The Microchip Technology Inc 27C 128 is a CMOS 128K bit (electrically) Programmable Read Only Memory. The

MBM27C128-25

Abstract: M5M27C128K-15 M5M27C128K15 27c1028 TI 27C128 uveprom 57C128F-90 57C128F-70 AT27C128-12 i2764 27C128-15
Contextual Info: - 92 - 2 7 C 12 8 m £ £ i u o s i x 4 M » 7 A üb ns) 27C128-12 MICROCHIP —70 120 120 65 50 4. 5 - 5 . 5 20/2 0.8 2.0 6 0. 45/2.1 2.4/0.4 12 27C128-15 MICROCHIP 0—-70 150 150 70 50 4. 5— 5. 5 20/2 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 12 CO TAAC max

27C128

Abstract: 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Contextual Info: Obsolete Device 27C128 128K 16K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 21 17 22 13 16 12 15 A6 A5 A4

Contextual Info: 27C128 M ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C 2 A it; 3 A6C 4 A5 C 5 A4 C 6 A3 C 27C128 A2 C 8 A lC 9 AO C 10 • CMOS Technology for low power consumption

27C020

Abstract: 27c256 Ram pinout diagram National Controls ne 545 ve200 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: tm 27C12Ô 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read Only Memory. It is m anufactured with

27C010

Abstract: 27C020 27C040 27C080 27C128 27C256 27C512 NM27C128
Contextual Info: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C 128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

Contextual Info: O K I Semiconductor 27C121ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION The M SM 27C121ZB is a 1 Mb electrically Program mable Read-Only Mem ory organized as 131,072 words x 8 bits. The M SM 27C121ZB operates on a single 5 V pow er supply and is TTL com patible. Since the

27C101ZB

Contextual Info: Ms OTP ROMS 1 -M eg O T P R O M s Part Number Configuration Pins / Package Access Time M ax ns Voltage M SM 27C121ZB 128K x 8 32/ DIP, SO P, T S O P 70 5.0 V M SM 27C101ZB 128K x 8 3 2 / D IP , S O P ,T S O P 100 5.0 V M SM 27C131ZB 128K x 8 3 2 / DIP, SOP, T S O P

Contextual Info: M 27C128 ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available

Photocell

Abstract: 27c12 Scans-0017376 3 PIN photocell
Contextual Info: EDISWAN 27CI2 PHOTO-CELL TENTATIVE GENERAL The 27C12 is a vacuum Photo-Cell with a caesium-oxygen-silver cathode surface, having maximum sensitivity in the near infra-red region of the spectrum. It is highly sensitive to incandescent light sourccs and may be used for machine control, counting applications,

27C128 General Semiconductor

Abstract: 27c128
Contextual Info: 27C128 131,072-Bit 16K x 8 High Performance CMOS EPROM General Description The NM 27C128 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C128 is a high performance 128K UV Erasable Electri­ cally Program mable Read O nly Memory. It is m anufactured with

mbm27c128

Abstract: CERAMIC LEADLESS CHIP CARRIER LCC 32 socket 27C128-25-X BM TVS M27C128
Contextual Info: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY TS119-A886 June 1988 CMOS 131072 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C128 is a high speed 131,072 bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM .

Contextual Info: $ M ic r o c h ip 27C128 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 |iA Standby current • Factory programming available

27C128

Abstract: eprom 27C128 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Contextual Info: 27C128 128K 16K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3

27C128

Abstract: 200B 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25 8870 SPECIFICATION
Contextual Info: 27C128 128K 16K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3

27C128

Abstract: 200B 27C128-12 27C128-15 27C128-17 27C128-20 27C128-25
Contextual Info: 27C128 128K 16K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 26 27C128 9 25 22 13 21 A8 A9 A11 NC OE A10 CE O7 O6 20 23 12 19 24 11 18 10 17 A6 A5 A4 A3 A2 A1 A0 NC

Contextual Info: & 27C128 M icrochip 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance — 120ns Maximum access time CMOS Technology for low power consumption — 20mA Active current — 100|iA Standby current Factory programming available Auto-insertion-compatible plastic packages

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

Contextual Info: & 27C128 M icroch ip _ 128K 16K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology lnc27C 128 is a CMOS 128K bit ultraviolet light E rasable (electrically) Programmable — 120ns Maximum access time • CMOS Technology for low power consumption

MBM27C128-25

Abstract: MBM27C128-20 27c128 MBM27C128
Contextual Info: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY M BM 27028-17 M BM 27028-20 M BM 27028-25 February 1987 E d itio n 2 .0 CMOS 131072 B IT U V ERASABLE A N D ELEC TR IC A LLY PRO GRAM M ABLE READ O N L Y M EM O RY The Fujitsu MBM 27C128 is a high speed 131,072 b it static com plem entary

Contextual Info: $ M ic r o c h ip 27C128 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C • 1 A12C 2 A7C 3 A6C 4 A5C 5 A4 Q 6 • CMOS Technology for low power consumption - 20 mA Active current - 100 pA Standby current

OKI EM-318

Abstract: TSOP32 Package 2hh4 DE-A10
Contextual Info: O K I Semiconductor M SM 27C121ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION electrically Programmable Read-Only Memory organized as 131,072 words 27C121ZB operates on a single 5 V power supply and is TTL compatible. Since the 21ZB operates asynchronously, external clocks are not required, making the 27C121ZB

27c128

Contextual Info: 27C128 M ic r o c h ip 128K 16K x 8 CMOS EPROM FEATURES PACKAGE TYPES DIP/SOIC • High speed performance - 120 ns access time available Vpp [I • 1 A12 C 2 A7C 3 A6C 4 • CMOS Technology for low power consumption • 20 mA A ctive current A5 C A4 C